As on InP(110) studied within density-functional theory
U. Grossner, W.G. Schmidt, F. Bechstedt, Physical Review B 56 (1997) 6719–6726.

Antimony-stabilized GaAs(001)(2×4) reconstructions
W.G. Schmidt, F. Bechstedt, Physical Review B 55 (1997) 13051–13057.

Violation of particle number conservation in the GW approximation
A. Schindlmayr, Physical Review B 56 (1997) 3528–3531.

Geometry and electronic structure of GaAs(001)(2×4) reconstructions
W.G. Schmidt, F. Bechstedt, Physical Review B 54 (1996) 16742–16748.

Structure of the diamond (111) surface: Single-dangling-bond versus triple-dangling-bond face
A. Scholze, W.G. Schmidt, F. Bechstedt, Physical Review B 53 (1996) 13725–13733.

Hydrogen interaction with Sb-terminated GaAs and InP (110) surfaces
P.V. Santos, N. Esser, J. Groenen, M. Cardona, W.G. Schmidt, F. Bechstedt, Physical Review B 52 (1995) 17379–17385.

Optical properties of Sb-terminated GaAs and InP (110) surfaces
P.V. Santos, N. Esser, M. Cardona, W.G. Schmidt, F. Bechstedt, Physical Review B 52 (1995) 12158–12167.

III-V(110) surface dynamics from anab initiofrozen-phonon approach
W.G. Schmidt, F. Bechstedt, G.P. Srivastava, Physical Review B 52 (1995) 2001–2007.

Geometrical and electronic structure of the reconstructed diamond (100) surface
C. Kress, M. Fiedler, W.G. Schmidt, F. Bechstedt, Physical Review B 50 (1995) 17697–17700.

Exchange reactions versus adsorption geometries for Se/GaAs(110)
W.G. Schmidt, F. Bechstedt, Physical Review B 50 (1995) 17651–17654.

Se/GaAs(110): Atomic and electronic structure
W.G. Schmidt, F. Bechstedt, Physical Review B 50 (1995) 17280–17291.

Density-functional theory and the v-representability problem for model strongly correlated electron systems
A. Schindlmayr, R.W. Godby, Physical Review B 51 (1995) 10427–10435.

Chemisorption of antimony on GaAs(110)
W.G. Schmidt, B. Wenzien, F. Bechstedt, Physical Review B 49 (1994) 4731–4744.