Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.”https://doi.org/10.1016/0167-9317(92)90425-q__Microelectronic Engineering 19, no. 1–4 (2002): 211–14.https://doi.org/10.1016/0167-9317(92)90425-q .

Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “Characterisation of Sub-100 Nm-MOS-Transistors Processed by Optical Lithography and a Sidewall-Etchback Technique.”https://doi.org/10.1016/0167-9317(95)00280-4__Microelectronic Engineering 30, no. 1–4 (2002): 431–34.https://doi.org/10.1016/0167-9317(95)00280-4 .

Mankowski, V., Ulrich Hilleringmann, and K. Schumacher. “A Novel Insulation Technique for Smart Power Switching Devices and Very High Voltage ICs above 10 KV.”https://doi.org/10.1016/s0167-9317(00)00370-1__Microelectronic Engineering 53, no. 1–4 (2002): 525–28.https://doi.org/10.1016/s0167-9317(00)00370-1 .

Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “/f-Noise of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.”https://doi.org/10.1016/s0167-9317(00)00299-9__Microelectronic Engineering 53, no. 1–4 (2002): 213–16.https://doi.org/10.1016/s0167-9317(00)00299-9 .

Hilleringmann, Ulrich, K. Knospe, C. Heite, K. Schumacher, and K. Goser. “A Silicon Based Technology for Monolithic Integration of Waveguides and VLSI CMOS Circuits.”https://doi.org/10.1016/0167-9317(91)90231-2__Microelectronic Engineering 15, no. 1–4 (2002): 289–92.https://doi.org/10.1016/0167-9317(91)90231-2 .

Soennecken, A., Ulrich Hilleringmann, and K. Goser. “Floating Gate Structures as Nonvolatile Analog Memory Cells in 1.0;cm-LOCOS-CMOS Technology with PZT Dielectrica.”https://doi.org/10.1016/0167-9317(91)90299-s__Microelectronic Engineering 15, no. 1–4 (2002): 633–36.https://doi.org/10.1016/0167-9317(91)90299-s .

Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.”https://doi.org/10.1016/0167-9317(92)90425-q__Microelectronic Engineering 19, no. 1–4 (2002): 211–14.https://doi.org/10.1016/0167-9317(92)90425-q .

Adams, S., Ulrich Hilleringmann, and K. Goser. “CMOS Compatible Micromachining by Dry Silicon-Etching Techniques.”https://doi.org/10.1016/0167-9317(92)90420-v__Microelectronic Engineering 19, no. 1–4 (2002): 191–94.https://doi.org/10.1016/0167-9317(92)90420-v .

Horstmann, J.T., Ulrich Hilleringmann, and K.F. Goser. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.”https://doi.org/10.1109/16.658845__IEEE Transactions on Electron Devices 45, no. 1 (2002): 299–306.https://doi.org/10.1109/16.658845 .

Mankowski, V., Ulrich Hilleringmann, and K. Schumacher. “KV Low Current Cascaded Light Triggered Switch on One Silicon Chip.”https://doi.org/10.1016/s0167-9317(99)00122-7__Microelectronic Engineering 46, no. 1–4 (2002): 413–17.https://doi.org/10.1016/s0167-9317(99)00122-7 .

Horstmann, J.T., Ulrich Hilleringmann, and K.F. Goser. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.”https://doi.org/10.1109/16.658845__IEEE Transactions on Electron Devices 45, no. 1 (2002): 299–306.https://doi.org/10.1109/16.658845 .

Wirth, G, Ulrich Hilleringmann, J.T Horstmann, and K Goser. “Mesoscopic Transport Phenomena in Ultrashort Channel MOSFETs.”https://doi.org/10.1016/s0038-1101(99)00060-x__Solid-State Electronics 43, no. 7 (2002): 1245–50.https://doi.org/10.1016/s0038-1101(99)00060-x .

Otterbach, R., Ulrich Hilleringmann, T.J. Horstmann, and K. Goser. “Structures with a Minimum Feature Size of Less than 100 Nm in CVD-Diamond for Sensor Applications.”https://doi.org/10.1016/s0925-9635(01)00373-9__Diamond and Related Materials 10, no. 3–7 (2002): 511–14.https://doi.org/10.1016/s0925-9635(01)00373-9 .

Hilleringmann, Ulrich, T. Vieregge, and J.T. Horstmann. “A Structure Definition Technique for 25 Nm Lines of Silicon and Related Materials.”https://doi.org/10.1016/s0167-9317(00)00380-4__Microelectronic Engineering 53, no. 1–4 (2002): 569–72.https://doi.org/10.1016/s0167-9317(00)00380-4 .

Otterbach, R., and Ulrich Hilleringmann. “Reactive Ion Etching of CVD-Diamond for Piezoresistive Pressure Sensors.”https://doi.org/10.1016/s0925-9635(01)00703-8__Diamond and Related Materials 11, no. 3–6 (2002): 841–44.https://doi.org/10.1016/s0925-9635(01)00703-8 .

Mahnken, Rolf. “Strength Difference in Compression and Tension and Pressure Dependence of Yielding in Elasto-Plasticity.”https://doi.org/10.1016/s0045-7825(00)00364-9__Computer Methods in Applied Mechanics and Engineering 190, no. 39 (2002): 5057–80.https://doi.org/10.1016/s0045-7825(00)00364-9 .

Mahnken, Rolf, and P. Steinmann. “A Finite Element Algorithm for Parameter Identification of Material Models for Fluid Saturated Porous Media.”https://doi.org/10.1002/nag.136__International Journal for Numerical and Analytical Methods in Geomechanics 25, no. 5 (2002): 415–34.https://doi.org/10.1002/nag.136 .

Mahnken, Rolf, and M. Kohlmeier. “Finite Element Simulation for Rock Salt with Dilatancy Boundary Coupled to Fluid Permeation.”https://doi.org/10.1016/s0045-7825(00)00317-0__Computer Methods in Applied Mechanics and Engineering 190, no. 32–33 (2002): 4259–78.https://doi.org/10.1016/s0045-7825(00)00317-0 .

Mahnken, Rolf, D. Tikhomirov, and E. Stein. “Implicit Integration Scheme and Its Consistent Linearization for an Elastoplastic-Damage Model with Application to Concrete.”https://doi.org/10.1016/s0045-7949(99)00089-9__Computers &;amp; Structures 75, no. 2 (2002): 135–43.https://doi.org/10.1016/s0045-7949(99)00089-9 .

Mahnken, Rolf. “A Comprehensive Study of a Multiplicative Elastoplasticity Model Coupled to Damage Including Parameter Identification.”https://doi.org/10.1016/s0045-7949(98)00296-x__Computers &;amp; Structures 74, no. 2 (2002): 179–200.https://doi.org/10.1016/s0045-7949(98)00296-x .