Robust Si 3 N 4 masks for 100 nm selective area epitaxy of GaAs-based nanostructures
V. Zolatanosha, D. Reuter, Microelectronic Engineering 180 (2017) 35–39.

Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics
T. Meyers, F.F. Vidor, K. Brassat, J. Lindner, U. Hilleringmann, Microelectronic Engineering 174 (2016) 35–39.

Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics
T. Meyers, F.F. Vidor, K. Brassat, J.K.N. Lindner, U. Hilleringmann, Microelectronic Engineering 174 (2016) 35–39.

ZnO nanoparticle thin-film transistors on flexible substrate using spray-coating technique
F.F. Vidor, T. Meyers, G.I. Wirth, U. Hilleringmann, Microelectronic Engineering 159 (2016) 155–158.

Nanoimprint-induced effects on electrical and optical properties of quantum well structures
S. Zankovych, I. Maximov, I. Shorubalko, J. Seekamp, M. Beck, S. Romanov, D. Reuter, P. Schafmeister, A.D. Wieck, J. Ahopelto, C.M. Sotomayor Torres, L. Montelius, Microelectronic Engineering (2003) 214–220.

Nanometer scale organic thin film transistors with Pentacene
Ch. Pannemann, T. Diekmann, U. Hilleringmann, Microelectronic Engineering 67–68 (2003) 845–852.

Quantum wire fabrication from compensating-layer GaAs–AlGaAs heterostructures
D. Kähler, U. Kunze, D. Reuter, A.D. Wieck, Microelectronic Engineering (2002) 619–623.

Characterization of submicron NMOS devices due to visible light emission
I. Schönstein, J. Müller, U. Hilleringmann, K. Goser, Microelectronic Engineering 21 (2002) 363–366.

Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon
U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 211–214.

Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique
J.T. Horstmann, U. Hilleringmann, K. Goser, Microelectronic Engineering 30 (2002) 431–434.

A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV
V. Mankowski, U. Hilleringmann, K. Schumacher, Microelectronic Engineering 53 (2002) 525–528.

1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique
J.T. Horstmann, U. Hilleringmann, K. Goser, Microelectronic Engineering 53 (2002) 213–216.

A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits
U. Hilleringmann, K. Knospe, C. Heite, K. Schumacher, K. Goser, Microelectronic Engineering 15 (2002) 289–292.

Floating gate structures as nonvolatile analog memory cells in 1.0;cm-LOCOS-CMOS technology with PZT dielectrica
A. Soennecken, U. Hilleringmann, K. Goser, Microelectronic Engineering 15 (2002) 633–636.

Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon
U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 211–214.

CMOS compatible micromachining by dry silicon-etching techniques
S. Adams, U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 191–194.

12 kV low current cascaded light triggered switch on one silicon chip
V. Mankowski, U. Hilleringmann, K. Schumacher, Microelectronic Engineering 46 (2002) 413–417.

A structure definition technique for 25 nm lines of silicon and related materials
U. Hilleringmann, T. Vieregge, J.T. Horstmann, Microelectronic Engineering 53 (2002) 569–572.