Schuster, J., Kim, T. Y., Batke, E., Reuter, D., &; Wieck, A. D. (2020). Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular magnetic fields. Semiconductor Science and Technology.https://doi.org/10.1088/1361-6641/ab89e1 
LibreCat: /record/21796
DOI: 10.1088/1361-6641/ab89e1

Köthemann, R., Weber, N., Lindner, J. K. N., &; Meier, C. (2019). High-precision determination of silicon nanocrystals: optical spectroscopy versus electron microscopy. Semiconductor Science and Technology, 34(9).https://doi.org/10.1088/1361-6641/ab3536 
LibreCat: /record/12930
DOI: 10.1088/1361-6641/ab3536

Kandemir, A., Akbali, B., Kahraman, Z., Badalov, S. V., Ozcan, M., Iyikanat, F., &; Sahin, H. (2018). Structural, electronic and phononic properties of PtSe2: from monolayer to bulk. Semiconductor Science and Technology.https://doi.org/10.1088/1361-6641/aacba2 
LibreCat: /record/19215
DOI: 10.1088/1361-6641/aacba2

Schuster, J., Kim, T. Y., Batke, E., Reuter, D., &; Wieck, A. D. (2018). Interlayer charge transfer in n-modulation doped Al1x Ga x As–GaAs single heterostructures. Semiconductor Science and Technology, 33(9).https://doi.org/10.1088/1361-6641/aad83d 
LibreCat: /record/7009
DOI: 10.1088/1361-6641/aad83d

Schuster, J., Kim, T. Y., Batke, E., Reuter, D., &; Wieck, A. D. (2013). Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures. Semiconductor Science and Technology, 28(8).https://doi.org/10.1088/0268-1242/28/8/085012 
LibreCat: /record/7282
DOI: 10.1088/0268-1242/28/8/085012

Koop, E. J., Iqbal, M. J., Limbach, F., Boute, M., van Wees, B. J., Reuter, D.,https://doi.org/10.1088/0268-1242/28/2/025006__van der Wal, C. H. (2013). On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlxGxAs heterostructures. Semiconductor Science and Technology, 28(2).https://doi.org/10.1088/0268-1242/28/2/025006 
LibreCat: /record/7295
DOI: 10.1088/0268-1242/28/2/025006

Wiedemeier, V., Berth, G., Zrenner, A., Larramendi, E. M., Woggon, U., Lischka, K., &; Schikora, D. (2011). In situ characterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy. Semiconductor Science and Technology, 26(10).https://doi.org/10.1088/0268-1242/26/10/105023 
LibreCat: /record/4545
DOI: 10.1088/0268-1242/26/10/105023

Larramendi, E. M., Berth, G., Wiedemeier, V., Hüsch, K.-P., Zrenner, A., Woggon, U.,https://doi.org/10.1088/0268-1242/25/7/075003__Schikora, D. (2010). Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers. Semiconductor Science and Technology, 25(7).https://doi.org/10.1088/0268-1242/25/7/075003 
LibreCat: /record/4549
DOI: 10.1088/0268-1242/25/7/075003

Knop, M., Richter, M., Maßmann, R., Wieser, U., Kunze, U., Reuter, D.,https://doi.org/10.1088/0268-1242/20/8/031__Wieck, A. D. (2005). Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone resist calixarene. Semiconductor Science and Technology, 814–818.https://doi.org/10.1088/0268-1242/20/8/031 
LibreCat: /record/8693
DOI: 10.1088/0268-1242/20/8/031

Kähler, D., Knop, M., Kunze, U., Reuter, D., &; Wieck, A. D. (2004). Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation. Semiconductor Science and Technology, 140–143.https://doi.org/10.1088/0268-1242/20/2/006 
LibreCat: /record/8692
DOI: 10.1088/0268-1242/20/2/006

Apetrii, G., Fischer, S. F., Kunze, U., Reuter, D., &; Wieck, A. D. (2003). Influence of processing parameters on the transport properties of quantum point contacts fabricated with an atomic force microscope. Semiconductor Science and Technology, 735–739.https://doi.org/10.1088/0268-1242/17/7/317 
LibreCat: /record/8730
DOI: 10.1088/0268-1242/17/7/317

Reuter, D., Meier, C., Riedesel, C., &; Wieck, A. D. (2002). Local two-dimensional electron gas formation in p-doped GaAs/InyG yAs/AlxG xAs heterostructures by focused Si-implantation doping. Semiconductor Science and Technology, 17(6), 585–589.https://doi.org/10.1088/0268-1242/17/6/315 
LibreCat: /record/7684
DOI: 10.1088/0268-1242/17/6/315

Reuter, D., Kähler, D., Kunze, U., &; Wieck, A. D. (2002). Layer-compensated selectively doped AlxG-xAs/GaAs heterostructures as a base material for nanolithography. Semiconductor Science and Technology, 603–607.https://doi.org/10.1088/0268-1242/16/7/314 
LibreCat: /record/8747
DOI: 10.1088/0268-1242/16/7/314

Reuter, D., Kähler, D., Kunze, U., &; Wieck, A. D. (2002). Layer-compensated selectively doped AlxG-xAs/GaAs heterostructures as a base material for nanolithography. Semiconductor Science and Technology, 603–607.https://doi.org/10.1088/0268-1242/16/7/314 
LibreCat: /record/8768
DOI: 10.1088/0268-1242/16/7/314