Mankowski, V., Hilleringmann, U., &; Schumacher, K. (2002). A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV. Microelectronic Engineering, 53(1–4), 525–528.https://doi.org/10.1016/s0167-9317(00)00370-1 
LibreCat: /record/39882
DOI: 10.1016/s0167-9317(00)00370-1

Horstmann, J. T., Hilleringmann, U., &; Goser, K. (2002). 1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. Microelectronic Engineering, 53(1–4), 213–216.https://doi.org/10.1016/s0167-9317(00)00299-9 
LibreCat: /record/39879
DOI: 10.1016/s0167-9317(00)00299-9

Hilleringmann, U., Knospe, K., Heite, C., Schumacher, K., &; Goser, K. (2002). A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits. Microelectronic Engineering, 15(1–4), 289–292.https://doi.org/10.1016/0167-9317(91)90231-2 
LibreCat: /record/39919
DOI: 10.1016/0167-9317(91)90231-2

Soennecken, A., Hilleringmann, U., &; Goser, K. (2002). Floating gate structures as nonvolatile analog memory cells in 1.0;cm-LOCOS-CMOS technology with PZT dielectrica. Microelectronic Engineering, 15(1–4), 633–636.https://doi.org/10.1016/0167-9317(91)90299-s 
LibreCat: /record/39920
DOI: 10.1016/0167-9317(91)90299-s

Hilleringmann, U., &; Goser, K. (2002). Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. Microelectronic Engineering, 19(1–4), 211–214.https://doi.org/10.1016/0167-9317(92)90425-q 
LibreCat: /record/39915
DOI: 10.1016/0167-9317(92)90425-q

Adams, S., Hilleringmann, U., &; Goser, K. (2002). CMOS compatible micromachining by dry silicon-etching techniques. Microelectronic Engineering, 19(1–4), 191–194.https://doi.org/10.1016/0167-9317(92)90420-v 
LibreCat: /record/39916
DOI: 10.1016/0167-9317(92)90420-v

Mankowski, V., Hilleringmann, U., &; Schumacher, K. (2002). 12 kV low current cascaded light triggered switch on one silicon chip. Microelectronic Engineering, 46(1–4), 413–417.https://doi.org/10.1016/s0167-9317(99)00122-7 
LibreCat: /record/39889
DOI: 10.1016/s0167-9317(99)00122-7

Hilleringmann, U., Vieregge, T., &; Horstmann, J. T. (2002). A structure definition technique for 25 nm lines of silicon and related materials. Microelectronic Engineering, 53(1–4), 569–572.https://doi.org/10.1016/s0167-9317(00)00380-4 
LibreCat: /record/39877
DOI: 10.1016/s0167-9317(00)00380-4