Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular magnetic fields
J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science and Technology (2020).

High-precision determination of silicon nanocrystals: optical spectroscopy versus electron microscopy
R. Köthemann, N. Weber, J.K.N. Lindner, C. Meier, Semiconductor Science and Technology 34 (2019).

Structural, electronic and phononic properties of PtSe2: from monolayer to bulk
A. Kandemir, B. Akbali, Z. Kahraman, S.V. Badalov, M. Ozcan, F. Iyikanat, H. Sahin, Semiconductor Science and Technology (2018).

Interlayer charge transfer in n-modulation doped Al1x Ga x As–GaAs single heterostructures
J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science and Technology 33 (2018).

Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures
J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science and Technology 28 (2013).

On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlxGxAs heterostructures
E.J. Koop, M.J. Iqbal, F. Limbach, M. Boute, B.J. van Wees, D. Reuter, A.D. Wieck, B.J. Kooi, C.H. van der Wal, Semiconductor Science and Technology 28 (2013).

In situ characterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy
V. Wiedemeier, G. Berth, A. Zrenner, E.M. Larramendi, U. Woggon, K. Lischka, D. Schikora, Semiconductor Science and Technology 26 (2011).

Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers
E.M. Larramendi, G. Berth, V. Wiedemeier, K.-P. Hüsch, A. Zrenner, U. Woggon, E. Tschumak, K. Lischka, D. Schikora, Semiconductor Science and Technology 25 (2010).

Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone resist calixarene
M. Knop, M. Richter, R. Maßmann, U. Wieser, U. Kunze, D. Reuter, C. Riedesel, A.D. Wieck, Semiconductor Science and Technology (2005) 814–818.

Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation
D. Kähler, M. Knop, U. Kunze, D. Reuter, A.D. Wieck, Semiconductor Science and Technology (2004) 140–143.

Influence of processing parameters on the transport properties of quantum point contacts fabricated with an atomic force microscope
G. Apetrii, S.F. Fischer, U. Kunze, D. Reuter, A.D. Wieck, Semiconductor Science and Technology (2003) 735–739.

Local two-dimensional electron gas formation in p-doped GaAs/InyG yAs/AlxG xAs heterostructures by focused Si-implantation doping
D. Reuter, C. Meier, C. Riedesel, A.D. Wieck, Semiconductor Science and Technology 17 (2002) 585–589.

Layer-compensated selectively doped AlxG-xAs/GaAs heterostructures as a base material for nanolithography
D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology (2002) 603–607.

Layer-compensated selectively doped AlxG-xAs/GaAs heterostructures as a base material for nanolithography
D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology (2002) 603–607.