Cubic GaN quantum dots embedded in zinc-blende AlN microdisks
M. Bürger, R.M. Kemper, C.A. Bader, M. Ruth, S. Declair, C. Meier, J. Förstner, D.J. As, Journal of Crystal Growth 378 (2013) 287–290.
LibreCat: /record/3959
DOI: 10.1016/j.jcrysgro.2012.12.058

Growth of cubic GaN on 3C–SiC/Si (001) nanostructures
R.M. Kemper, L. Hiller, T. Stauden, J. Pezoldt, K. Duschik, T. Niendorf, H.J. Maier, D. Meertens, K. Tillmann, D.J. As, J. Lindner, Journal of Crystal Growth 378 (2012) 291–294.
LibreCat: /record/4104
DOI: 10.1016/j.jcrysgro.2012.10.011

(100) GaAs/AlxGxAs heterostructures for Zeeman spin splitting studies of hole quantum wires
K. Trunov, D. Reuter, A. Ludwig, J.C.H. Chen, O. Klochan, A.P. Micolich, A.R. Hamilton, A.D. Wieck, Journal of Crystal Growth 323 (2010) 48–51.
LibreCat: /record/7705
DOI: 10.1016/j.jcrysgro.2010.11.060

Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates
R.M. Kemper, M. Weinl, C. Mietze, M. Häberlen, T. Schupp, E. Tschumak, J. Lindner, K. Lischka, D. As, Journal of Crystal Growth 323 (2010) 84–87.
LibreCat: /record/4144
DOI: 10.1016/j.jcrysgro.2010.12.042

The effects of annealing on non-polar (112¯0) a-plane GaN films
R. Hao, T. Zhu, M. Häberlen, T.Y. Chang, M.J. Kappers, R.A. Oliver, C.J. Humphreys, M.A. Moram, Journal of Crystal Growth 312 (2010) 3536–3543.
LibreCat: /record/4214
DOI: 10.1016/j.jcrysgro.2010.08.041

Understanding the cubic AlN growth plane from first principles
E. Rauls, J. Wiebe, W.G. Schmidt, Journal of Crystal Growth 312 (2010) 2892–2895.
LibreCat: /record/13830
DOI: 10.1016/j.jcrysgro.2010.07.027

Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si
M. Häberlen, J.W. Gerlach, B. Murphy, J. Lindner, B. Stritzker, Journal of Crystal Growth 312 (2009) 762–769.
LibreCat: /record/4192
DOI: 10.1016/j.jcrysgro.2009.12.048

Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (111) GaAs
I. Regolin, D. Sudfeld, S. Lüttjohann, V. Khorenko, W. Prost, J. Kästner, G. Dumpich, C. Meier, A. Lorke, F.-J. Tegude, Journal of Crystal Growth 298 (2006) 607–611.
LibreCat: /record/7646
DOI: 10.1016/j.jcrysgro.2006.10.122

Sticking behavior of the dopants Si, C, and Be upon re-evaporation of individually doped GaAs(100)
J.L. Yang, D. Reuter, A.D. Wieck, Journal of Crystal Growth (2006) 278–284.
LibreCat: /record/8664
DOI: 10.1016/j.jcrysgro.2006.05.051