Henksmeier, T., J.F. Schulz, E. Kluth, M. Feneberg, R. Goldhahn, A.M. Sanchez, M. Voigt, Guido Grundmeier, and Dirk Reuter. “Remote Epitaxy of InxG-XAs (0 0 1) on Graphene Covered GaAs(0 0 1) Substrates.”https://doi.org/10.1016/j.jcrysgro.2022.126756__Journal of Crystal Growth 593 (2022).https://doi.org/10.1016/j.jcrysgro.2022.126756 .

Verma, A.K., F. Bopp, J.J. Finley, B. Jonas, A. Zrenner, and Dirk Reuter. “Low Areal Densities of InAs Quantum Dots on GaAs(100) Prepared by Molecular Beam Epitaxy.”https://doi.org/10.1016/j.jcrysgro.2022.126715__Journal of Crystal Growth, 2022.https://doi.org/10.1016/j.jcrysgro.2022.126715 .

Albert, M., C. Golla, and Cedrik Meier. “Optical In-Situ Temperature Management for High-Quality ZnO Molecular Beam Epitaxy.”https://doi.org/10.1016/j.jcrysgro.2020.126009__Journal of Crystal Growth 557 (2021).https://doi.org/10.1016/j.jcrysgro.2020.126009 .

Kunnathully, Vinay S., Thomas Riedl, Alexander Trapp, Timo Langer, Dirk Reuter, and Jörg K.N. Lindner. “InAs Heteroepitaxy on Nanopillar-Patterned GaAs (111)A.”https://doi.org/10.1016/j.jcrysgro.2020.125597__Journal of Crystal Growth, 2020.https://doi.org/10.1016/j.jcrysgro.2020.125597 .

Kunnathully, Vinay S., Thomas Riedl, Alexander Trapp, Timo Langer, Dirk Reuter, and Jörg Lindner. “InAs Heteroepitaxy on Nanopillar-Patterned GaAs (111)A.”https://doi.org/10.1016/j.jcrysgro.2020.125597__Journal of Crystal Growth 537 (2020).https://doi.org/10.1016/j.jcrysgro.2020.125597 .

Henksmeier, Tobias, Stepan Shvarkov, Alexander Trapp, and Dirk Reuter. “Molecular Beam Epitaxy Growth and Temperature-Dependent Electrical Characterization of Carbon-Doped GaAs on GaAs(1f1f1)B.”https://doi.org/10.1016/j.jcrysgro.2019.02.006__Journal of Crystal Growth 512 (2019): 164–68.https://doi.org/10.1016/j.jcrysgro.2019.02.006 .

Wecker, T., T. Jostmeier, T. Rieger, E. Neumann, A. Pawlis, M. Betz, Dirk Reuter, and Donat Josef As. “Linear and Nonlinear Behaviour of Near-IR Intersubband Transitions of Cubic GaN/AlN Multi Quantum Well Structures.”https://doi.org/10.1016/j.jcrysgro.2017.01.022__Journal of Crystal Growth 477 (2017): 149–53.https://doi.org/10.1016/j.jcrysgro.2017.01.022 .

Ritzmann, Julian, Rüdiger Schott, Katherine Gross, Dirk Reuter, Arne Ludwig, and Andreas D. Wieck. “Overcoming Ehrlich-Schwöbel Barrier in (1f1f1)A GaAs Molecular Beam Epitaxy.”https://doi.org/10.1016/j.jcrysgro.2017.10.029__Journal of Crystal Growth 481 (2017): 7–10.https://doi.org/10.1016/j.jcrysgro.2017.10.029 .

Scholz, Sven, Rüdiger Schott, Patrick A. Labud, Christoph Somsen, Dirk Reuter, Arne Ludwig, and Andreas D. Wieck. “Focused Ion Beam Supported Growth of Monocrystalline Wurtzite InAs Nanowires Grown by Molecular Beam Epitaxy.”https://doi.org/10.1016/j.jcrysgro.2017.04.013__Journal of Crystal Growth 470 (2017): 46–50.https://doi.org/10.1016/j.jcrysgro.2017.04.013 .

Sharma, Nandlal, and Dirk Reuter. “A Modified Gradient Approach for the Growth of Low-Density InAs Quantum Dot Molecules by Molecular Beam Epitaxy.”https://doi.org/10.1016/j.jcrysgro.2016.11.117__Journal of Crystal Growth 477 (2016): 225–29.https://doi.org/10.1016/j.jcrysgro.2016.11.117 .

Bürger, M., R.M. Kemper, C.A. Bader, M. Ruth, S. Declair, Cedrik Meier, Jens Förstner, and D.J. As. “Cubic GaN Quantum Dots Embedded in Zinc-Blende AlN Microdisks.”https://doi.org/10.1016/j.jcrysgro.2012.12.058__Journal of Crystal Growth 378 (2013): 287–90.https://doi.org/10.1016/j.jcrysgro.2012.12.058 .

Kemper, R.M., L. Hiller, T. Stauden, J. Pezoldt, K. Duschik, T. Niendorf, H.J. Maier, et al. “Growth of Cubic GaN on 3C–SiC/Si (001) Nanostructures.”https://doi.org/10.1016/j.jcrysgro.2012.10.011__Journal of Crystal Growth 378 (2012): 291–94.https://doi.org/10.1016/j.jcrysgro.2012.10.011 .

Trunov, K., Dirk Reuter, A. Ludwig, J.C.H. Chen, O. Klochan, A.P. Micolich, A.R. Hamilton, and A.D. Wieck. “(100) GaAs/AlxGxAs Heterostructures for Zeeman Spin Splitting Studies of Hole Quantum Wires.”https://doi.org/10.1016/j.jcrysgro.2010.11.060__Journal of Crystal Growth 323, no. 1 (2010): 48–51.https://doi.org/10.1016/j.jcrysgro.2010.11.060 .

Kemper, R.M., M. Weinl, C. Mietze, M. Häberlen, T. Schupp, E. Tschumak, Jörg Lindner, K. Lischka, and Donaldhttps://doi.org/10.1016/j.jcrysgro.2010.12.042__As. “Growth of Cubic GaN on Nano-Patterned 3C-SiC/Si (001) Substrates.”https://doi.org/10.1016/j.jcrysgro.2010.12.042__Journal of Crystal Growth 323, no. 1 (2010): 84–87.https://doi.org/10.1016/j.jcrysgro.2010.12.042 .

Hao, Rui, T. Zhu, M. Häberlen, T.Y. Chang, M.J. Kappers, R.A. Oliver, C.J. Humphreys, and M.A. Moram. “The Effects of Annealing on Non-Polar (112¯0) a-Plane GaN Films.”https://doi.org/10.1016/j.jcrysgro.2010.08.041__Journal of Crystal Growth 312, no. 23 (2010): 3536–43.https://doi.org/10.1016/j.jcrysgro.2010.08.041 .

Rauls, E., J. Wiebe, and Wolf Gero Schmidt. “Understanding the Cubic AlN Growth Plane from First Principles.”https://doi.org/10.1016/j.jcrysgro.2010.07.027__Journal of Crystal Growth 312 (2010): 2892–95.https://doi.org/10.1016/j.jcrysgro.2010.07.027 .

Häberlen, M., J.W. Gerlach, B. Murphy, Jörg Lindner, and B. Stritzker. “Structural Characterization of Cubic and Hexagonal GaN Thin Films Grown by IBA–MBE on SiC/Si.”https://doi.org/10.1016/j.jcrysgro.2009.12.048__Journal of Crystal Growth 312, no. 6 (2009): 762–69.https://doi.org/10.1016/j.jcrysgro.2009.12.048 .

Regolin, I., D. Sudfeld, S. Lüttjohann, V. Khorenko, W. Prost, J. Kästner, G. Dumpich, Cedrik Meier, A. Lorke, and F.-J. Tegude. “Growth and Characterisation of GaAs/InGaAs/GaAs Nanowhiskers on (111) GaAs.”https://doi.org/10.1016/j.jcrysgro.2006.10.122__Journal of Crystal Growth 298 (2006): 607–11.https://doi.org/10.1016/j.jcrysgro.2006.10.122 .

Yang, J.L., Dirk Reuter, and A.D. Wieck. “Sticking Behavior of the Dopants Si, C, and Be upon Re-Evaporation of Individually Doped GaAs(100).”https://doi.org/10.1016/j.jcrysgro.2006.05.051__Journal of Crystal Growth, 2006, 278–84.https://doi.org/10.1016/j.jcrysgro.2006.05.051 .