@articleSchuster_Kim_Batke_Reuter_Wieck_2020, title=Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular magnetic fields, DOI=10.1088/1361-6641/ab89e1, number=085011, journal=Semiconductor Science and Technology, author=Schuster, J and Kim, T Y and Batke, E and Reuter, Dirk and Wieck, A D, year=2020 
LibreCat: /record/21796
DOI: 10.1088/1361-6641/ab89e1

@articleKöthemann_Weber_Lindner_Meier_2019, title=High-precision determination of silicon nanocrystals: optical spectroscopy versus electron microscopy, volume=34, DOI=10.1088/1361-6641/ab3536, number=9095009, journal=Semiconductor Science and Technology, author=Köthemann, Ronja and Weber, Nils and Lindner, Jörg K N and Meier, Cedrik, year=2019 
LibreCat: /record/12930
DOI: 10.1088/1361-6641/ab3536

@articleKandemir_Akbali_Kahraman_Badalov_Ozcan_Iyikanat_Sahin_2018, title=Structural, electronic and phononic properties of PtSe2: from monolayer to bulk, DOI=10.1088/1361-6641/aacba2, number=085002, journal=Semiconductor Science and Technology, author=Kandemir, A and Akbali, B and Kahraman, Z and Badalov, S V and Ozcan, M and Iyikanat, F and Sahin, H, year=2018 
LibreCat: /record/19215
DOI: 10.1088/1361-6641/aacba2

@articleSchuster_Kim_Batke_Reuter_Wieck_2018, title=Interlayer charge transfer in n-modulation doped Al1x Ga x As–GaAs single heterostructures, volume=33, DOI=10.1088/1361-6641/aad83d, number=9095020, journal=Semiconductor Science and Technology, publisher=IOP Publishing, author=Schuster, J and Kim, T Y and Batke, E and Reuter, Dirk and Wieck, A D, year=2018 
LibreCat: /record/7009
DOI: 10.1088/1361-6641/aad83d

@articleSchuster_Kim_Batke_Reuter_Wieck_2013, title=Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures, volume=28, DOI=10.1088/0268-1242/28/8/085012, number=8085012, journal=Semiconductor Science and Technology, publisher=IOP Publishing, author=Schuster, J and Kim, T Y and Batke, E and Reuter, Dirk and Wieck, A D, year=2013 
LibreCat: /record/7282
DOI: 10.1088/0268-1242/28/8/085012

@articleKoop_Iqbal_Limbach_Boute_van Wees_Reuter_Wieck_Kooi_van der Wal_2013, title=On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlxGxAs heterostructures, volume=28, DOI=10.1088/0268-1242/28/2/025006, number=2025006, journal=Semiconductor Science and Technology, publisher=IOP Publishing, author=Koop, E J and Iqbal, M J and Limbach, F and Boute, M and van Wees, B J and Reuter, Dirk and Wieck, A D and Kooi, B J and van der Wal, C H, year=2013 
LibreCat: /record/7295
DOI: 10.1088/0268-1242/28/2/025006

@articleWiedemeier_Berth_Zrenner_Larramendi_Woggon_Lischka_Schikora_2011, title=In situ characterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy, volume=26, DOI=10.1088/0268-1242/26/10/105023, number=10105023, journal=Semiconductor Science and Technology, publisher=IOP Publishing, author=Wiedemeier, V and Berth, Gerhard and Zrenner, Artur and Larramendi, E M and Woggon, U and Lischka, K and Schikora, D, year=2011 
LibreCat: /record/4545
DOI: 10.1088/0268-1242/26/10/105023

@articleLarramendi_Berth_Wiedemeier_Hüsch_Zrenner_Woggon_Tschumak_Lischka_Schikora_2010, title=Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers, volume=25, DOI=10.1088/0268-1242/25/7/075003, number=7075003, journal=Semiconductor Science and Technology, publisher=IOP Publishing, author=Larramendi, E M and Berth, Gerhard and Wiedemeier, V and Hüsch, K-P and Zrenner, Artur and Woggon, U and Tschumak, E and Lischka, K and Schikora, D, year=2010 
LibreCat: /record/4549
DOI: 10.1088/0268-1242/25/7/075003

@articleKnop_Richter_Maßmann_Wieser_Kunze_Reuter_Riedesel_Wieck_2005, title=Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone resist calixarene, DOI=10.1088/0268-1242/20/8/031, journal=Semiconductor Science and Technology, author=Knop, M and Richter, M and Maßmann, R and Wieser, U and Kunze, U and Reuter, Dirk and Riedesel, C and Wieck, A D, year=2005, pages=814–818 
LibreCat: /record/8693
DOI: 10.1088/0268-1242/20/8/031

@articleKähler_Knop_Kunze_Reuter_Wieck_2004, title=Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation, DOI=10.1088/0268-1242/20/2/006, journal=Semiconductor Science and Technology, author=Kähler, D and Knop, M and Kunze, U and Reuter, Dirk and Wieck, A D, year=2004, pages=140–143 
LibreCat: /record/8692
DOI: 10.1088/0268-1242/20/2/006

@articleApetrii_Fischer_Kunze_Reuter_Wieck_2003, title=Influence of processing parameters on the transport properties of quantum point contacts fabricated with an atomic force microscope, DOI=10.1088/0268-1242/17/7/317, journal=Semiconductor Science and Technology, author=Apetrii, G and Fischer, S F and Kunze, U and Reuter, Dirk and Wieck, A D, year=2003, pages=735–739 
LibreCat: /record/8730
DOI: 10.1088/0268-1242/17/7/317

@articleReuter_Meier_Riedesel_Wieck_2002, title=Local two-dimensional electron gas formation in p-doped GaAs/InyG yAs/AlxG xAs heterostructures by focused Si-implantation doping, volume=17, DOI=10.1088/0268-1242/17/6/315, number=6, journal=Semiconductor Science and Technology, publisher=IOP Publishing, author=Reuter, D and Meier, Cedrik and Riedesel, C and Wieck, A D, year=2002, pages=585–589 
LibreCat: /record/7684
DOI: 10.1088/0268-1242/17/6/315

@articleReuter_Kähler_Kunze_Wieck_2002, title=Layer-compensated selectively doped AlxG-xAs/GaAs heterostructures as a base material for nanolithography, DOI=10.1088/0268-1242/16/7/314, journal=Semiconductor Science and Technology, author=Reuter, Dirk and Kähler, D and Kunze, U and Wieck, A D, year=2002, pages=603–607 
LibreCat: /record/8747
DOI: 10.1088/0268-1242/16/7/314

@articleReuter_Kähler_Kunze_Wieck_2002, title=Layer-compensated selectively doped AlxG-xAs/GaAs heterostructures as a base material for nanolithography, DOI=10.1088/0268-1242/16/7/314, journal=Semiconductor Science and Technology, author=Reuter, Dirk and Kähler, D and Kunze, U and Wieck, A D, year=2002, pages=603–607 
LibreCat: /record/8768
DOI: 10.1088/0268-1242/16/7/314