Mankowski V, Hilleringmann U, Schumacher K. A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV. Microelectronic Engineering. 2002;53(1-4):525-528. doi:10.1016/s0167-9317(00)00370-1
LibreCat: /record/39882
DOI: 10.1016/s0167-9317(00)00370-1

Horstmann JT, Hilleringmann U, Goser K. 1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. Microelectronic Engineering. 2002;53(1-4):213-216. doi:10.1016/s0167-9317(00)00299-9
LibreCat: /record/39879
DOI: 10.1016/s0167-9317(00)00299-9

Hilleringmann U, Knospe K, Heite C, Schumacher K, Goser K. A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits. Microelectronic Engineering. 2002;15(1-4):289-292. doi:10.1016/0167-9317(91)90231-2
LibreCat: /record/39919
DOI: 10.1016/0167-9317(91)90231-2

Soennecken A, Hilleringmann U, Goser K. Floating gate structures as nonvolatile analog memory cells in 1.0;cm-LOCOS-CMOS technology with PZT dielectrica. Microelectronic Engineering. 2002;15(1-4):633-636. doi:10.1016/0167-9317(91)90299-s
LibreCat: /record/39920
DOI: 10.1016/0167-9317(91)90299-s

Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. Microelectronic Engineering. 2002;19(1-4):211-214. doi:10.1016/0167-9317(92)90425-q
LibreCat: /record/39915
DOI: 10.1016/0167-9317(92)90425-q

Adams S, Hilleringmann U, Goser K. CMOS compatible micromachining by dry silicon-etching techniques. Microelectronic Engineering. 2002;19(1-4):191-194. doi:10.1016/0167-9317(92)90420-v
LibreCat: /record/39916
DOI: 10.1016/0167-9317(92)90420-v

Mankowski V, Hilleringmann U, Schumacher K. 12 kV low current cascaded light triggered switch on one silicon chip. Microelectronic Engineering. 2002;46(1-4):413-417. doi:10.1016/s0167-9317(99)00122-7
LibreCat: /record/39889
DOI: 10.1016/s0167-9317(99)00122-7

Hilleringmann U, Vieregge T, Horstmann JT. A structure definition technique for 25 nm lines of silicon and related materials. Microelectronic Engineering. 2002;53(1-4):569-572. doi:10.1016/s0167-9317(00)00380-4
LibreCat: /record/39877
DOI: 10.1016/s0167-9317(00)00380-4