Applicability of molecular statics simulation to partial dislocations in GaAs
T. Riedl, J. Lindner, Solid State Communications 314–315 (2020).
LibreCat: /record/34090
DOI: 10.1016/j.ssc.2020.113927

Applicability of molecular statics simulation to partial dislocations in GaAs
T. Riedl, J. Lindner, Solid State Communications 314–315 (2020).
LibreCat: /record/34089
DOI: 10.1016/j.ssc.2020.113927

Correlation and dephasing effects on the non-radiative coherence between bright excitons in an InAs QD ensemble measured with 2D spectroscopy
G. Moody, R. Singh, H. Li, I.A. Akimov, M. Bayer, D. Reuter, A.D. Wieck, S.T. Cundiff, Solid State Communications 163 (2013) 65–69.
LibreCat: /record/7296
DOI: 10.1016/j.ssc.2013.03.025

Rabi flopping of charge and spin currents generated by ultrafast two-colour photoexcitation of semiconductor quantum wells
B. Pasenow, H.T. Duc, T. Meier, S.W. Koch, Solid State Communications 145 (2008) 61–65.
LibreCat: /record/40411
DOI: 10.1016/j.ssc.2007.09.029

Rabi flopping of charge and spin currents generated by ultrafast two-colour photoexcitation of semiconductor quantum wells
B. Pasenow, H.T. Duc, T. Meier, S.W. Koch, Solid State Communications 145 (2008) 61–65.
LibreCat: /record/24976
DOI: 10.1016/j.ssc.2007.09.029

Rabi flopping of charge and spin currents generated by ultrafast two-colour photoexcitation of semiconductor quantum wells
B. Pasenow, H.T. Duc, T. Meier, S.W. Koch, Solid State Communications (2008) 61–65.
LibreCat: /record/23482
DOI: 10.1016/j.ssc.2007.09.029

First principles calculations of interface phonons of an Epitaxial Sb monolayer on GaAs(110) and InP(110)
W.G. Schmidt, G. Srivastava, Solid State Communications 89 (1994) 345–348.
LibreCat: /record/13854
DOI: 10.1016/0038-1098(94)90597-5