Henksmeier T, Schulz JF, Kluth E, et al. Remote epitaxy of InxG-xAs (0 0 1) on graphene covered GaAs(0 0 1) substrates. Journal of Crystal Growth. 2022;593. doi:10.1016/j.jcrysgro.2022.126756
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DOI: 10.1016/j.jcrysgro.2022.126756

Verma AK, Bopp F, Finley JJ, Jonas B, Zrenner A, Reuter D. Low Areal Densities of InAs Quantum Dots on GaAs(100) Prepared by Molecular Beam Epitaxy. Journal of Crystal Growth. Published online 2022. doi:10.1016/j.jcrysgro.2022.126715
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DOI: 10.1016/j.jcrysgro.2022.126715

Albert M, Golla C, Meier C. Optical in-situ temperature management for high-quality ZnO molecular beam epitaxy. Journal of Crystal Growth. 2021;557. doi:10.1016/j.jcrysgro.2020.126009
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DOI: 10.1016/j.jcrysgro.2020.126009

Kunnathully VS, Riedl T, Trapp A, Langer T, Reuter D, Lindner JKN. InAs heteroepitaxy on nanopillar-patterned GaAs (111)A. Journal of Crystal Growth. 2020. doi:10.1016/j.jcrysgro.2020.125597
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DOI: 10.1016/j.jcrysgro.2020.125597

Kunnathully VS, Riedl T, Trapp A, Langer T, Reuter D, Lindner J. InAs heteroepitaxy on nanopillar-patterned GaAs (111)A. Journal of Crystal Growth. 2020;537. doi:10.1016/j.jcrysgro.2020.125597
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DOI: 10.1016/j.jcrysgro.2020.125597

Henksmeier T, Shvarkov S, Trapp A, Reuter D. Molecular beam epitaxy growth and temperature-dependent electrical characterization of carbon-doped GaAs on GaAs(1f1f1)B. Journal of Crystal Growth. 2019;512:164-168. doi:10.1016/j.jcrysgro.2019.02.006
LibreCat: /record/7800
DOI: 10.1016/j.jcrysgro.2019.02.006

Wecker T, Jostmeier T, Rieger T, et al. Linear and nonlinear behaviour of near-IR intersubband transitions of cubic GaN/AlN multi quantum well structures. Journal of Crystal Growth. 2017;477:149-153. doi:10.1016/j.jcrysgro.2017.01.022
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DOI: 10.1016/j.jcrysgro.2017.01.022

Ritzmann J, Schott R, Gross K, Reuter D, Ludwig A, Wieck AD. Overcoming Ehrlich-Schwöbel barrier in (1f1f1)A GaAs molecular beam epitaxy. Journal of Crystal Growth. 2017;481:7-10. doi:10.1016/j.jcrysgro.2017.10.029
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DOI: 10.1016/j.jcrysgro.2017.10.029

Scholz S, Schott R, Labud PA, et al. Focused ion beam supported growth of monocrystalline wurtzite InAs nanowires grown by molecular beam epitaxy. Journal of Crystal Growth. 2017;470:46-50. doi:10.1016/j.jcrysgro.2017.04.013
LibreCat: /record/7027
DOI: 10.1016/j.jcrysgro.2017.04.013

Sharma N, Reuter D. A modified gradient approach for the growth of low-density InAs quantum dot molecules by molecular beam epitaxy. Journal of Crystal Growth. 2016;477:225-229. doi:10.1016/j.jcrysgro.2016.11.117
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DOI: 10.1016/j.jcrysgro.2016.11.117

Bürger M, Kemper RM, Bader CA, et al. Cubic GaN quantum dots embedded in zinc-blende AlN microdisks. Journal of Crystal Growth. 2013;378:287-290. doi:10.1016/j.jcrysgro.2012.12.058
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DOI: 10.1016/j.jcrysgro.2012.12.058

Kemper RM, Hiller L, Stauden T, et al. Growth of cubic GaN on 3C–SiC/Si (001) nanostructures. Journal of Crystal Growth. 2012;378:291-294. doi:10.1016/j.jcrysgro.2012.10.011
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DOI: 10.1016/j.jcrysgro.2012.10.011

Trunov K, Reuter D, Ludwig A, et al. (100) GaAs/AlxGxAs heterostructures for Zeeman spin splitting studies of hole quantum wires. Journal of Crystal Growth. 2010;323(1):48-51. doi:10.1016/j.jcrysgro.2010.11.060
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DOI: 10.1016/j.jcrysgro.2010.11.060

Kemper RM, Weinl M, Mietze C, et al. Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates. Journal of Crystal Growth. 2010;323(1):84-87. doi:10.1016/j.jcrysgro.2010.12.042
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DOI: 10.1016/j.jcrysgro.2010.12.042

Hao R, Zhu T, Häberlen M, et al. The effects of annealing on non-polar (112¯0) a-plane GaN films. Journal of Crystal Growth. 2010;312(23):3536-3543. doi:10.1016/j.jcrysgro.2010.08.041
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DOI: 10.1016/j.jcrysgro.2010.08.041

Rauls E, Wiebe J, Schmidt WG. Understanding the cubic AlN growth plane from first principles. Journal of Crystal Growth. 2010;312:2892-2895. doi:10.1016/j.jcrysgro.2010.07.027
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DOI: 10.1016/j.jcrysgro.2010.07.027

Häberlen M, Gerlach JW, Murphy B, Lindner J, Stritzker B. Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si. Journal of Crystal Growth. 2009;312(6):762-769. doi:10.1016/j.jcrysgro.2009.12.048
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DOI: 10.1016/j.jcrysgro.2009.12.048

Regolin I, Sudfeld D, Lüttjohann S, et al. Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (111) GaAs. Journal of Crystal Growth. 2006;298:607-611. doi:10.1016/j.jcrysgro.2006.10.122
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DOI: 10.1016/j.jcrysgro.2006.10.122

Yang JL, Reuter D, Wieck AD. Sticking behavior of the dopants Si, C, and Be upon re-evaporation of individually doped GaAs(100). Journal of Crystal Growth. 2006:278-284. doi:10.1016/j.jcrysgro.2006.05.051
LibreCat: /record/8664
DOI: 10.1016/j.jcrysgro.2006.05.051