Active Damping of Drive Train Oscillations for an Electrically Driven Vehicle
N. Amann, J. Böcker, F. Prenner, IEEE/ASME Transactions on Mechatronics 9 (2004) 697–700.
LibreCat: /record/29924
DOI: 10.1109/tmech.2004.839036

Formal Refinement and Model Checking of An Echo Cancellation Unit
A. Krupp, W. Müller, I. Oliver, in: Proceedings of DATE’04 Designers’ Forum, Paris, 2004.
LibreCat: /record/39061
DOI: 10.1109/DATE.2004.1269214

Colloid–polymer mixtures in solution with refractive index matched acrylate colloids
T. Kramer, S. Scholz, M. Maskos, K. Huber, Journal of Colloid and Interface Science 279 (2004) 447–457.
LibreCat: /record/42018
DOI: 10.1016/j.jcis.2004.06.102

X-ray absorption and magnetic circular dichroism studies of ion-bombarded ferromagnet-antiferromagnet bilayers
J. Schmalhorst, M. Sacher, V. Höink, G. Reiss, D. Engel, A. Ehresmann, Physical Review B 70 (2004).
LibreCat: /record/29696
DOI: 10.1103/physrevb.70.184403

X-ray absorption and magnetic circular dichroism studies of ion-bombarded ferromagnet-antiferromagnet bilayers
J. Schmalhorst, M. Sacher, V. Höink, G. Reiss, D. Engel, A. Ehresmann, Physical Review B 70 (2004).
LibreCat: /record/29693
DOI: 10.1103/physrevb.70.184403

Initialization of unidirectional anisotropy in a ferromagnet–antiferromagnet bilayer by keV-He ion bombardment
D. Engel, A. Ehresmann, J. Schmalhorst, M. Sacher, V. Höink, G. Reiss, Journal of Magnetism and Magnetic Materials 293 (2004) 849–853.
LibreCat: /record/29690
DOI: 10.1016/j.jmmm.2004.12.003

Interface structure and magnetism of magnetic tunnel junctions with aCo2MnSielectrode
J. Schmalhorst, S. Kämmerer, M. Sacher, G. Reiss, A. Hütten, A. Scholl, Physical Review B 70 (2004).
LibreCat: /record/29695
DOI: 10.1103/physrevb.70.024426

Morphology and fluorescence quenching in photovoltaic samples containing fullerene and poly(p-phenylene-vinylene) derivatives
T. Röder, H.-S. Kitzerow, J.C. Hummelen, Synthetic Metals 141 (2003) 271–275.
LibreCat: /record/39985
DOI: 10.1016/s0379-6779(03)00412-0

Nanometer scale organic thin film transistors with Pentacene
Ch. Pannemann, T. Diekmann, U. Hilleringmann, Microelectronic Engineering 67–68 (2003) 845–852.
LibreCat: /record/39851
DOI: 10.1016/s0167-9317(03)00146-1

High dynamic control of a three-level voltage-source-converter drive for a main strip mill
J. Böcker, J. Janning, H. Jebenstreit, IEEE Transactions on Industrial Electronics 49 (2002) 1081–1092.
LibreCat: /record/29998
DOI: 10.1109/tie.2002.803220

Optoelectronic system integration on silicon: waveguides, photodetectors, and VLSI CMOS circuits on one chip
U. Hilleringmann, K. Goser, IEEE Transactions on Electron Devices 42 (2002) 841–846.
LibreCat: /record/39904
DOI: 10.1109/16.381978

Characterization of submicron NMOS devices due to visible light emission
I. Schönstein, J. Müller, U. Hilleringmann, K. Goser, Microelectronic Engineering 21 (2002) 363–366.
LibreCat: /record/39912
DOI: 10.1016/0167-9317(93)90092-j

Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon
U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 211–214.
LibreCat: /record/39914
DOI: 10.1016/0167-9317(92)90425-q

System integration of optical devices and analog CMOS amplifiers
E. Brass, U. Hilleringmann, K. Schumacher, IEEE Journal of Solid-State Circuits 29 (2002) 1006–1010.
LibreCat: /record/39906
DOI: 10.1109/4.297714

System integration of optical devices and analog CMOS amplifiers
E. Brass, U. Hilleringmann, K. Schumacher, IEEE Journal of Solid-State Circuits 29 (2002) 1006–1010.
LibreCat: /record/39907
DOI: 10.1109/4.297714

Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique
J.T. Horstmann, U. Hilleringmann, K. Goser, Microelectronic Engineering 30 (2002) 431–434.
LibreCat: /record/39899
DOI: 10.1016/0167-9317(95)00280-4

VLSI technologies for artificial neural networks
K. Goser, U. Hilleringmann, U. Rueckert, K. Schumacher, IEEE Micro 9 (2002) 28–44.
LibreCat: /record/39925
DOI: 10.1109/40.42985

A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV
V. Mankowski, U. Hilleringmann, K. Schumacher, Microelectronic Engineering 53 (2002) 525–528.
LibreCat: /record/39882
DOI: 10.1016/s0167-9317(00)00370-1

1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique
J.T. Horstmann, U. Hilleringmann, K. Goser, Microelectronic Engineering 53 (2002) 213–216.
LibreCat: /record/39879
DOI: 10.1016/s0167-9317(00)00299-9

A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits
U. Hilleringmann, K. Knospe, C. Heite, K. Schumacher, K. Goser, Microelectronic Engineering 15 (2002) 289–292.
LibreCat: /record/39919
DOI: 10.1016/0167-9317(91)90231-2