Schuster J, Kim TY, Batke E, Reuter D, Wieck AD. Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular magnetic fields. Semiconductor Science and Technology. 2020. doi:10.1088/1361-6641/ab89e1
LibreCat: /record/21796
DOI: 10.1088/1361-6641/ab89e1

Köthemann R, Weber N, Lindner JKN, Meier C. High-precision determination of silicon nanocrystals: optical spectroscopy versus electron microscopy. Semiconductor Science and Technology. 2019;34(9). doi:10.1088/1361-6641/ab3536
LibreCat: /record/12930
DOI: 10.1088/1361-6641/ab3536

Kandemir A, Akbali B, Kahraman Z, et al. Structural, electronic and phononic properties of PtSe2: from monolayer to bulk. Semiconductor Science and Technology. 2018. doi:10.1088/1361-6641/aacba2
LibreCat: /record/19215
DOI: 10.1088/1361-6641/aacba2

Schuster J, Kim TY, Batke E, Reuter D, Wieck AD. Interlayer charge transfer in n-modulation doped Al1x Ga x As–GaAs single heterostructures. Semiconductor Science and Technology. 2018;33(9). doi:10.1088/1361-6641/aad83d
LibreCat: /record/7009
DOI: 10.1088/1361-6641/aad83d

Schuster J, Kim TY, Batke E, Reuter D, Wieck AD. Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures. Semiconductor Science and Technology. 2013;28(8). doi:10.1088/0268-1242/28/8/085012
LibreCat: /record/7282
DOI: 10.1088/0268-1242/28/8/085012

Koop EJ, Iqbal MJ, Limbach F, et al. On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlxGxAs heterostructures. Semiconductor Science and Technology. 2013;28(2). doi:10.1088/0268-1242/28/2/025006
LibreCat: /record/7295
DOI: 10.1088/0268-1242/28/2/025006

Wiedemeier V, Berth G, Zrenner A, et al. In situ characterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy. Semiconductor Science and Technology. 2011;26(10). doi:10.1088/0268-1242/26/10/105023
LibreCat: /record/4545
DOI: 10.1088/0268-1242/26/10/105023

Larramendi EM, Berth G, Wiedemeier V, et al. Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers. Semiconductor Science and Technology. 2010;25(7). doi:10.1088/0268-1242/25/7/075003
LibreCat: /record/4549
DOI: 10.1088/0268-1242/25/7/075003

Knop M, Richter M, Maßmann R, et al. Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone resist calixarene. Semiconductor Science and Technology. 2005:814-818. doi:10.1088/0268-1242/20/8/031
LibreCat: /record/8693
DOI: 10.1088/0268-1242/20/8/031

Kähler D, Knop M, Kunze U, Reuter D, Wieck AD. Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation. Semiconductor Science and Technology. 2004:140-143. doi:10.1088/0268-1242/20/2/006
LibreCat: /record/8692
DOI: 10.1088/0268-1242/20/2/006

Reuter D, Kähler D, Kunze U, Wieck AD. Layer-compensated selectively doped AlxG-xAs/GaAs heterostructures as a base material for nanolithography. Semiconductor Science and Technology. 2002:603-607. doi:10.1088/0268-1242/16/7/314
LibreCat: /record/8747
DOI: 10.1088/0268-1242/16/7/314

Reuter D, Kähler D, Kunze U, Wieck AD. Layer-compensated selectively doped AlxG-xAs/GaAs heterostructures as a base material for nanolithography. Semiconductor Science and Technology. 2002:603-607. doi:10.1088/0268-1242/16/7/314
LibreCat: /record/8768
DOI: 10.1088/0268-1242/16/7/314