Zolatanosha, Viktoryia, and Dirk Reuter. “Robust Si 3 N 4 Masks for 100 Nm Selective Area Epitaxy of GaAs-Based Nanostructures.”https://doi.org/10.1016/j.mee.2017.05.053__Microelectronic Engineering 180 (2017): 35–39.https://doi.org/10.1016/j.mee.2017.05.053 .
LibreCat: /record/7026
DOI: 10.1016/j.mee.2017.05.053

Meyers, Thorsten, Fábio F. Vidor, Katharina Brassat, Jörg Lindner, and Ulrich Hilleringmann. “Low-Voltage DNTT-Based Thin-Film Transistors and Inverters for Flexible Electronics.”https://doi.org/10.1016/j.mee.2016.12.018__Microelectronic Engineering 174 (2016): 35–39.https://doi.org/10.1016/j.mee.2016.12.018 .
LibreCat: /record/3956
DOI: 10.1016/j.mee.2016.12.018

Meyers, Thorsten, Fábio F. Vidor, Katharina Brassat, Jörg K.N. Lindner, and Ulrich Hilleringmann. “Low-Voltage DNTT-Based Thin-Film Transistors and Inverters for Flexible Electronics.”https://doi.org/10.1016/j.mee.2016.12.018__Microelectronic Engineering 174 (2016): 35–39.https://doi.org/10.1016/j.mee.2016.12.018 .
LibreCat: /record/39447
DOI: 10.1016/j.mee.2016.12.018

Vidor, Fábio F., Thorsten Meyers, Gilson I. Wirth, and Ulrich Hilleringmann. “ZnO Nanoparticle Thin-Film Transistors on Flexible Substrate Using Spray-Coating Technique.”https://doi.org/10.1016/j.mee.2016.02.059__Microelectronic Engineering 159 (2016): 155–58.https://doi.org/10.1016/j.mee.2016.02.059 .
LibreCat: /record/39466
DOI: 10.1016/j.mee.2016.02.059

Zankovych, S., I. Maximov, I. Shorubalko, J. Seekamp, M. Beck, S. Romanov, Dirk Reuter, et al. “Nanoimprint-Induced Effects on Electrical and Optical Properties of Quantum Well Structures.”https://doi.org/10.1016/s0167-9317(03)00074-1__Microelectronic Engineering, 2003, 214–20.https://doi.org/10.1016/s0167-9317(03)00074-1 .
LibreCat: /record/8728
DOI: 10.1016/s0167-9317(03)00074-1

Pannemann, Ch., T. Diekmann, and Ulrich Hilleringmann. “Nanometer Scale Organic Thin Film Transistors with Pentacene.”https://doi.org/10.1016/s0167-9317(03)00146-1__Microelectronic Engineering 67–68 (2003): 845–52.https://doi.org/10.1016/s0167-9317(03)00146-1 .
LibreCat: /record/39851
DOI: 10.1016/s0167-9317(03)00146-1

Kähler, D., U. Kunze, Dirk Reuter, and A.D. Wieck. “Quantum Wire Fabrication from Compensating-Layer GaAs–AlGaAs Heterostructures.”https://doi.org/10.1016/s0167-9317(02)00474-4__Microelectronic Engineering, 2002, 619–23.https://doi.org/10.1016/s0167-9317(02)00474-4 .
LibreCat: /record/8733
DOI: 10.1016/s0167-9317(02)00474-4

Schönstein, I., J. Müller, Ulrich Hilleringmann, and K. Goser. “Characterization of Submicron NMOS Devices Due to Visible Light Emission.”https://doi.org/10.1016/0167-9317(93)90092-j__Microelectronic Engineering 21, no. 1–4 (2002): 363–66.https://doi.org/10.1016/0167-9317(93)90092-j .
LibreCat: /record/39912
DOI: 10.1016/0167-9317(93)90092-j

Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.”https://doi.org/10.1016/0167-9317(92)90425-q__Microelectronic Engineering 19, no. 1–4 (2002): 211–14.https://doi.org/10.1016/0167-9317(92)90425-q .
LibreCat: /record/39914
DOI: 10.1016/0167-9317(92)90425-q

Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “Characterisation of Sub-100 Nm-MOS-Transistors Processed by Optical Lithography and a Sidewall-Etchback Technique.”https://doi.org/10.1016/0167-9317(95)00280-4__Microelectronic Engineering 30, no. 1–4 (2002): 431–34.https://doi.org/10.1016/0167-9317(95)00280-4 .
LibreCat: /record/39899
DOI: 10.1016/0167-9317(95)00280-4

Mankowski, V., Ulrich Hilleringmann, and K. Schumacher. “A Novel Insulation Technique for Smart Power Switching Devices and Very High Voltage ICs above 10 KV.”https://doi.org/10.1016/s0167-9317(00)00370-1__Microelectronic Engineering 53, no. 1–4 (2002): 525–28.https://doi.org/10.1016/s0167-9317(00)00370-1 .
LibreCat: /record/39882
DOI: 10.1016/s0167-9317(00)00370-1

Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “/f-Noise of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.”https://doi.org/10.1016/s0167-9317(00)00299-9__Microelectronic Engineering 53, no. 1–4 (2002): 213–16.https://doi.org/10.1016/s0167-9317(00)00299-9 .
LibreCat: /record/39879
DOI: 10.1016/s0167-9317(00)00299-9

Hilleringmann, Ulrich, K. Knospe, C. Heite, K. Schumacher, and K. Goser. “A Silicon Based Technology for Monolithic Integration of Waveguides and VLSI CMOS Circuits.”https://doi.org/10.1016/0167-9317(91)90231-2__Microelectronic Engineering 15, no. 1–4 (2002): 289–92.https://doi.org/10.1016/0167-9317(91)90231-2 .
LibreCat: /record/39919
DOI: 10.1016/0167-9317(91)90231-2

Soennecken, A., Ulrich Hilleringmann, and K. Goser. “Floating Gate Structures as Nonvolatile Analog Memory Cells in 1.0;cm-LOCOS-CMOS Technology with PZT Dielectrica.”https://doi.org/10.1016/0167-9317(91)90299-s__Microelectronic Engineering 15, no. 1–4 (2002): 633–36.https://doi.org/10.1016/0167-9317(91)90299-s .
LibreCat: /record/39920
DOI: 10.1016/0167-9317(91)90299-s

Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.”https://doi.org/10.1016/0167-9317(92)90425-q__Microelectronic Engineering 19, no. 1–4 (2002): 211–14.https://doi.org/10.1016/0167-9317(92)90425-q .
LibreCat: /record/39915
DOI: 10.1016/0167-9317(92)90425-q

Adams, S., Ulrich Hilleringmann, and K. Goser. “CMOS Compatible Micromachining by Dry Silicon-Etching Techniques.”https://doi.org/10.1016/0167-9317(92)90420-v__Microelectronic Engineering 19, no. 1–4 (2002): 191–94.https://doi.org/10.1016/0167-9317(92)90420-v .
LibreCat: /record/39916
DOI: 10.1016/0167-9317(92)90420-v

Mankowski, V., Ulrich Hilleringmann, and K. Schumacher. “KV Low Current Cascaded Light Triggered Switch on One Silicon Chip.”https://doi.org/10.1016/s0167-9317(99)00122-7__Microelectronic Engineering 46, no. 1–4 (2002): 413–17.https://doi.org/10.1016/s0167-9317(99)00122-7 .
LibreCat: /record/39889
DOI: 10.1016/s0167-9317(99)00122-7

Hilleringmann, Ulrich, T. Vieregge, and J.T. Horstmann. “A Structure Definition Technique for 25 Nm Lines of Silicon and Related Materials.”https://doi.org/10.1016/s0167-9317(00)00380-4__Microelectronic Engineering 53, no. 1–4 (2002): 569–72.https://doi.org/10.1016/s0167-9317(00)00380-4 .
LibreCat: /record/39877
DOI: 10.1016/s0167-9317(00)00380-4