Applicability of molecular statics simulation to partial dislocations in GaAs
T. Riedl, J. Lindner, Solid State Communications 314–315 (2020).

Applicability of molecular statics simulation to partial dislocations in GaAs
T. Riedl, J. Lindner, Solid State Communications 314–315 (2020).

Correlation and dephasing effects on the non-radiative coherence between bright excitons in an InAs QD ensemble measured with 2D spectroscopy
G. Moody, R. Singh, H. Li, I.A. Akimov, M. Bayer, D. Reuter, A.D. Wieck, S.T. Cundiff, Solid State Communications 163 (2013) 65–69.

Rabi flopping of charge and spin currents generated by ultrafast two-colour photoexcitation of semiconductor quantum wells
B. Pasenow, H.T. Duc, T. Meier, S.W. Koch, Solid State Communications 145 (2008) 61–65.

Rabi flopping of charge and spin currents generated by ultrafast two-colour photoexcitation of semiconductor quantum wells
B. Pasenow, H.T. Duc, T. Meier, S.W. Koch, Solid State Communications 145 (2008) 61–65.

Rabi flopping of charge and spin currents generated by ultrafast two-colour photoexcitation of semiconductor quantum wells
B. Pasenow, H.T. Duc, T. Meier, S.W. Koch, Solid State Communications (2008) 61–65.

First principles calculations of interface phonons of an Epitaxial Sb monolayer on GaAs(110) and InP(110)
W.G. Schmidt, G. Srivastava, Solid State Communications 89 (1994) 345–348.