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Bürger M, Lindner J, Reuter D, As DJ. Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process. physica status solidi (c). 2015;12(4-5):452-455. doi:10.1002/pssc.201400132
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Kemper RM, Veit P, Mietze C, et al. STEM-CL investigations on the influence of stacking faults on the optical emission of cubic GaN epilayers and cubic GaN/AlN multi-quantum wells. physica status solidi (c). 2015;12(4-5):469-472. doi:10.1002/pssc.201400154
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Bürger M, Callsen G, Kure T, et al. Non-polar GaN quantum dots integrated into high quality cubic AlN microdisks. physica status solidi (c). 2014;11(3-4):790-793. doi:10.1002/pssc.201300411
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Kemper RM, Mietze C, Hiller L, et al. Cubic GaN/AlN multi-quantum wells grown on pre-patterned 3C-SiC/Si (001). physica status solidi (c). 2014;11(2):265-268. doi:10.1002/pssc.201300292
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Höpfner H, Fritsche C, Ludwig A, et al. Spin relaxation length in quantum dot spin LEDs. physica status solidi (c). 2013;10(9):1214-1217. doi:10.1002/pssc.201200689
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Höpfner H, Fritsche C, Ludwig A, et al. Spin relaxation length in quantum dot spin LEDs. physica status solidi (c). 2013;10(9):1214-1217. doi:10.1002/pssc.201200689
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Kemper RM, Häberlen M, Schupp T, et al. Formation of defects in cubic GaN grown on nano-patterned 3C-SiC (001). physica status solidi (c). 2012;9(3-4):1028-1031. doi:10.1002/pssc.201100174
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Hölscher R, Sanna S, Schmidt WG. Adsorption of OH and H at the LiNbO3(0001) surface. physica status solidi (c). 2012;9(6):1361-1365. doi:10.1002/pssc.201100534
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Zirkelbach F, Stritzker B, Nordlund K, Schmidt WG, Rauls E, Lindner JKN. First-principles and empirical potential simulation study of intrinsic and carbon-related defects in silicon. physica status solidi (c). 2012;9(10-11):1968-1973. doi:10.1002/pssc.201200198
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