Brass E, Hilleringmann U, Schumacher K. System integration of optical devices and analog CMOS amplifiers. IEEE Journal of Solid-State Circuits. 2002;29(8):1006-1010. doi:10.1109/4.297714

Horstmann JT, Hilleringmann U, Goser K. Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique. Microelectronic Engineering. 2002;30(1-4):431-434. doi:10.1016/0167-9317(95)00280-4

Goser K, Hilleringmann U, Rueckert U, Schumacher K. VLSI technologies for artificial neural networks. IEEE Micro. 2002;9(6):28-44. doi:10.1109/40.42985

Mankowski V, Hilleringmann U, Schumacher K. A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV. Microelectronic Engineering. 2002;53(1-4):525-528. doi:10.1016/s0167-9317(00)00370-1

Horstmann JT, Hilleringmann U, Goser K. 1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. Microelectronic Engineering. 2002;53(1-4):213-216. doi:10.1016/s0167-9317(00)00299-9

Hilleringmann U, Knospe K, Heite C, Schumacher K, Goser K. A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits. Microelectronic Engineering. 2002;15(1-4):289-292. doi:10.1016/0167-9317(91)90231-2

Goser K, Hilleringmann U, Rueckert U, Schumacher K. VLSI technologies for artificial neural networks. IEEE Micro. 2002;9(6):28-44. doi:10.1109/40.42985

Soennecken A, Hilleringmann U, Goser K. Floating gate structures as nonvolatile analog memory cells in 1.0;cm-LOCOS-CMOS technology with PZT dielectrica. Microelectronic Engineering. 2002;15(1-4):633-636. doi:10.1016/0167-9317(91)90299-s

Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. Microelectronic Engineering. 2002;19(1-4):211-214. doi:10.1016/0167-9317(92)90425-q

Adams S, Hilleringmann U, Goser K. CMOS compatible micromachining by dry silicon-etching techniques. Microelectronic Engineering. 2002;19(1-4):191-194. doi:10.1016/0167-9317(92)90420-v

Horstmann JT, Hilleringmann U, Goser KF. Matching analysis of deposition defined 50-nm MOSFET’s. IEEE Transactions on Electron Devices. 2002;45(1):299-306. doi:10.1109/16.658845

Mankowski V, Hilleringmann U, Schumacher K. 12 kV low current cascaded light triggered switch on one silicon chip. Microelectronic Engineering. 2002;46(1-4):413-417. doi:10.1016/s0167-9317(99)00122-7

Horstmann JT, Hilleringmann U, Goser KF. Matching analysis of deposition defined 50-nm MOSFET’s. IEEE Transactions on Electron Devices. 2002;45(1):299-306. doi:10.1109/16.658845

Wirth G, Hilleringmann U, Horstmann JT, Goser K. Mesoscopic transport phenomena in ultrashort channel MOSFETs. Solid-State Electronics. 2002;43(7):1245-1250. doi:10.1016/s0038-1101(99)00060-x

Otterbach R, Hilleringmann U, Horstmann TJ, Goser K. Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications. Diamond and Related Materials. 2002;10(3-7):511-514. doi:10.1016/s0925-9635(01)00373-9

Hilleringmann U, Vieregge T, Horstmann JT. A structure definition technique for 25 nm lines of silicon and related materials. Microelectronic Engineering. 2002;53(1-4):569-572. doi:10.1016/s0167-9317(00)00380-4

Otterbach R, Hilleringmann U. Reactive ion etching of CVD-diamond for piezoresistive pressure sensors. Diamond and Related Materials. 2002;11(3-6):841-844. doi:10.1016/s0925-9635(01)00703-8

Grotstollen H, Wiesing J. Torque capability and control of a saturated induction motor over a wide range of flux weakening. IEEE Transactions on Industrial Electronics. 1995;42(4):374-381. doi:10.1109/41.402476