Schuster, J, T Y Kim, E Batke, Dirk Reuter, and A D Wieck. “Two-Dimensional Electron Bound Hole Photoluminescence in GaAs in Perpendicular Magnetic Fields.”https://doi.org/10.1088/1361-6641/ab89e1__Semiconductor Science and Technology, 2020.https://doi.org/10.1088/1361-6641/ab89e1 .
LibreCat: /record/21796
DOI: 10.1088/1361-6641/ab89e1

Köthemann, Ronja, Nils Weber, Jörg K N Lindner, and Cedrik Meier. “High-Precision Determination of Silicon Nanocrystals: Optical Spectroscopy versus Electron Microscopy.”https://doi.org/10.1088/1361-6641/ab3536__Semiconductor Science and Technology 34, no. 9 (2019).https://doi.org/10.1088/1361-6641/ab3536 .
LibreCat: /record/12930
DOI: 10.1088/1361-6641/ab3536

Kandemir, A, B Akbali, Z Kahraman, S V Badalov, M Ozcan, F Iyikanat, and H Sahin. “Structural, Electronic and Phononic Properties of PtSe2: From Monolayer to Bulk.”https://doi.org/10.1088/1361-6641/aacba2__Semiconductor Science and Technology, 2018.https://doi.org/10.1088/1361-6641/aacba2 .
LibreCat: /record/19215
DOI: 10.1088/1361-6641/aacba2

Schuster, J, T Y Kim, E Batke, Dirk Reuter, and A D Wieck. “Interlayer Charge Transfer in N-Modulation Doped Al1x Ga x As–GaAs Single Heterostructures.”https://doi.org/10.1088/1361-6641/aad83d__Semiconductor Science and Technology 33, no. 9 (2018).https://doi.org/10.1088/1361-6641/aad83d .
LibreCat: /record/7009
DOI: 10.1088/1361-6641/aad83d

Schuster, J, T Y Kim, E Batke, Dirk Reuter, and A D Wieck. “Influence of Recombination Center Interaction on the Photoluminescence of AlGaAs/GaAs Heterostructures.”https://doi.org/10.1088/0268-1242/28/8/085012__Semiconductor Science and Technology 28, no. 8 (2013).https://doi.org/10.1088/0268-1242/28/8/085012 .
LibreCat: /record/7282
DOI: 10.1088/0268-1242/28/8/085012

Koop, E J, M J Iqbal, F Limbach, M Boute, B J van Wees, Dirk Reuter, A D Wieck, B J Kooi, and C H van der Wal. “On the Annealing Mechanism of AuGe/Ni/Au Ohmic Contacts to a Two-Dimensional Electron Gas in GaAs/AlxGxAs Heterostructures.”https://doi.org/10.1088/0268-1242/28/2/025006__Semiconductor Science and Technology 28, no. 2 (2013).https://doi.org/10.1088/0268-1242/28/2/025006 .
LibreCat: /record/7295
DOI: 10.1088/0268-1242/28/2/025006

Wiedemeier, V, Gerhard Berth, Artur Zrenner, E M Larramendi, U Woggon, K Lischka, and D Schikora. “In Situ Characterization of ZnTe Epilayer Irradiation via Time-Resolved and Power-Density-Dependent Raman Spectroscopy.”https://doi.org/10.1088/0268-1242/26/10/105023__Semiconductor Science and Technology 26, no. 10 (2011).https://doi.org/10.1088/0268-1242/26/10/105023 .
LibreCat: /record/4545
DOI: 10.1088/0268-1242/26/10/105023

Larramendi, E M, Gerhard Berth, V Wiedemeier, K-P Hüsch, Artur Zrenner, U Woggon, E Tschumak, K Lischka, and D Schikora. “Intensity Enhancement of Te Raman Modes by Laser Damage in ZnTe Epilayers.”https://doi.org/10.1088/0268-1242/25/7/075003__Semiconductor Science and Technology 25, no. 7 (2010).https://doi.org/10.1088/0268-1242/25/7/075003 .
LibreCat: /record/4549
DOI: 10.1088/0268-1242/25/7/075003

Knop, M, M Richter, R Maßmann, U Wieser, U Kunze, Dirk Reuter, C Riedesel, and A D Wieck. “Preparation of Electron Waveguide Devices on GaAs/AlGaAs Using Negative-Tone Resist Calixarene.”https://doi.org/10.1088/0268-1242/20/8/031__Semiconductor Science and Technology, 2005, 814–18.https://doi.org/10.1088/0268-1242/20/8/031 .
LibreCat: /record/8693
DOI: 10.1088/0268-1242/20/8/031

Kähler, D, M Knop, U Kunze, Dirk Reuter, and A D Wieck. “Dual-Gate GaAs/AlGaAs Quantum Point Contact with Tuneable Subband Energy Separation.”https://doi.org/10.1088/0268-1242/20/2/006__Semiconductor Science and Technology, 2004, 140–43.https://doi.org/10.1088/0268-1242/20/2/006 .
LibreCat: /record/8692
DOI: 10.1088/0268-1242/20/2/006

Apetrii, G, S F Fischer, U Kunze, Dirk Reuter, and A D Wieck. “Influence of Processing Parameters on the Transport Properties of Quantum Point Contacts Fabricated with an Atomic Force Microscope.”https://doi.org/10.1088/0268-1242/17/7/317__Semiconductor Science and Technology, 2003, 735–39.https://doi.org/10.1088/0268-1242/17/7/317 .
LibreCat: /record/8730
DOI: 10.1088/0268-1242/17/7/317

Reuter, D, Cedrik Meier, C Riedesel, and A D Wieck. “Local Two-Dimensional Electron Gas Formation in p-Doped GaAs/InyG YAs/AlxG XAs Heterostructures by Focused Si-Implantation Doping.”https://doi.org/10.1088/0268-1242/17/6/315__Semiconductor Science and Technology 17, no. 6 (2002): 585–89.https://doi.org/10.1088/0268-1242/17/6/315 .
LibreCat: /record/7684
DOI: 10.1088/0268-1242/17/6/315

Reuter, Dirk, D Kähler, U Kunze, and A D Wieck. “Layer-Compensated Selectively Doped AlxG-XAs/GaAs Heterostructures as a Base Material for Nanolithography.”https://doi.org/10.1088/0268-1242/16/7/314__Semiconductor Science and Technology, 2002, 603–7.https://doi.org/10.1088/0268-1242/16/7/314 .
LibreCat: /record/8747
DOI: 10.1088/0268-1242/16/7/314

Reuter, Dirk, D Kähler, U Kunze, and A D Wieck. “Layer-Compensated Selectively Doped AlxG-XAs/GaAs Heterostructures as a Base Material for Nanolithography.”https://doi.org/10.1088/0268-1242/16/7/314__Semiconductor Science and Technology, 2002, 603–7.https://doi.org/10.1088/0268-1242/16/7/314 .
LibreCat: /record/8768
DOI: 10.1088/0268-1242/16/7/314