U. L. Andersen, G. Leuchs, and C. Silberhorn, “Continuous-variable quantum information processing,”10.1002/lpor.200910010__Laser &;amp; Photonics Reviews, vol. 4, no. 3, pp. 337–354, 2009, doi:10.1002/lpor.200910010 .

J.-M. Wu, M. Antonietti, S. Gross, M. Bauer, and B. M. Smarsly, “Ordered Mesoporous Thin Films of Rutile TiO2 Nanocrystals Mixed with Amorphous TO5,”10.1002/cphc.200700679__ChemPhysChem, vol. 9, no. 5, pp. 748–757, 2008, doi:10.1002/cphc.200700679 .

H. Matthias, S. L. Schweizer, R. B. Wehrspohn, and H.-S. Kitzerow, “Liquid crystal director fields in micropores of photonic crystals,”10.1088/1464-4258/9/9/s18__Journal of Optics A: Pure and Applied Optics, vol. 9, no. 9, pp. 9–5, 2007, doi:10.1088/1464-4258/9/9/s18 .

H.-S. Kitzerow, “News about Soft Condensed Matter—A Liquid Crystal Meeting Review,”10.1002/1439-7641(20011015)2:10&#60;628::aid-cphc628&#62;3.0.co;2-7__ChemPhysChem, vol. 2, no. 10, pp. 628–632, 2005, doi:10.1002/1439-7641(20011015)2:10&#60;628::aid-cphc628&#62;3.0.co;2-7 .

N. Mießen, J. Strauß, A. Hoischen, K. Kürschner, and H.-S. Kitzerow, “Durable Micropatterns Obtained from Dissipative Structures in Liquid Crystals,”10.1002/1439-7641(20011119)2:11&#60;691::aid-cphc691&#62;3.0.co;2-s__ChemPhysChem, vol. 2, no. 11, pp. 691–694, 2005, doi:10.1002/1439-7641(20011119)2:11&#60;691::aid-cphc691&#62;3.0.co;2-s .

Ch. Pannemann, T. Diekmann, and U. Hilleringmann, “Nanometer scale organic thin film transistors with Pentacene,”10.1016/s0167-9317(03)00146-1__Microelectronic Engineering, vol. 67–68, pp. 845–852, 2003, doi:10.1016/s0167-9317(03)00146-1 .

I. Schönstein, J. Müller, U. Hilleringmann, and K. Goser, “Characterization of submicron NMOS devices due to visible light emission,”10.1016/0167-9317(93)90092-j__Microelectronic Engineering, vol. 21, no. 1–4, pp. 363–366, 2002, doi:10.1016/0167-9317(93)90092-j .

U. Hilleringmann and K. Goser, “Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon,”10.1016/0167-9317(92)90425-q__Microelectronic Engineering, vol. 19, no. 1–4, pp. 211–214, 2002, doi:10.1016/0167-9317(92)90425-q .

J. T. Horstmann, U. Hilleringmann, and K. Goser, “Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique,”10.1016/0167-9317(95)00280-4__Microelectronic Engineering, vol. 30, no. 1–4, pp. 431–434, 2002, doi:10.1016/0167-9317(95)00280-4 .

V. Mankowski, U. Hilleringmann, and K. Schumacher, “A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV,”10.1016/s0167-9317(00)00370-1__Microelectronic Engineering, vol. 53, no. 1–4, pp. 525–528, 2002, doi:10.1016/s0167-9317(00)00370-1 .

J. T. Horstmann, U. Hilleringmann, and K. Goser, “/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique,”10.1016/s0167-9317(00)00299-9__Microelectronic Engineering, vol. 53, no. 1–4, pp. 213–216, 2002, doi:10.1016/s0167-9317(00)00299-9 .

U. Hilleringmann, K. Knospe, C. Heite, K. Schumacher, and K. Goser, “A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits,”10.1016/0167-9317(91)90231-2__Microelectronic Engineering, vol. 15, no. 1–4, pp. 289–292, 2002, doi:10.1016/0167-9317(91)90231-2 .

A. Soennecken, U. Hilleringmann, and K. Goser, “Floating gate structures as nonvolatile analog memory cells in 1.0;cm-LOCOS-CMOS technology with PZT dielectrica,”10.1016/0167-9317(91)90299-s__Microelectronic Engineering, vol. 15, no. 1–4, pp. 633–636, 2002, doi:10.1016/0167-9317(91)90299-s .

U. Hilleringmann and K. Goser, “Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon,”10.1016/0167-9317(92)90425-q__Microelectronic Engineering, vol. 19, no. 1–4, pp. 211–214, 2002, doi:10.1016/0167-9317(92)90425-q .

S. Adams, U. Hilleringmann, and K. Goser, “CMOS compatible micromachining by dry silicon-etching techniques,”10.1016/0167-9317(92)90420-v__Microelectronic Engineering, vol. 19, no. 1–4, pp. 191–194, 2002, doi:10.1016/0167-9317(92)90420-v .

V. Mankowski, U. Hilleringmann, and K. Schumacher, “kV low current cascaded light triggered switch on one silicon chip,”10.1016/s0167-9317(99)00122-7__Microelectronic Engineering, vol. 46, no. 1–4, pp. 413–417, 2002, doi:10.1016/s0167-9317(99)00122-7 .

U. Hilleringmann, T. Vieregge, and J. T. Horstmann, “A structure definition technique for 25 nm lines of silicon and related materials,”10.1016/s0167-9317(00)00380-4__Microelectronic Engineering, vol. 53, no. 1–4, pp. 569–572, 2002, doi:10.1016/s0167-9317(00)00380-4 .

S. Müller, P. Fischer, and C. Schmidt, “Solid-Like Director Reorientation in Sheared Hexagonal Lyotropic Liquid Crystals as Studied by Nuclear Maginetic Resonance,”10.1051/jp2:1997135__Journal de Physique II, vol. 7, no. 3, pp. 421–432, 1997, doi:10.1051/jp2:1997135 .

V. K. Dolganov, O. R. Lourie, G. Heppke, and H.-S. Kitzerow, “Anomalies of the temperature dependence of electrostriction in blue phases,”10.1051/jp2:1993185__Journal de Physique II, vol. 3, no. 7, pp. 1087–1096, 1993, doi:10.1051/jp2:1993185 .

H.-S. Kitzerow and P. P. Crooker, “UV-cured cholesteric polymer-dispersed liquid crystal display,”10.1051/jp2:1993162__Journal de Physique II, vol. 3, no. 5, pp. 719–726, 1993, doi:10.1051/jp2:1993162 .