Kitzerow H-S, Lorenz A, Matthias H. Tuneable photonic crystals obtained by liquid crystal infiltration. physica status solidi (a). 2007;204(11):3754-3767. doi:10.1002/pssa.200776404

Jiang J, Hilleringmann U, Shui X. Electro-thermo-mechanical analytical modeling of multilayer cantilever microactuator. Sensors and Actuators A: Physical. 2007;137(2):302-307. doi:10.1016/j.sna.2007.03.012

Schmalhorst J, Ebke D, Sacher M, et al. Chemical and Magnetic Interface Properties of Tunnel Junctions With Co$_2$MnSi/Co$_2$FeSi Multilayer Electrode Showing Large Tunneling Magnetoresistance. IEEE Transactions on Magnetics. 2007;43(6):2806-2808. doi:10.1109/tmag.2007.893475

Amann N, Böcker J, Prenner F. Active Damping of Drive Train Oscillations for an Electrically Driven Vehicle. IEEE/ASME Transactions on Mechatronics. 2004;9(4):697-700. doi:10.1109/tmech.2004.839036

Pannemann Ch, Diekmann T, Hilleringmann U. Nanometer scale organic thin film transistors with Pentacene. Microelectronic Engineering. 2003;67-68:845-852. doi:10.1016/s0167-9317(03)00146-1

Böcker J, Janning J, Jebenstreit H. High dynamic control of a three-level voltage-source-converter drive for a main strip mill. IEEE Transactions on Industrial Electronics. 2002;49(5):1081-1092. doi:10.1109/tie.2002.803220

Hilleringmann U, Goser K. Optoelectronic system integration on silicon: waveguides, photodetectors, and VLSI CMOS circuits on one chip. IEEE Transactions on Electron Devices. 2002;42(5):841-846. doi:10.1109/16.381978

Schönstein I, Müller J, Hilleringmann U, Goser K. Characterization of submicron NMOS devices due to visible light emission. Microelectronic Engineering. 2002;21(1-4):363-366. doi:10.1016/0167-9317(93)90092-j

Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. Microelectronic Engineering. 2002;19(1-4):211-214. doi:10.1016/0167-9317(92)90425-q

Brass E, Hilleringmann U, Schumacher K. System integration of optical devices and analog CMOS amplifiers. IEEE Journal of Solid-State Circuits. 2002;29(8):1006-1010. doi:10.1109/4.297714

Brass E, Hilleringmann U, Schumacher K. System integration of optical devices and analog CMOS amplifiers. IEEE Journal of Solid-State Circuits. 2002;29(8):1006-1010. doi:10.1109/4.297714

Horstmann JT, Hilleringmann U, Goser K. Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique. Microelectronic Engineering. 2002;30(1-4):431-434. doi:10.1016/0167-9317(95)00280-4

Goser K, Hilleringmann U, Rueckert U, Schumacher K. VLSI technologies for artificial neural networks. IEEE Micro. 2002;9(6):28-44. doi:10.1109/40.42985

Mankowski V, Hilleringmann U, Schumacher K. A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV. Microelectronic Engineering. 2002;53(1-4):525-528. doi:10.1016/s0167-9317(00)00370-1

Horstmann JT, Hilleringmann U, Goser K. 1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. Microelectronic Engineering. 2002;53(1-4):213-216. doi:10.1016/s0167-9317(00)00299-9

Hilleringmann U, Knospe K, Heite C, Schumacher K, Goser K. A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits. Microelectronic Engineering. 2002;15(1-4):289-292. doi:10.1016/0167-9317(91)90231-2

Goser K, Hilleringmann U, Rueckert U, Schumacher K. VLSI technologies for artificial neural networks. IEEE Micro. 2002;9(6):28-44. doi:10.1109/40.42985

Soennecken A, Hilleringmann U, Goser K. Floating gate structures as nonvolatile analog memory cells in 1.0;cm-LOCOS-CMOS technology with PZT dielectrica. Microelectronic Engineering. 2002;15(1-4):633-636. doi:10.1016/0167-9317(91)90299-s

Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. Microelectronic Engineering. 2002;19(1-4):211-214. doi:10.1016/0167-9317(92)90425-q

Adams S, Hilleringmann U, Goser K. CMOS compatible micromachining by dry silicon-etching techniques. Microelectronic Engineering. 2002;19(1-4):191-194. doi:10.1016/0167-9317(92)90420-v