Full-Swing, High-Gain Inverters Based on ZnSnO JFETs and MESFETs
O. Lahr, Z. Zhang, F. Grotjahn, P. Schlupp, S. Vogt, H. von Wenckstern, A. Thiede, M. Grundmann, IEEE Transactions on Electron Devices 66 (2019) 3376–3381.