W. G. Schmidt, S. Mirbt, and F. Bechstedt, “Surface phase diagram of (2×4) and (4×2) reconstructions of GaAs(001),” Physical Review B, vol. 62, no. 12, pp. 8087–8091, 2000.

W. G. Schmidt et al., “Understanding reflectance anisotropy: Surface-state signatures and bulk-related features in the optical spectrum ofInP(001)(2×4),” Physical Review B, vol. 61, pp. 335–338, 2000.

W. G. Schmidt and J. Bernholc, “Step-induced optical anisotropy of Si(111):H surfaces,” Physical Review B, vol. 61, no. 11, pp. 7604–7608, 2000.

A. M. Frisch, W. G. Schmidt, J. Bernholc, M. Pristovsek, N. Esser, and W. Richter, “(2×4)GaP(001) surface: Atomic structure and optical anisotropy,” Physical Review B, vol. 60, no. 4, pp. 2488–2494, 1999.

W. G. Schmidt, E. L. Briggs, J. Bernholc, and F. Bechstedt, “Structural fingerprints in the reflectance anisotropy spectra ofInP(001)(2×4)surfaces,” Physical Review B, vol. 59, no. 3, pp. 2234–2239, 1999.

W. G. Schmidt, F. Bechstedt, N. Esser, M. Pristovsek, C. Schultz, and W. Richter, “Atomic structure of InP(001)-(2×4): A dimer reconstruction,” Physical Review B, vol. 57, no. 23, pp. 14596–14599, 1998.

U. Grossner, W. G. Schmidt, and F. Bechstedt, “As on InP(110) studied within density-functional theory,” Physical Review B, vol. 56, no. 11, pp. 6719–6726, 1997.

W. G. Schmidt and F. Bechstedt, “Antimony-stabilized GaAs(001)(2×4) reconstructions,” Physical Review B, vol. 55, no. 19, pp. 13051–13057, 1997.

W. G. Schmidt and F. Bechstedt, “Geometry and electronic structure of GaAs(001)(2×4) reconstructions,” Physical Review B, vol. 54, no. 23, pp. 16742–16748, 1996.

A. Scholze, W. G. Schmidt, and F. Bechstedt, “Structure of the diamond (111) surface: Single-dangling-bond versus triple-dangling-bond face,” Physical Review B, vol. 53, no. 20, pp. 13725–13733, 1996.

P. V. Santos, N. Esser, J. Groenen, M. Cardona, W. G. Schmidt, and F. Bechstedt, “Hydrogen interaction with Sb-terminated GaAs and InP (110) surfaces,” Physical Review B, vol. 52, no. 24, pp. 17379–17385, 1995.

P. V. Santos, N. Esser, M. Cardona, W. G. Schmidt, and F. Bechstedt, “Optical properties of Sb-terminated GaAs and InP (110) surfaces,” Physical Review B, vol. 52, no. 16, pp. 12158–12167, 1995.

W. G. Schmidt, F. Bechstedt, and G. P. Srivastava, “III-V(110) surface dynamics from anab initiofrozen-phonon approach,” Physical Review B, vol. 52, no. 3, pp. 2001–2007, 1995.

C. Kress, M. Fiedler, W. G. Schmidt, and F. Bechstedt, “Geometrical and electronic structure of the reconstructed diamond (100) surface,” Physical Review B, vol. 50, no. 23, pp. 17697–17700, 1995.

W. G. Schmidt and F. Bechstedt, “Exchange reactions versus adsorption geometries for Se/GaAs(110),” Physical Review B, vol. 50, no. 23, pp. 17651–17654, 1995.

W. G. Schmidt and F. Bechstedt, “Se/GaAs(110): Atomic and electronic structure,” Physical Review B, vol. 50, no. 23, pp. 17280–17291, 1995.

W. G. Schmidt, B. Wenzien, and F. Bechstedt, “Chemisorption of antimony on GaAs(110),” Physical Review B, vol. 49, no. 7, pp. 4731–4744, 1994.