Meier C, Hennessy K. Technique for tilting GaAs photonic crystal nanocavities out of plane. Applied Physics Letters. 2007;90(14). doi:10.1063/1.2719612

Lo F-Y, Melnikov A, Reuter D, et al. Magnetic and structural properties of Gd-implanted zinc-blende GaN. Applied Physics Letters. 2007. doi:10.1063/1.2753113

Mehta M, Reuter D, Melnikov A, Wieck AD, Remhof A. Focused ion beam implantation induced site-selective growth of InAs quantum dots. Applied Physics Letters. 2007. doi:10.1063/1.2786836

Waitz T, Tiemann M, Klar PJ, Sann J, Stehr J, Meyer BK. Crystalline ZnO with an enhanced surface area obtained by nanocasting. Applied Physics Letters. Published online 2007. doi:10.1063/1.2713872

Scharnberg M, Zaporojtchenko V, Adelung R, et al. Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer. Applied Physics Letters. 2007;90(1). doi:10.1063/1.2426926

Meier C, Hennessy K, Haberer ED, et al. Visible resonant modes in GaN-based photonic crystal membrane cavities. Applied Physics Letters. 2006;88(3). doi:10.1063/1.2166680

Knop M, Wieser U, Kunze U, Reuter D, Wieck AD. Ballistic rectification in an asymmetric mesoscopic cross junction. Applied Physics Letters. 2006. doi:10.1063/1.2179618

Schmidt R, Scholz U, Vitzethum M, et al. Fabrication of genuine single-quantum-dot light-emitting diodes. Applied Physics Letters. 2006. doi:10.1063/1.2188057

Stavarache V, Reuter D, Wieck AD, et al. Control of quantum dot excitons by lateral electric fields. Applied Physics Letters. 2006. doi:10.1063/1.2345233

Hohage PE, Bacher G, Reuter D, Wieck AD. Coherent spin oscillations in bulk GaAs at room temperature. Applied Physics Letters. 2006. doi:10.1063/1.2398909

Thomas A, Meyners D, Ebke D, et al. Inverted spin polarization of Heusler alloys for spintronic devices. Applied Physics Letters. 2006;89(1). doi:10.1063/1.2219333

Choi Y-S, Hennessy K, Sharma R, et al. GaN blue photonic crystal membrane nanocavities. Applied Physics Letters. 2005;87(24). doi:10.1063/1.2147713

Lüttjohann S, Meier C, Lorke A, Reuter D, Wieck AD. Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra. Applied Physics Letters. 2005;87(16). doi:10.1063/1.2112192

David A, Meier C, Sharma R, et al. Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction. Applied Physics Letters. 2005;87(10). doi:10.1063/1.2039987

Sharma R, Haberer ED, Meier C, Hu EL, Nakamura S. Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching. Applied Physics Letters. 2005;87(5). doi:10.1063/1.2008380

Chakraborty A, Keller S, Meier C, et al. Properties of nonpolar a-plane InGaNGaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN. Applied Physics Letters. 2005;86(3). doi:10.1063/1.1851007

Reuter D, Werner C, Wieck AD, Petrosyan S. Depletion characteristics of two-dimensional lateral pn-junctions. Applied Physics Letters. 2005. doi:10.1063/1.1897829

Müller T, Würtz A, Lorke A, Reuter D, Wieck AD. Wave-form sampling using a driven electron ratchet in a two-dimensional electron system. Applied Physics Letters. 2005. doi:10.1063/1.2001740

Gerhardt NC, Hövel S, Brenner C, et al. Electron spin injection into GaAs from ferromagnetic contacts in remanence. Applied Physics Letters. 2005. doi:10.1063/1.1996843

Lüttjohann S, Meier C, Lorke A, Reuter D, Wieck AD. Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra. Applied Physics Letters. 2005. doi:10.1063/1.2112192