Telecom C-band photon emission from (In,Ga)As quantum dots generated by filling nanoholes in In0.52Al0.48As layers
D. Deutsch, C. Buchholz, V. Zolatanosha, K.D. Jöns, D. Reuter, AIP Advances 13 (2023).

Telecom C-band photon emission from (In,Ga)As quantum dots generated by filling nanoholes in In0.52Al0.48As layers
D. Deutsch, C. Buchholz, V. Zolatanosha, K.D. Jöns, D. Reuter, AIP Advances 13 (2023).

General relationship between salt concentration and x-ray absorption for binary electrolytes
H.-G. Steinrück, AIP Advances 11 (2021) 115119.

Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)
F. Meier, M. Protte, E. Baron, M. Feneberg, R. Goldhahn, D. Reuter, D.J. As, AIP Advances (2021).

Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)
F. Meier, M. Protte, E. Baron, M. Feneberg, R. Goldhahn, D. Reuter, D.J. As, AIP Advances (2021).

Thermal energy and charge currents in multi-terminal nanorings
T. Kramer, C. Kreisbeck, C. Riha, O. Chiatti, S.S. Buchholz, A.D. Wieck, D. Reuter, S.F. Fischer, AIP Advances 6 (2016).

Structural enhancement of ZnO on SiO2 for photonic applications
M. Ruth, C. Meier, AIP Advances 3 (2013).