Matching analysis of deposition defined 50-nm MOSFET's
J.T. Horstmann, U. Hilleringmann, K.F. Goser, IEEE Transactions on Electron Devices 45 (2002) 299–306.

12 kV low current cascaded light triggered switch on one silicon chip
V. Mankowski, U. Hilleringmann, K. Schumacher, Microelectronic Engineering 46 (2002) 413–417.

Matching analysis of deposition defined 50-nm MOSFET's
J.T. Horstmann, U. Hilleringmann, K.F. Goser, IEEE Transactions on Electron Devices 45 (2002) 299–306.

Mesoscopic transport phenomena in ultrashort channel MOSFETs
G. Wirth, U. Hilleringmann, J.T. Horstmann, K. Goser, Solid-State Electronics 43 (2002) 1245–1250.

Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications
R. Otterbach, U. Hilleringmann, T.J. Horstmann, K. Goser, Diamond and Related Materials 10 (2002) 511–514.

A structure definition technique for 25 nm lines of silicon and related materials
U. Hilleringmann, T. Vieregge, J.T. Horstmann, Microelectronic Engineering 53 (2002) 569–572.

Reactive ion etching of CVD-diamond for piezoresistive pressure sensors
R. Otterbach, U. Hilleringmann, Diamond and Related Materials 11 (2002) 841–844.

Torque capability and control of a saturated induction motor over a wide range of flux weakening
H. Grotstollen, J. Wiesing, IEEE Transactions on Industrial Electronics 42 (1995) 374–381.