Pfau, T., &; Noé, R. (2010). Phase-Noise-Tolerant Two-Stage Carrier Recovery Concept for Higher Order QAM Formats. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 16(5), 1210–1216.https://doi.org/10.1109/JSTQE.2009.2034472 

Noé, R., Pfau, T., El-Darawy, M., &; Hoffmann, S. (2010). Electronic Polarization Control Algorithms for Coherent Optical Transmission. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 16(5), 1193–1200.https://doi.org/10.1109/JSTQE.2009.2039920 

Noé, R., Pfau, T., El-Darawy, M., &; Hoffmann, S. (2010). Electronic Polarization Control Algorithms for Coherent Optical Transmission. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 16(5), 1193–1200.https://doi.org/10.1109/JSTQE.2009.2039920 

Koch, B., Mirvoda, V., Griesser, H., Wernz, H., Sandel, D., &; Noé, R. (2010). Endless Optical Polarization Control at 56 krad/s, Over 50 Gigaradian, and Demultiplex of 112-Gb/s PDM-RZ-DQPSK Signals at 3.5 krad/s. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 16(5), 1158–1163.https://doi.org/10.1109/JSTQE.2010.2042033 

Ibrahim, S. K., Bhandare, S., &; Noé, R. (2006). Performance of 20 Gb/s quaternary intensity modulation based on binary or duobinary modulation in two quadratures with unequal amplitudes. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 12(4), 596–602.https://doi.org/10.1109/JSTQE.2006.876318 

Bhandare, S., Ibrahim, S., Sandel, D., Zhang, H., Wust, F., &; Noé, R. (2005). Novel nonmagnetic 30-dB traveling-wave single-sideband optical isolator integrated in III/V material. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 11(2), 417–421.https://doi.org/10.1109/JSTQE.2005.845620 

Noé, R., Sandel, D., &; Mirvoda, V. (2004). PMD in high-bit-rate transmission and means for its mitigation. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 10(2), 341–355.https://doi.org/10.1109/JSTQE.2004.827842 

Noé, R., Sandel, D., &; Mirvoda, V. (2004). PMD in high-bit-rate transmission and means for its mitigation. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 10(2), 341–355.https://doi.org/10.1109/JSTQE.2004.827842