Andersen UL, Leuchs G, Silberhorn C. Continuous-variable quantum information processing. Laser &;amp; Photonics Reviews. 2009;4(3):337-354. doi:10.1002/lpor.200910010

Wu J-M, Antonietti M, Gross S, Bauer M, Smarsly BM. Ordered Mesoporous Thin Films of Rutile TiO2 Nanocrystals Mixed with Amorphous TO5. ChemPhysChem. 2008;9(5):748-757. doi:10.1002/cphc.200700679

Matthias H, Schweizer SL, Wehrspohn RB, Kitzerow H-S. Liquid crystal director fields in micropores of photonic crystals. Journal of Optics A: Pure and Applied Optics. 2007;9(9):9-5. doi:10.1088/1464-4258/9/9/s18

Kitzerow H-S. News about Soft Condensed Matter—A Liquid Crystal Meeting Review. ChemPhysChem. 2005;2(10):628-632. doi:10.1002/1439-7641(20011015)2:10&#60;628::aid-cphc628&#62;3.0.co;2-7

Mießen N, Strauß J, Hoischen A, Kürschner K, Kitzerow H-S. Durable Micropatterns Obtained from Dissipative Structures in Liquid Crystals. ChemPhysChem. 2005;2(11):691-694. doi:10.1002/1439-7641(20011119)2:11&#60;691::aid-cphc691&#62;3.0.co;2-s

Pannemann Ch, Diekmann T, Hilleringmann U. Nanometer scale organic thin film transistors with Pentacene. Microelectronic Engineering. 2003;67-68:845-852. doi:10.1016/s0167-9317(03)00146-1

Schönstein I, Müller J, Hilleringmann U, Goser K. Characterization of submicron NMOS devices due to visible light emission. Microelectronic Engineering. 2002;21(1-4):363-366. doi:10.1016/0167-9317(93)90092-j

Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. Microelectronic Engineering. 2002;19(1-4):211-214. doi:10.1016/0167-9317(92)90425-q

Horstmann JT, Hilleringmann U, Goser K. Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique. Microelectronic Engineering. 2002;30(1-4):431-434. doi:10.1016/0167-9317(95)00280-4

Mankowski V, Hilleringmann U, Schumacher K. A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV. Microelectronic Engineering. 2002;53(1-4):525-528. doi:10.1016/s0167-9317(00)00370-1

Horstmann JT, Hilleringmann U, Goser K. 1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. Microelectronic Engineering. 2002;53(1-4):213-216. doi:10.1016/s0167-9317(00)00299-9

Hilleringmann U, Knospe K, Heite C, Schumacher K, Goser K. A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits. Microelectronic Engineering. 2002;15(1-4):289-292. doi:10.1016/0167-9317(91)90231-2

Soennecken A, Hilleringmann U, Goser K. Floating gate structures as nonvolatile analog memory cells in 1.0;cm-LOCOS-CMOS technology with PZT dielectrica. Microelectronic Engineering. 2002;15(1-4):633-636. doi:10.1016/0167-9317(91)90299-s

Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. Microelectronic Engineering. 2002;19(1-4):211-214. doi:10.1016/0167-9317(92)90425-q

Adams S, Hilleringmann U, Goser K. CMOS compatible micromachining by dry silicon-etching techniques. Microelectronic Engineering. 2002;19(1-4):191-194. doi:10.1016/0167-9317(92)90420-v

Mankowski V, Hilleringmann U, Schumacher K. 12 kV low current cascaded light triggered switch on one silicon chip. Microelectronic Engineering. 2002;46(1-4):413-417. doi:10.1016/s0167-9317(99)00122-7

Hilleringmann U, Vieregge T, Horstmann JT. A structure definition technique for 25 nm lines of silicon and related materials. Microelectronic Engineering. 2002;53(1-4):569-572. doi:10.1016/s0167-9317(00)00380-4

Müller S, Fischer P, Schmidt C. Solid-Like Director Reorientation in Sheared Hexagonal Lyotropic Liquid Crystals as Studied by Nuclear Maginetic Resonance. Journal de Physique II. 1997;7(3):421-432. doi:10.1051/jp2:1997135

Dolganov VK, Lourie OR, Heppke G, Kitzerow H-S. Anomalies of the temperature dependence of electrostriction in blue phases. Journal de Physique II. 1993;3(7):1087-1096. doi:10.1051/jp2:1993185

Kitzerow H-S, Crooker PP. UV-cured cholesteric polymer-dispersed liquid crystal display. Journal de Physique II. 1993;3(5):719-726. doi:10.1051/jp2:1993162