Henksmeier, T., et al. “Remote Epitaxy of InxG-XAs (0 0 1) on Graphene Covered GaAs(0 0 1) Substrates.”10.1016/j.jcrysgro.2022.126756__Journal of Crystal Growth, vol. 593, 126756, Elsevier BV, 2022, doi:10.1016/j.jcrysgro.2022.126756.

Verma, A. K., et al. “Low Areal Densities of InAs Quantum Dots on GaAs(100) Prepared by Molecular Beam Epitaxy.”10.1016/j.jcrysgro.2022.126715__Journal of Crystal Growth, 126715, Elsevier BV, 2022, doi:10.1016/j.jcrysgro.2022.126715.

Albert, M., et al. “Optical In-Situ Temperature Management for High-Quality ZnO Molecular Beam Epitaxy.”10.1016/j.jcrysgro.2020.126009__Journal of Crystal Growth, vol. 557, 126009, 2021, doi:10.1016/j.jcrysgro.2020.126009.

Kunnathully, Vinay S., et al. “InAs Heteroepitaxy on Nanopillar-Patterned GaAs (111)A.”10.1016/j.jcrysgro.2020.125597__Journal of Crystal Growth, 125597, 2020, doi:10.1016/j.jcrysgro.2020.125597.

Kunnathully, Vinay S., et al. “InAs Heteroepitaxy on Nanopillar-Patterned GaAs (111)A.”10.1016/j.jcrysgro.2020.125597__Journal of Crystal Growth, vol. 537, 125597, Elsevier BV, 2020, doi:10.1016/j.jcrysgro.2020.125597.

Henksmeier, Tobias, et al. “Molecular Beam Epitaxy Growth and Temperature-Dependent Electrical Characterization of Carbon-Doped GaAs on GaAs(1f1f1)B.”10.1016/j.jcrysgro.2019.02.006__Journal of Crystal Growth, vol. 512, Elsevier BV, 2019, pp. 164–68, doi:10.1016/j.jcrysgro.2019.02.006.

Wecker, T., et al. “Linear and Nonlinear Behaviour of Near-IR Intersubband Transitions of Cubic GaN/AlN Multi Quantum Well Structures.”10.1016/j.jcrysgro.2017.01.022__Journal of Crystal Growth, vol. 477, Elsevier BV, 2017, pp. 149–53, doi:10.1016/j.jcrysgro.2017.01.022.

Ritzmann, Julian, et al. “Overcoming Ehrlich-Schwöbel Barrier in (1f1f1)A GaAs Molecular Beam Epitaxy.”10.1016/j.jcrysgro.2017.10.029__Journal of Crystal Growth, vol. 481, Elsevier BV, 2017, pp. 7–10, doi:10.1016/j.jcrysgro.2017.10.029.

Scholz, Sven, et al. “Focused Ion Beam Supported Growth of Monocrystalline Wurtzite InAs Nanowires Grown by Molecular Beam Epitaxy.”10.1016/j.jcrysgro.2017.04.013__Journal of Crystal Growth, vol. 470, Elsevier BV, 2017, pp. 46–50, doi:10.1016/j.jcrysgro.2017.04.013.

Sharma, Nandlal, and Dirk Reuter. “A Modified Gradient Approach for the Growth of Low-Density InAs Quantum Dot Molecules by Molecular Beam Epitaxy.”10.1016/j.jcrysgro.2016.11.117__Journal of Crystal Growth, vol. 477, Elsevier BV, 2016, pp. 225–29, doi:10.1016/j.jcrysgro.2016.11.117.

Bürger, M., et al. “Cubic GaN Quantum Dots Embedded in Zinc-Blende AlN Microdisks.”10.1016/j.jcrysgro.2012.12.058__Journal of Crystal Growth, vol. 378, Elsevier BV, 2013, pp. 287–90, doi:10.1016/j.jcrysgro.2012.12.058.

Kemper, R. M., et al. “Growth of Cubic GaN on 3C–SiC/Si (001) Nanostructures.”10.1016/j.jcrysgro.2012.10.011__Journal of Crystal Growth, vol. 378, Elsevier BV, 2012, pp. 291–94, doi:10.1016/j.jcrysgro.2012.10.011.

Trunov, K., et al. “(100) GaAs/AlxGxAs Heterostructures for Zeeman Spin Splitting Studies of Hole Quantum Wires.”10.1016/j.jcrysgro.2010.11.060__Journal of Crystal Growth, vol. 323, no. 1, Elsevier BV, 2010, pp. 48–51, doi:10.1016/j.jcrysgro.2010.11.060.

Kemper, R. M., et al. “Growth of Cubic GaN on Nano-Patterned 3C-SiC/Si (001) Substrates.”10.1016/j.jcrysgro.2010.12.042__Journal of Crystal Growth, vol. 323, no. 1, Elsevier BV, 2010, pp. 84–87, doi:10.1016/j.jcrysgro.2010.12.042.

Hao, Rui, et al. “The Effects of Annealing on Non-Polar (112¯0) a-Plane GaN Films.”10.1016/j.jcrysgro.2010.08.041__Journal of Crystal Growth, vol. 312, no. 23, Elsevier BV, 2010, pp. 3536–43, doi:10.1016/j.jcrysgro.2010.08.041.

Rauls, E., et al. “Understanding the Cubic AlN Growth Plane from First Principles.”10.1016/j.jcrysgro.2010.07.027__Journal of Crystal Growth, vol. 312, 2010, pp. 2892–95, doi:10.1016/j.jcrysgro.2010.07.027.

Häberlen, M., et al. “Structural Characterization of Cubic and Hexagonal GaN Thin Films Grown by IBA–MBE on SiC/Si.”10.1016/j.jcrysgro.2009.12.048__Journal of Crystal Growth, vol. 312, no. 6, Elsevier BV, 2009, pp. 762–69, doi:10.1016/j.jcrysgro.2009.12.048.

Regolin, I., et al. “Growth and Characterisation of GaAs/InGaAs/GaAs Nanowhiskers on (111) GaAs.”10.1016/j.jcrysgro.2006.10.122__Journal of Crystal Growth, vol. 298, Elsevier BV, 2006, pp. 607–11, doi:10.1016/j.jcrysgro.2006.10.122.

Yang, J. L., et al. “Sticking Behavior of the Dopants Si, C, and Be upon Re-Evaporation of Individually Doped GaAs(100).”10.1016/j.jcrysgro.2006.05.051__Journal of Crystal Growth, 2006, pp. 278–84, doi:10.1016/j.jcrysgro.2006.05.051.