Preuss M, Schmidt WG, Seino K, Bechstedt F. Methylchloride adsorbed on Si(001): an ab initio study. Applied Surface Science. 2004;234:155-161. doi:10.1016/j.apsusc.2004.05.041

Fleischer K, Chandola S, Esser N, et al. Atomic indium nanowires on Si(111): the (4 × 1)–(8 × 2) phase transition studied with reflectance anisotropy spectroscopy. Applied Surface Science. 2004;234:302-306. doi:10.1016/j.apsusc.2004.05.114

Schmidt WG, Bechstedt F, Bernholc J. GaAs(001) surface reconstructions: geometries, chemical bonding and optical properties. Applied Surface Science. 2002;190:264-268. doi:10.1016/s0169-4332(01)00862-5

Hingerl K, Balderas-Navarro R., Bonanni A, Tichopadek P, Schmidt W. On the origin of resonance features in reflectance difference data of silicon. Applied Surface Science. 2002;175-176:769-776. doi:10.1016/s0169-4332(01)00114-3

Hingerl K, Balderas-Navarro R., Bonanni A, Tichopadek P, Schmidt WG. On the origin of resonance features in reflectance difference data of silicon. Applied Surface Science. 2001;175-176:769-776. doi:10.1016/s0169-4332(01)00114-3

Schmidt WG, Bernholc J, Bechstedt F. (001) Surfaces of GaP and InP: structural motifs, electronic states and optical signatures. Applied Surface Science. 2000;166:179-184. doi:10.1016/s0169-4332(00)00406-2

Frisch AM, Vogt P, Visbeck S, et al. Angle Resolved Photoemission Spectroscopy of the InP(001) surface. Applied Surface Science. 2000;166:224-230. doi:10.1016/s0169-4332(00)00431-1

Schmidt WG, Käckell P, Bechstedt F. In-induced (4 × 2) reconstructions of GaAs(001) surfaces. Applied Surface Science. 1998;123-124:136-140. doi:10.1016/s0169-4332(97)00510-2

Nilen RWN, Connell SH, Schmidt WG, et al. Electron-positron momentum density distribution in diamond. Applied Surface Science. 1997;116:330-334. doi:10.1016/s0169-4332(96)01078-1

Käckell P, Schmidt WG, Bechstedt F. Se-induced 3d core-level shifts of GaAs(110). Applied Surface Science. 1996;104-105:141-146. doi:10.1016/s0169-4332(96)00135-3