J. Schuster, T. Y. Kim, E. Batke, D. Reuter, and A. D. Wieck, “Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular magnetic fields,” Semiconductor Science and Technology, 2020.
LibreCat: /record/21796
DOI: 10.1088/1361-6641/ab89e1

R. Köthemann, N. Weber, J. K. N. Lindner, and C. Meier, “High-precision determination of silicon nanocrystals: optical spectroscopy versus electron microscopy,” Semiconductor Science and Technology, vol. 34, no. 9, 2019.
LibreCat: /record/12930
DOI: 10.1088/1361-6641/ab3536

A. Kandemir et al., “Structural, electronic and phononic properties of PtSe2: from monolayer to bulk,” Semiconductor Science and Technology, 2018.
LibreCat: /record/19215
DOI: 10.1088/1361-6641/aacba2

J. Schuster, T. Y. Kim, E. Batke, D. Reuter, and A. D. Wieck, “Interlayer charge transfer in n-modulation doped Al1x Ga x As–GaAs single heterostructures,” Semiconductor Science and Technology, vol. 33, no. 9, 2018.
LibreCat: /record/7009
DOI: 10.1088/1361-6641/aad83d

J. Schuster, T. Y. Kim, E. Batke, D. Reuter, and A. D. Wieck, “Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures,” Semiconductor Science and Technology, vol. 28, no. 8, 2013.
LibreCat: /record/7282
DOI: 10.1088/0268-1242/28/8/085012

E. J. Koop et al., “On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlxGxAs heterostructures,” Semiconductor Science and Technology, vol. 28, no. 2, 2013.
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DOI: 10.1088/0268-1242/28/2/025006

V. Wiedemeier et al., “In situ characterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy,” Semiconductor Science and Technology, vol. 26, no. 10, 2011.
LibreCat: /record/4545
DOI: 10.1088/0268-1242/26/10/105023

E. M. Larramendi et al., “Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers,” Semiconductor Science and Technology, vol. 25, no. 7, 2010.
LibreCat: /record/4549
DOI: 10.1088/0268-1242/25/7/075003

M. Knop et al., “Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone resist calixarene,” Semiconductor Science and Technology, pp. 814–818, 2005.
LibreCat: /record/8693
DOI: 10.1088/0268-1242/20/8/031

D. Kähler, M. Knop, U. Kunze, D. Reuter, and A. D. Wieck, “Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation,” Semiconductor Science and Technology, pp. 140–143, 2004.
LibreCat: /record/8692
DOI: 10.1088/0268-1242/20/2/006

G. Apetrii, S. F. Fischer, U. Kunze, D. Reuter, and A. D. Wieck, “Influence of processing parameters on the transport properties of quantum point contacts fabricated with an atomic force microscope,” Semiconductor Science and Technology, pp. 735–739, 2003.
LibreCat: /record/8730
DOI: 10.1088/0268-1242/17/7/317

D. Reuter, C. Meier, C. Riedesel, and A. D. Wieck, “Local two-dimensional electron gas formation in p-doped GaAs/InyG yAs/AlxG xAs heterostructures by focused Si-implantation doping,” Semiconductor Science and Technology, vol. 17, no. 6, pp. 585–589, 2002.
LibreCat: /record/7684
DOI: 10.1088/0268-1242/17/6/315

D. Reuter, D. Kähler, U. Kunze, and A. D. Wieck, “Layer-compensated selectively doped AlxG-xAs/GaAs heterostructures as a base material for nanolithography,” Semiconductor Science and Technology, pp. 603–607, 2002.
LibreCat: /record/8747
DOI: 10.1088/0268-1242/16/7/314

D. Reuter, D. Kähler, U. Kunze, and A. D. Wieck, “Layer-compensated selectively doped AlxG-xAs/GaAs heterostructures as a base material for nanolithography,” Semiconductor Science and Technology, pp. 603–607, 2002.
LibreCat: /record/8768
DOI: 10.1088/0268-1242/16/7/314