Ksenzov D, Grigorian S, Hendel S, et al. Reflection of femtosecond pulses from soft X-ray free-electron laser by periodical multilayers. physica status solidi (a). 2009;206(8):1875-1879. doi:10.1002/pssa.200881585

Rill C, Bauer M, Bertagnolli H, Kickelbick G. Microemulsion approach to neodymium, europium, and ytterbium oxide/hydroxide colloids—Effects of precursors and preparation parameters on particle size and crystallinity. Journal of Colloid and Interface Science. 2008;325(1):179-186. doi:10.1016/j.jcis.2008.05.008

Diekmann T, Pannemann C, Hilleringmann U. Dielectric layers for organic field effect transistors as gate dielectric and surface passivation. physica status solidi (a). 2008;205(3):564-577. doi:10.1002/pssa.200723406

Kitzerow H-S, Lorenz A, Matthias H. Tuneable photonic crystals obtained by liquid crystal infiltration. physica status solidi (a). 2007;204(11):3754-3767. doi:10.1002/pssa.200776404

Kitzerow H-S, Lorenz A, Matthias H. Tuneable photonic crystals obtained by liquid crystal infiltration. physica status solidi (a). 2007;204(11):3754-3767. doi:10.1002/pssa.200776404

Bauer M, Bertagnolli H. The Amplitude Reduction Factor and the Cumulant Expansion Method:  Crucial Factors in the Structural Analysis of Alkoxide Precursors in Solution. The Journal of Physical Chemistry B. 2007;111(49):13756-13764. doi:10.1021/jp076386i

Lages S, Schweins R, Huber K. Temperature-Induced Collapse of Alkaline Earth CationPolyacrylate Anion Complexes. The Journal of Physical Chemistry B. 2007;111(35):10431-10437. doi:10.1021/jp068258k

Jiang J, Hilleringmann U, Shui X. Electro-thermo-mechanical analytical modeling of multilayer cantilever microactuator. Sensors and Actuators A: Physical. 2007;137(2):302-307. doi:10.1016/j.sna.2007.03.012

Frank C, Strey R, Schmidt C, Stubenrauch C. Coexisting lamellar phases in water–oil–surfactant systems induced by the addition of an amphiphilic block copolymer. Journal of Colloid and Interface Science. 2006;312(1):76-86. doi:10.1016/j.jcis.2006.06.043

Kramer T, Scholz S, Maskos M, Huber K. Colloid–polymer mixtures in solution with refractive index matched acrylate colloids. Journal of Colloid and Interface Science. 2004;279(2):447-457. doi:10.1016/j.jcis.2004.06.102

Angelico R, Burgemeister D, Ceglie A, Olsson U, Palazzo G, Schmidt C. Deuterium NMR Study of Slow Relaxation Dynamics in a Polymer-like Micelles System after Flow-Induced Orientation. The Journal of Physical Chemistry B. 2003;107(38):10325-10328. doi:10.1021/jp0356259

Pannemann Ch, Diekmann T, Hilleringmann U. Nanometer scale organic thin film transistors with Pentacene. Microelectronic Engineering. 2003;67-68:845-852. doi:10.1016/s0167-9317(03)00146-1

Schönstein I, Müller J, Hilleringmann U, Goser K. Characterization of submicron NMOS devices due to visible light emission. Microelectronic Engineering. 2002;21(1-4):363-366. doi:10.1016/0167-9317(93)90092-j

Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. Microelectronic Engineering. 2002;19(1-4):211-214. doi:10.1016/0167-9317(92)90425-q

Horstmann JT, Hilleringmann U, Goser K. Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique. Microelectronic Engineering. 2002;30(1-4):431-434. doi:10.1016/0167-9317(95)00280-4

Mankowski V, Hilleringmann U, Schumacher K. A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV. Microelectronic Engineering. 2002;53(1-4):525-528. doi:10.1016/s0167-9317(00)00370-1

Horstmann JT, Hilleringmann U, Goser K. 1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. Microelectronic Engineering. 2002;53(1-4):213-216. doi:10.1016/s0167-9317(00)00299-9

Hilleringmann U, Knospe K, Heite C, Schumacher K, Goser K. A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits. Microelectronic Engineering. 2002;15(1-4):289-292. doi:10.1016/0167-9317(91)90231-2

Soennecken A, Hilleringmann U, Goser K. Floating gate structures as nonvolatile analog memory cells in 1.0;cm-LOCOS-CMOS technology with PZT dielectrica. Microelectronic Engineering. 2002;15(1-4):633-636. doi:10.1016/0167-9317(91)90299-s

Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. Microelectronic Engineering. 2002;19(1-4):211-214. doi:10.1016/0167-9317(92)90425-q