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Horstmann, J. T., et al. “Characterisation of Sub-100 Nm-MOS-Transistors Processed by Optical Lithography and a Sidewall-Etchback Technique.”10.1016/0167-9317(95)00280-4__Microelectronic Engineering, vol. 30, no. 1–4, Elsevier BV, 2002, pp. 431–34, doi:10.1016/0167-9317(95)00280-4.
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Mankowski, V., et al. “A Novel Insulation Technique for Smart Power Switching Devices and Very High Voltage ICs above 10 KV.”10.1016/s0167-9317(00)00370-1__Microelectronic Engineering, vol. 53, no. 1–4, Elsevier BV, 2002, pp. 525–28, doi:10.1016/s0167-9317(00)00370-1.
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Horstmann, J. T., et al. “/f-Noise of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.”10.1016/s0167-9317(00)00299-9__Microelectronic Engineering, vol. 53, no. 1–4, Elsevier BV, 2002, pp. 213–16, doi:10.1016/s0167-9317(00)00299-9.
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Hilleringmann, Ulrich, et al. “A Silicon Based Technology for Monolithic Integration of Waveguides and VLSI CMOS Circuits.”10.1016/0167-9317(91)90231-2__Microelectronic Engineering, vol. 15, no. 1–4, Elsevier BV, 2002, pp. 289–92, doi:10.1016/0167-9317(91)90231-2.
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Goser, K., et al. “VLSI Technologies for Artificial Neural Networks.”10.1109/40.42985__IEEE Micro, vol. 9, no. 6, Institute of Electrical and Electronics Engineers (IEEE), 2002, pp. 28–44, doi:10.1109/40.42985.
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Soennecken, A., et al. “Floating Gate Structures as Nonvolatile Analog Memory Cells in 1.0;cm-LOCOS-CMOS Technology with PZT Dielectrica.”10.1016/0167-9317(91)90299-s__Microelectronic Engineering, vol. 15, no. 1–4, Elsevier BV, 2002, pp. 633–36, doi:10.1016/0167-9317(91)90299-s.
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Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.”10.1016/0167-9317(92)90425-q__Microelectronic Engineering, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 211–14, doi:10.1016/0167-9317(92)90425-q.
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Adams, S., et al. “CMOS Compatible Micromachining by Dry Silicon-Etching Techniques.”10.1016/0167-9317(92)90420-v__Microelectronic Engineering, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 191–94, doi:10.1016/0167-9317(92)90420-v.
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Horstmann, J. T., et al. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.”10.1109/16.658845__IEEE Transactions on Electron Devices, vol. 45, no. 1, Institute of Electrical and Electronics Engineers (IEEE), 2002, pp. 299–306, doi:10.1109/16.658845.
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Horstmann, J. T., et al. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.”10.1109/16.658845__IEEE Transactions on Electron Devices, vol. 45, no. 1, Institute of Electrical and Electronics Engineers (IEEE), 2002, pp. 299–306, doi:10.1109/16.658845.
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Hilleringmann, Ulrich, et al. “A Structure Definition Technique for 25 Nm Lines of Silicon and Related Materials.”10.1016/s0167-9317(00)00380-4__Microelectronic Engineering, vol. 53, no. 1–4, Elsevier BV, 2002, pp. 569–72, doi:10.1016/s0167-9317(00)00380-4.
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Otterbach, R., and Ulrich Hilleringmann. “Reactive Ion Etching of CVD-Diamond for Piezoresistive Pressure Sensors.”10.1016/s0925-9635(01)00703-8__Diamond and Related Materials, vol. 11, no. 3–6, Elsevier BV, 2002, pp. 841–44, doi:10.1016/s0925-9635(01)00703-8.
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Grotstollen, H., and J. Wiesing. “Torque Capability and Control of a Saturated Induction Motor over a Wide Range of Flux Weakening.”10.1109/41.402476__IEEE Transactions on Industrial Electronics, vol. 42, no. 4, Institute of Electrical and Electronics Engineers (IEEE), 1995, pp. 374–81, doi:10.1109/41.402476.
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