Brass, E., Hilleringmann, U., &; Schumacher, K. (2002). System integration of optical devices and analog CMOS amplifiers. IEEE Journal of Solid-State Circuits, 29(8), 1006–1010.https://doi.org/10.1109/4.297714 
LibreCat: /record/39907
DOI: 10.1109/4.297714

Horstmann, J. T., Hilleringmann, U., &; Goser, K. (2002). Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique. Microelectronic Engineering, 30(1–4), 431–434.https://doi.org/10.1016/0167-9317(95)00280-4 
LibreCat: /record/39899
DOI: 10.1016/0167-9317(95)00280-4

Goser, K., Hilleringmann, U., Rueckert, U., &; Schumacher, K. (2002). VLSI technologies for artificial neural networks. IEEE Micro, 9(6), 28–44.https://doi.org/10.1109/40.42985 
LibreCat: /record/39925
DOI: 10.1109/40.42985

Mankowski, V., Hilleringmann, U., &; Schumacher, K. (2002). A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV. Microelectronic Engineering, 53(1–4), 525–528.https://doi.org/10.1016/s0167-9317(00)00370-1 
LibreCat: /record/39882
DOI: 10.1016/s0167-9317(00)00370-1

Horstmann, J. T., Hilleringmann, U., &; Goser, K. (2002). 1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. Microelectronic Engineering, 53(1–4), 213–216.https://doi.org/10.1016/s0167-9317(00)00299-9 
LibreCat: /record/39879
DOI: 10.1016/s0167-9317(00)00299-9

Hilleringmann, U., Knospe, K., Heite, C., Schumacher, K., &; Goser, K. (2002). A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits. Microelectronic Engineering, 15(1–4), 289–292.https://doi.org/10.1016/0167-9317(91)90231-2 
LibreCat: /record/39919
DOI: 10.1016/0167-9317(91)90231-2

Goser, K., Hilleringmann, U., Rueckert, U., &; Schumacher, K. (2002). VLSI technologies for artificial neural networks. IEEE Micro, 9(6), 28–44.https://doi.org/10.1109/40.42985 
LibreCat: /record/39926
DOI: 10.1109/40.42985

Soennecken, A., Hilleringmann, U., &; Goser, K. (2002). Floating gate structures as nonvolatile analog memory cells in 1.0;cm-LOCOS-CMOS technology with PZT dielectrica. Microelectronic Engineering, 15(1–4), 633–636.https://doi.org/10.1016/0167-9317(91)90299-s 
LibreCat: /record/39920
DOI: 10.1016/0167-9317(91)90299-s

Hilleringmann, U., &; Goser, K. (2002). Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. Microelectronic Engineering, 19(1–4), 211–214.https://doi.org/10.1016/0167-9317(92)90425-q 
LibreCat: /record/39915
DOI: 10.1016/0167-9317(92)90425-q

Adams, S., Hilleringmann, U., &; Goser, K. (2002). CMOS compatible micromachining by dry silicon-etching techniques. Microelectronic Engineering, 19(1–4), 191–194.https://doi.org/10.1016/0167-9317(92)90420-v 
LibreCat: /record/39916
DOI: 10.1016/0167-9317(92)90420-v

Horstmann, J. T., Hilleringmann, U., &; Goser, K. F. (2002). Matching analysis of deposition defined 50-nm MOSFET’s. IEEE Transactions on Electron Devices, 45(1), 299–306.https://doi.org/10.1109/16.658845 
LibreCat: /record/39348
DOI: 10.1109/16.658845

Mankowski, V., Hilleringmann, U., &; Schumacher, K. (2002). 12 kV low current cascaded light triggered switch on one silicon chip. Microelectronic Engineering, 46(1–4), 413–417.https://doi.org/10.1016/s0167-9317(99)00122-7 
LibreCat: /record/39889
DOI: 10.1016/s0167-9317(99)00122-7

Horstmann, J. T., Hilleringmann, U., &; Goser, K. F. (2002). Matching analysis of deposition defined 50-nm MOSFET’s. IEEE Transactions on Electron Devices, 45(1), 299–306.https://doi.org/10.1109/16.658845 
LibreCat: /record/39891
DOI: 10.1109/16.658845

Wirth, G., Hilleringmann, U., Horstmann, J. T., &; Goser, K. (2002). Mesoscopic transport phenomena in ultrashort channel MOSFETs. Solid-State Electronics, 43(7), 1245–1250.https://doi.org/10.1016/s0038-1101(99)00060-x 
LibreCat: /record/39886
DOI: 10.1016/s0038-1101(99)00060-x

Otterbach, R., Hilleringmann, U., Horstmann, T. J., &; Goser, K. (2002). Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications. Diamond and Related Materials, 10(3–7), 511–514.https://doi.org/10.1016/s0925-9635(01)00373-9 
LibreCat: /record/39876
DOI: 10.1016/s0925-9635(01)00373-9

Hilleringmann, U., Vieregge, T., &; Horstmann, J. T. (2002). A structure definition technique for 25 nm lines of silicon and related materials. Microelectronic Engineering, 53(1–4), 569–572.https://doi.org/10.1016/s0167-9317(00)00380-4 
LibreCat: /record/39877
DOI: 10.1016/s0167-9317(00)00380-4

Otterbach, R., &; Hilleringmann, U. (2002). Reactive ion etching of CVD-diamond for piezoresistive pressure sensors. Diamond and Related Materials, 11(3–6), 841–844.https://doi.org/10.1016/s0925-9635(01)00703-8 
LibreCat: /record/39874
DOI: 10.1016/s0925-9635(01)00703-8

Grotstollen, H., &; Wiesing, J. (1995). Torque capability and control of a saturated induction motor over a wide range of flux weakening. IEEE Transactions on Industrial Electronics, 42(4), 374–381.https://doi.org/10.1109/41.402476 
LibreCat: /record/30050
DOI: 10.1109/41.402476