@articleHenksmeier_Schulz_Kluth_Feneberg_Goldhahn_Sanchez_Voigt_Grundmeier_Reuter_2022, title=Remote epitaxy of InxG-xAs (0 0 1) on graphene covered GaAs(0 0 1) substrates, volume=593, DOI=10.1016/j.jcrysgro.2022.126756, number=126756, journal=Journal of Crystal Growth, publisher=Elsevier BV, author=Henksmeier, T. and Schulz, J.F. and Kluth, E. and Feneberg, M. and Goldhahn, R. and Sanchez, A.M. and Voigt, M. and Grundmeier, Guido and Reuter, Dirk, year=2022 
LibreCat: /record/32108
DOI: 10.1016/j.jcrysgro.2022.126756

@articleVerma_Bopp_Finley_Jonas_Zrenner_Reuter_2022, title=Low Areal Densities of InAs Quantum Dots on GaAs(100) Prepared by Molecular Beam Epitaxy, DOI=10.1016/j.jcrysgro.2022.126715, number=126715, journal=Journal of Crystal Growth, publisher=Elsevier BV, author=Verma, A.K. and Bopp, F. and Finley, J.J. and Jonas, B. and Zrenner, A. and Reuter, Dirk, year=2022 
LibreCat: /record/31241
DOI: 10.1016/j.jcrysgro.2022.126715

@articleAlbert_Golla_Meier_2021, title=Optical in-situ temperature management for high-quality ZnO molecular beam epitaxy, volume=557, DOI=10.1016/j.jcrysgro.2020.126009, number=126009, journal=Journal of Crystal Growth, author=Albert, M. and Golla, C. and Meier, Cedrik, year=2021 
LibreCat: /record/20900
DOI: 10.1016/j.jcrysgro.2020.126009

@articleKunnathully_Riedl_Trapp_Langer_Reuter_Lindner_2020, title=InAs heteroepitaxy on nanopillar-patterned GaAs (111)A, DOI=10.1016/j.jcrysgro.2020.125597, number=125597, journal=Journal of Crystal Growth, author=Kunnathully, Vinay S. and Riedl, Thomas and Trapp, Alexander and Langer, Timo and Reuter, Dirk and Lindner, Jörg K.N., year=2020 
LibreCat: /record/17434
DOI: 10.1016/j.jcrysgro.2020.125597

@articleKunnathully_Riedl_Trapp_Langer_Reuter_Lindner_2020, title=InAs heteroepitaxy on nanopillar-patterned GaAs (111)A, volume=537, DOI=10.1016/j.jcrysgro.2020.125597, number=125597, journal=Journal of Crystal Growth, publisher=Elsevier BV, author=Kunnathully, Vinay S. and Riedl, Thomas and Trapp, Alexander and Langer, Timo and Reuter, Dirk and Lindner, Jörg, year=2020 
LibreCat: /record/34091
DOI: 10.1016/j.jcrysgro.2020.125597

@articleHenksmeier_Shvarkov_Trapp_Reuter_2019, title=Molecular beam epitaxy growth and temperature-dependent electrical characterization of carbon-doped GaAs on GaAs(1f1f1)B, volume=512, DOI=10.1016/j.jcrysgro.2019.02.006, journal=Journal of Crystal Growth, publisher=Elsevier BV, author=Henksmeier, Tobias and Shvarkov, Stepan and Trapp, Alexander and Reuter, Dirk, year=2019, pages=164–168 
LibreCat: /record/7800
DOI: 10.1016/j.jcrysgro.2019.02.006

@articleWecker_Jostmeier_Rieger_Neumann_Pawlis_Betz_Reuter_As_2017, title=Linear and nonlinear behaviour of near-IR intersubband transitions of cubic GaN/AlN multi quantum well structures, volume=477, DOI=10.1016/j.jcrysgro.2017.01.022, journal=Journal of Crystal Growth, publisher=Elsevier BV, author=Wecker, T. and Jostmeier, T. and Rieger, T. and Neumann, E. and Pawlis, A. and Betz, M. and Reuter, Dirk and As, Donat Josef, year=2017, pages=149–153 
LibreCat: /record/4810
DOI: 10.1016/j.jcrysgro.2017.01.022

@articleRitzmann_Schott_Gross_Reuter_Ludwig_Wieck_2017, title=Overcoming Ehrlich-Schwöbel barrier in (1f1f1)A GaAs molecular beam epitaxy, volume=481, DOI=10.1016/j.jcrysgro.2017.10.029, journal=Journal of Crystal Growth, publisher=Elsevier BV, author=Ritzmann, Julian and Schott, Rüdiger and Gross, Katherine and Reuter, Dirk and Ludwig, Arne and Wieck, Andreas D., year=2017, pages=7–10 
LibreCat: /record/7020
DOI: 10.1016/j.jcrysgro.2017.10.029

@articleScholz_Schott_Labud_Somsen_Reuter_Ludwig_Wieck_2017, title=Focused ion beam supported growth of monocrystalline wurtzite InAs nanowires grown by molecular beam epitaxy, volume=470, DOI=10.1016/j.jcrysgro.2017.04.013, journal=Journal of Crystal Growth, publisher=Elsevier BV, author=Scholz, Sven and Schott, Rüdiger and Labud, Patrick A. and Somsen, Christoph and Reuter, Dirk and Ludwig, Arne and Wieck, Andreas D., year=2017, pages=46–50 
LibreCat: /record/7027
DOI: 10.1016/j.jcrysgro.2017.04.013

@articleSharma_Reuter_2016, title=A modified gradient approach for the growth of low-density InAs quantum dot molecules by molecular beam epitaxy, volume=477, DOI=10.1016/j.jcrysgro.2016.11.117, journal=Journal of Crystal Growth, publisher=Elsevier BV, author=Sharma, Nandlal and Reuter, Dirk, year=2016, pages=225–229 
LibreCat: /record/7024
DOI: 10.1016/j.jcrysgro.2016.11.117

@articleBürger_Kemper_Bader_Ruth_Declair_Meier_Förstner_As_2013, title=Cubic GaN quantum dots embedded in zinc-blende AlN microdisks, volume=378, DOI=10.1016/j.jcrysgro.2012.12.058, journal=Journal of Crystal Growth, publisher=Elsevier BV, author=Bürger, M. and Kemper, R.M. and Bader, C.A. and Ruth, M. and Declair, S. and Meier, Cedrik and Förstner, Jens and As, D.J., year=2013, pages=287–290 
LibreCat: /record/3959
DOI: 10.1016/j.jcrysgro.2012.12.058

@articleKemper_Hiller_Stauden_Pezoldt_Duschik_Niendorf_Maier_Meertens_Tillmann_As_et al._2012, title=Growth of cubic GaN on 3C–SiC/Si (001) nanostructures, volume=378, DOI=10.1016/j.jcrysgro.2012.10.011, journal=Journal of Crystal Growth, publisher=Elsevier BV, author=Kemper, R.M. and Hiller, L. and Stauden, T. and Pezoldt, J. and Duschik, K. and Niendorf, T. and Maier, H.J. and Meertens, D. and Tillmann, K. and As, D.J. and et al., year=2012, pages=291–294 
LibreCat: /record/4104
DOI: 10.1016/j.jcrysgro.2012.10.011

@articleTrunov_Reuter_Ludwig_Chen_Klochan_Micolich_Hamilton_Wieck_2010, title=(100) GaAs/AlxGxAs heterostructures for Zeeman spin splitting studies of hole quantum wires, volume=323, DOI=10.1016/j.jcrysgro.2010.11.060, number=1, journal=Journal of Crystal Growth, publisher=Elsevier BV, author=Trunov, K. and Reuter, Dirk and Ludwig, A. and Chen, J.C.H. and Klochan, O. and Micolich, A.P. and Hamilton, A.R. and Wieck, A.D., year=2010, pages=48–51 
LibreCat: /record/7705
DOI: 10.1016/j.jcrysgro.2010.11.060

@articleKemper_Weinl_Mietze_Häberlen_Schupp_Tschumak_Lindner_Lischka_As_2010, title=Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates, volume=323, DOI=10.1016/j.jcrysgro.2010.12.042, number=1, journal=Journal of Crystal Growth, publisher=Elsevier BV, author=Kemper, R.M. and Weinl, M. and Mietze, C. and Häberlen, M. and Schupp, T. and Tschumak, E. and Lindner, Jörg and Lischka, K. and As, Donald , year=2010, pages=84–87 
LibreCat: /record/4144
DOI: 10.1016/j.jcrysgro.2010.12.042

@articleHao_Zhu_Häberlen_Chang_Kappers_Oliver_Humphreys_Moram_2010, title=The effects of annealing on non-polar (112¯0) a-plane GaN films, volume=312, DOI=10.1016/j.jcrysgro.2010.08.041, number=23, journal=Journal of Crystal Growth, publisher=Elsevier BV, author=Hao, Rui and Zhu, T. and Häberlen, M. and Chang, T.Y. and Kappers, M.J. and Oliver, R.A. and Humphreys, C.J. and Moram, M.A., year=2010, pages=3536–3543 
LibreCat: /record/4214
DOI: 10.1016/j.jcrysgro.2010.08.041

@articleRauls_Wiebe_Schmidt_2010, title=Understanding the cubic AlN growth plane from first principles, volume=312, DOI=10.1016/j.jcrysgro.2010.07.027, journal=Journal of Crystal Growth, author=Rauls, E. and Wiebe, J. and Schmidt, Wolf Gero, year=2010, pages=2892–2895 
LibreCat: /record/13830
DOI: 10.1016/j.jcrysgro.2010.07.027

@articleHäberlen_Gerlach_Murphy_Lindner_Stritzker_2009, title=Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si, volume=312, DOI=10.1016/j.jcrysgro.2009.12.048, number=6, journal=Journal of Crystal Growth, publisher=Elsevier BV, author=Häberlen, M. and Gerlach, J.W. and Murphy, B. and Lindner, Jörg and Stritzker, B., year=2009, pages=762–769 
LibreCat: /record/4192
DOI: 10.1016/j.jcrysgro.2009.12.048

@articleRegolin_Sudfeld_Lüttjohann_Khorenko_Prost_Kästner_Dumpich_Meier_Lorke_Tegude_2006, title=Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (111) GaAs, volume=298, DOI=10.1016/j.jcrysgro.2006.10.122, journal=Journal of Crystal Growth, publisher=Elsevier BV, author=Regolin, I. and Sudfeld, D. and Lüttjohann, S. and Khorenko, V. and Prost, W. and Kästner, J. and Dumpich, G. and Meier, Cedrik and Lorke, A. and Tegude, F.-J., year=2006, pages=607–611 
LibreCat: /record/7646
DOI: 10.1016/j.jcrysgro.2006.10.122

@articleYang_Reuter_Wieck_2006, title=Sticking behavior of the dopants Si, C, and Be upon re-evaporation of individually doped GaAs(100), DOI=10.1016/j.jcrysgro.2006.05.051, journal=Journal of Crystal Growth, author=Yang, J.L. and Reuter, Dirk and Wieck, A.D., year=2006, pages=278–284 
LibreCat: /record/8664
DOI: 10.1016/j.jcrysgro.2006.05.051