Littmann M, Reuter D, As DJ. Remote Epitaxy of Cubic Gallium Nitride on GrapheneCovered 3CSiC Substrates by PlasmaAssisted Molecular Beam Epitaxy. physica status solidi (b). 2023;260(7). doi:10.1002/pssb.202300034
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DOI: 10.1002/pssb.202300034

Meier F, Littmann M, Bürger J, et al. Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks. physica status solidi (b). Published online 2022. doi:10.1002/pssb.202200508
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DOI: 10.1002/pssb.202200508

Glahn LJ, Ruiz Alvarado IA, Neufeld S, et al. Clean and HydrogenAdsorbed AlInP(001) Surfaces: Structures and Electronic Properties. physica status solidi (b). 2022;259(11). doi:10.1002/pssb.202200308
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DOI: 10.1002/pssb.202200308

Meier L, Schmidt WG. GaInP/AlInP(001) Interfaces from Density Functional Theory. physica status solidi (b). 2021;259(1). doi:10.1002/pssb.202100462
LibreCat: /record/40244
DOI: 10.1002/pssb.202100462

Baron E, Goldhahn R, Deppe M, As DJ, Feneberg M. Photoluminescence LineShape Analysis of Highly nType Doped Zincblende GaN. physica status solidi (b). 2020. doi:10.1002/pssb.201900522
LibreCat: /record/23840
DOI: 10.1002/pssb.201900522

Deppe M, Henksmeier T, Gerlach JW, Reuter D, As DJ. Molecular Beam Epitaxy Growth and Characterization of GermaniumDoped Cubic Al                          x                        Ga            1                          x                        N. physica status solidi (b). 2020. doi:10.1002/pssb.201900532
LibreCat: /record/23841
DOI: 10.1002/pssb.201900532

Meier L, Braun C, Hannappel T, Schmidt WG. Band Alignment at Ga            <sub>              x            </sub>            In            <sub>              1–              x            </sub>            P/Al            <sub>              y            </sub>            In            <sub>              1–              y            </sub>            P Alloy Interfaces from Hybrid Density Functional Theory Calculations. physica status solidi (b). 2020;258(2). doi:10.1002/pssb.202000463
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DOI: 10.1002/pssb.202000463

Deppe M, Henksmeier T, Gerlach JW, Reuter D, As DJ. Molecular Beam Epitaxy Growth and Characterization of GermaniumDoped Cubic Al                          x                        Ga            1                          x                        N. physica status solidi (b). Published online 2019. doi:10.1002/pssb.201900532
LibreCat: /record/15444
DOI: 10.1002/pssb.201900532

Esser N, Schmidt WG. Electric Field Induced Raman Scattering at the Sb–InP(110) Interface: The Surface Dipole Contribution. physica status solidi (b). 2018;(256). doi:10.1002/pssb.201800314
LibreCat: /record/17065
DOI: 10.1002/pssb.201800314

Häberlen M, Zhu D, McAleese C, Zhu T, Kappers MJ, Humphreys CJ. Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer. physica status solidi (b). 2010;247(7):1753-1756. doi:10.1002/pssb.200983537
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DOI: 10.1002/pssb.200983537