@articleApetrii_Fischer_Kunze_Reuter_Wieck_2003, title=Influence of processing parameters on the transport properties of quantum point contacts fabricated with an atomic force microscope, DOI=10.1088/0268-1242/17/7/317, journal=Semiconductor Science and Technology, author=Apetrii, G and Fischer, S F and Kunze, U and Reuter, Dirk and Wieck, A D, year=2003, pages=735–739 
LibreCat: /record/8730
DOI: 10.1088/0268-1242/17/7/317

@articleReuter_Meier_Riedesel_Wieck_2002, title=Local two-dimensional electron gas formation in p-doped GaAs/InyG yAs/AlxG xAs heterostructures by focused Si-implantation doping, volume=17, DOI=10.1088/0268-1242/17/6/315, number=6, journal=Semiconductor Science and Technology, publisher=IOP Publishing, author=Reuter, D and Meier, Cedrik and Riedesel, C and Wieck, A D, year=2002, pages=585–589 
LibreCat: /record/7684
DOI: 10.1088/0268-1242/17/6/315

@articleReuter_Kähler_Kunze_Wieck_2002, title=Layer-compensated selectively doped AlxG-xAs/GaAs heterostructures as a base material for nanolithography, DOI=10.1088/0268-1242/16/7/314, journal=Semiconductor Science and Technology, author=Reuter, Dirk and Kähler, D and Kunze, U and Wieck, A D, year=2002, pages=603–607 
LibreCat: /record/8747
DOI: 10.1088/0268-1242/16/7/314

@articleReuter_Kähler_Kunze_Wieck_2002, title=Layer-compensated selectively doped AlxG-xAs/GaAs heterostructures as a base material for nanolithography, DOI=10.1088/0268-1242/16/7/314, journal=Semiconductor Science and Technology, author=Reuter, Dirk and Kähler, D and Kunze, U and Wieck, A D, year=2002, pages=603–607 
LibreCat: /record/8768
DOI: 10.1088/0268-1242/16/7/314