Apetrii G, Fischer SF, Kunze U, Reuter D, Wieck AD. Influence of processing parameters on the transport properties of quantum point contacts fabricated with an atomic force microscope. Semiconductor Science and Technology. 2003:735-739. doi:10.1088/0268-1242/17/7/317
LibreCat: /record/8730
DOI: 10.1088/0268-1242/17/7/317

Reuter D, Meier C, Riedesel C, Wieck AD. Local two-dimensional electron gas formation in p-doped GaAs/InyG yAs/AlxG xAs heterostructures by focused Si-implantation doping. Semiconductor Science and Technology. 2002;17(6):585-589. doi:10.1088/0268-1242/17/6/315
LibreCat: /record/7684
DOI: 10.1088/0268-1242/17/6/315

Reuter D, Kähler D, Kunze U, Wieck AD. Layer-compensated selectively doped AlxG-xAs/GaAs heterostructures as a base material for nanolithography. Semiconductor Science and Technology. 2002:603-607. doi:10.1088/0268-1242/16/7/314
LibreCat: /record/8747
DOI: 10.1088/0268-1242/16/7/314

Reuter D, Kähler D, Kunze U, Wieck AD. Layer-compensated selectively doped AlxG-xAs/GaAs heterostructures as a base material for nanolithography. Semiconductor Science and Technology. 2002:603-607. doi:10.1088/0268-1242/16/7/314
LibreCat: /record/8768
DOI: 10.1088/0268-1242/16/7/314