Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers
M. Häberlen, D. Zhu, C. McAleese, M.J. Kappers, C.J. Humphreys, Journal of Physics: Conference Series 209 (2010).

Lateral electron tunnelling spectroscopy in etched GaAs/AlGaAs-based nanostructures
S.F. Fischer, J.L. Deborde, U. Kunze, D. Reuter, A.D. Wieck, Journal of Physics: Conference Series (2009).

Lateral electron tunnelling spectroscopy in etched GaAs/AlGaAs-based nanostructures
S.F. Fischer, J.L. Deborde, U. Kunze, D. Reuter, A.D. Wieck, Journal of Physics: Conference Series (2009).