Zolatanosha, V., &; Reuter, D. (2017). Robust Si 3 N 4 masks for 100 nm selective area epitaxy of GaAs-based nanostructures. Microelectronic Engineering, 180, 35–39.https://doi.org/10.1016/j.mee.2017.05.053 
LibreCat: /record/7026
DOI: 10.1016/j.mee.2017.05.053

Meyers, T., Vidor, F. F., Brassat, K., Lindner, J., &; Hilleringmann, U. (2016). Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics. Microelectronic Engineering, 174, 35–39.https://doi.org/10.1016/j.mee.2016.12.018 
LibreCat: /record/3956
DOI: 10.1016/j.mee.2016.12.018

Meyers, T., Vidor, F. F., Brassat, K., Lindner, J. K. N., &; Hilleringmann, U. (2016). Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics. Microelectronic Engineering, 174, 35–39.https://doi.org/10.1016/j.mee.2016.12.018 
LibreCat: /record/39447
DOI: 10.1016/j.mee.2016.12.018

Vidor, F. F., Meyers, T., Wirth, G. I., &; Hilleringmann, U. (2016). ZnO nanoparticle thin-film transistors on flexible substrate using spray-coating technique. Microelectronic Engineering, 159, 155–158.https://doi.org/10.1016/j.mee.2016.02.059 
LibreCat: /record/39466
DOI: 10.1016/j.mee.2016.02.059

Zankovych, S., Maximov, I., Shorubalko, I., Seekamp, J., Beck, M., Romanov, S.,https://doi.org/10.1016/s0167-9317(03)00074-1__Montelius, L. (2003). Nanoimprint-induced effects on electrical and optical properties of quantum well structures. Microelectronic Engineering, 214–220.https://doi.org/10.1016/s0167-9317(03)00074-1 
LibreCat: /record/8728
DOI: 10.1016/s0167-9317(03)00074-1

Pannemann, Ch., Diekmann, T., &; Hilleringmann, U. (2003). Nanometer scale organic thin film transistors with Pentacene. Microelectronic Engineering, 67–68, 845–852.https://doi.org/10.1016/s0167-9317(03)00146-1 
LibreCat: /record/39851
DOI: 10.1016/s0167-9317(03)00146-1

Kähler, D., Kunze, U., Reuter, D., &; Wieck, A. D. (2002). Quantum wire fabrication from compensating-layer GaAs–AlGaAs heterostructures. Microelectronic Engineering, 619–623.https://doi.org/10.1016/s0167-9317(02)00474-4 
LibreCat: /record/8733
DOI: 10.1016/s0167-9317(02)00474-4

Schönstein, I., Müller, J., Hilleringmann, U., &; Goser, K. (2002). Characterization of submicron NMOS devices due to visible light emission. Microelectronic Engineering, 21(1–4), 363–366.https://doi.org/10.1016/0167-9317(93)90092-j 
LibreCat: /record/39912
DOI: 10.1016/0167-9317(93)90092-j

Hilleringmann, U., &; Goser, K. (2002). Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. Microelectronic Engineering, 19(1–4), 211–214.https://doi.org/10.1016/0167-9317(92)90425-q 
LibreCat: /record/39914
DOI: 10.1016/0167-9317(92)90425-q

Horstmann, J. T., Hilleringmann, U., &; Goser, K. (2002). Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique. Microelectronic Engineering, 30(1–4), 431–434.https://doi.org/10.1016/0167-9317(95)00280-4 
LibreCat: /record/39899
DOI: 10.1016/0167-9317(95)00280-4

Mankowski, V., Hilleringmann, U., &; Schumacher, K. (2002). A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV. Microelectronic Engineering, 53(1–4), 525–528.https://doi.org/10.1016/s0167-9317(00)00370-1 
LibreCat: /record/39882
DOI: 10.1016/s0167-9317(00)00370-1

Horstmann, J. T., Hilleringmann, U., &; Goser, K. (2002). 1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. Microelectronic Engineering, 53(1–4), 213–216.https://doi.org/10.1016/s0167-9317(00)00299-9 
LibreCat: /record/39879
DOI: 10.1016/s0167-9317(00)00299-9

Hilleringmann, U., Knospe, K., Heite, C., Schumacher, K., &; Goser, K. (2002). A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits. Microelectronic Engineering, 15(1–4), 289–292.https://doi.org/10.1016/0167-9317(91)90231-2 
LibreCat: /record/39919
DOI: 10.1016/0167-9317(91)90231-2

Soennecken, A., Hilleringmann, U., &; Goser, K. (2002). Floating gate structures as nonvolatile analog memory cells in 1.0;cm-LOCOS-CMOS technology with PZT dielectrica. Microelectronic Engineering, 15(1–4), 633–636.https://doi.org/10.1016/0167-9317(91)90299-s 
LibreCat: /record/39920
DOI: 10.1016/0167-9317(91)90299-s

Hilleringmann, U., &; Goser, K. (2002). Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. Microelectronic Engineering, 19(1–4), 211–214.https://doi.org/10.1016/0167-9317(92)90425-q 
LibreCat: /record/39915
DOI: 10.1016/0167-9317(92)90425-q

Adams, S., Hilleringmann, U., &; Goser, K. (2002). CMOS compatible micromachining by dry silicon-etching techniques. Microelectronic Engineering, 19(1–4), 191–194.https://doi.org/10.1016/0167-9317(92)90420-v 
LibreCat: /record/39916
DOI: 10.1016/0167-9317(92)90420-v

Mankowski, V., Hilleringmann, U., &; Schumacher, K. (2002). 12 kV low current cascaded light triggered switch on one silicon chip. Microelectronic Engineering, 46(1–4), 413–417.https://doi.org/10.1016/s0167-9317(99)00122-7 
LibreCat: /record/39889
DOI: 10.1016/s0167-9317(99)00122-7

Hilleringmann, U., Vieregge, T., &; Horstmann, J. T. (2002). A structure definition technique for 25 nm lines of silicon and related materials. Microelectronic Engineering, 53(1–4), 569–572.https://doi.org/10.1016/s0167-9317(00)00380-4 
LibreCat: /record/39877
DOI: 10.1016/s0167-9317(00)00380-4