Schuster J, Kim TY, Batke E, Reuter D, Wieck AD. Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular magnetic fields. Semiconductor Science and Technology. 2020. doi:10.1088/1361-6641/ab89e1
LibreCat: /record/21796
DOI: 10.1088/1361-6641/ab89e1

Köthemann R, Weber N, Lindner JKN, Meier C. High-precision determination of silicon nanocrystals: optical spectroscopy versus electron microscopy. Semiconductor Science and Technology. 2019;34(9). doi:10.1088/1361-6641/ab3536
LibreCat: /record/12930
DOI: 10.1088/1361-6641/ab3536

Kandemir A, Akbali B, Kahraman Z, et al. Structural, electronic and phononic properties of PtSe2: from monolayer to bulk. Semiconductor Science and Technology. 2018. doi:10.1088/1361-6641/aacba2
LibreCat: /record/19215
DOI: 10.1088/1361-6641/aacba2

Schuster J, Kim TY, Batke E, Reuter D, Wieck AD. Interlayer charge transfer in n-modulation doped Al1x Ga x As–GaAs single heterostructures. Semiconductor Science and Technology. 2018;33(9). doi:10.1088/1361-6641/aad83d
LibreCat: /record/7009
DOI: 10.1088/1361-6641/aad83d

Schuster J, Kim TY, Batke E, Reuter D, Wieck AD. Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures. Semiconductor Science and Technology. 2013;28(8). doi:10.1088/0268-1242/28/8/085012
LibreCat: /record/7282
DOI: 10.1088/0268-1242/28/8/085012

Koop EJ, Iqbal MJ, Limbach F, et al. On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlxGxAs heterostructures. Semiconductor Science and Technology. 2013;28(2). doi:10.1088/0268-1242/28/2/025006
LibreCat: /record/7295
DOI: 10.1088/0268-1242/28/2/025006

Wiedemeier V, Berth G, Zrenner A, et al. In situ characterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy. Semiconductor Science and Technology. 2011;26(10). doi:10.1088/0268-1242/26/10/105023
LibreCat: /record/4545
DOI: 10.1088/0268-1242/26/10/105023

Larramendi EM, Berth G, Wiedemeier V, et al. Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers. Semiconductor Science and Technology. 2010;25(7). doi:10.1088/0268-1242/25/7/075003
LibreCat: /record/4549
DOI: 10.1088/0268-1242/25/7/075003

Knop M, Richter M, Maßmann R, et al. Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone resist calixarene. Semiconductor Science and Technology. 2005:814-818. doi:10.1088/0268-1242/20/8/031
LibreCat: /record/8693
DOI: 10.1088/0268-1242/20/8/031

Kähler D, Knop M, Kunze U, Reuter D, Wieck AD. Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation. Semiconductor Science and Technology. 2004:140-143. doi:10.1088/0268-1242/20/2/006
LibreCat: /record/8692
DOI: 10.1088/0268-1242/20/2/006

Apetrii G, Fischer SF, Kunze U, Reuter D, Wieck AD. Influence of processing parameters on the transport properties of quantum point contacts fabricated with an atomic force microscope. Semiconductor Science and Technology. 2003:735-739. doi:10.1088/0268-1242/17/7/317
LibreCat: /record/8730
DOI: 10.1088/0268-1242/17/7/317

Reuter D, Meier C, Riedesel C, Wieck AD. Local two-dimensional electron gas formation in p-doped GaAs/InyG yAs/AlxG xAs heterostructures by focused Si-implantation doping. Semiconductor Science and Technology. 2002;17(6):585-589. doi:10.1088/0268-1242/17/6/315
LibreCat: /record/7684
DOI: 10.1088/0268-1242/17/6/315

Reuter D, Kähler D, Kunze U, Wieck AD. Layer-compensated selectively doped AlxG-xAs/GaAs heterostructures as a base material for nanolithography. Semiconductor Science and Technology. 2002:603-607. doi:10.1088/0268-1242/16/7/314
LibreCat: /record/8747
DOI: 10.1088/0268-1242/16/7/314

Reuter D, Kähler D, Kunze U, Wieck AD. Layer-compensated selectively doped AlxG-xAs/GaAs heterostructures as a base material for nanolithography. Semiconductor Science and Technology. 2002:603-607. doi:10.1088/0268-1242/16/7/314
LibreCat: /record/8768
DOI: 10.1088/0268-1242/16/7/314