Schönstein, I., J. Müller, Ulrich Hilleringmann, and K. Goser. “Characterization of Submicron NMOS Devices Due to Visible Light Emission.”https://doi.org/10.1016/0167-9317(93)90092-j__Microelectronic Engineering 21, no. 1–4 (2002): 363–66.https://doi.org/10.1016/0167-9317(93)90092-j .

Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.”https://doi.org/10.1016/0167-9317(92)90425-q__Microelectronic Engineering 19, no. 1–4 (2002): 211–14.https://doi.org/10.1016/0167-9317(92)90425-q .

Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “Characterisation of Sub-100 Nm-MOS-Transistors Processed by Optical Lithography and a Sidewall-Etchback Technique.”https://doi.org/10.1016/0167-9317(95)00280-4__Microelectronic Engineering 30, no. 1–4 (2002): 431–34.https://doi.org/10.1016/0167-9317(95)00280-4 .

Mankowski, V., Ulrich Hilleringmann, and K. Schumacher. “A Novel Insulation Technique for Smart Power Switching Devices and Very High Voltage ICs above 10 KV.”https://doi.org/10.1016/s0167-9317(00)00370-1__Microelectronic Engineering 53, no. 1–4 (2002): 525–28.https://doi.org/10.1016/s0167-9317(00)00370-1 .

Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “/f-Noise of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.”https://doi.org/10.1016/s0167-9317(00)00299-9__Microelectronic Engineering 53, no. 1–4 (2002): 213–16.https://doi.org/10.1016/s0167-9317(00)00299-9 .

Hilleringmann, Ulrich, K. Knospe, C. Heite, K. Schumacher, and K. Goser. “A Silicon Based Technology for Monolithic Integration of Waveguides and VLSI CMOS Circuits.”https://doi.org/10.1016/0167-9317(91)90231-2__Microelectronic Engineering 15, no. 1–4 (2002): 289–92.https://doi.org/10.1016/0167-9317(91)90231-2 .

Soennecken, A., Ulrich Hilleringmann, and K. Goser. “Floating Gate Structures as Nonvolatile Analog Memory Cells in 1.0;cm-LOCOS-CMOS Technology with PZT Dielectrica.”https://doi.org/10.1016/0167-9317(91)90299-s__Microelectronic Engineering 15, no. 1–4 (2002): 633–36.https://doi.org/10.1016/0167-9317(91)90299-s .

Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.”https://doi.org/10.1016/0167-9317(92)90425-q__Microelectronic Engineering 19, no. 1–4 (2002): 211–14.https://doi.org/10.1016/0167-9317(92)90425-q .

Adams, S., Ulrich Hilleringmann, and K. Goser. “CMOS Compatible Micromachining by Dry Silicon-Etching Techniques.”https://doi.org/10.1016/0167-9317(92)90420-v__Microelectronic Engineering 19, no. 1–4 (2002): 191–94.https://doi.org/10.1016/0167-9317(92)90420-v .

Horstmann, J.T., Ulrich Hilleringmann, and K.F. Goser. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.”https://doi.org/10.1109/16.658845__IEEE Transactions on Electron Devices 45, no. 1 (2002): 299–306.https://doi.org/10.1109/16.658845 .

Mankowski, V., Ulrich Hilleringmann, and K. Schumacher. “KV Low Current Cascaded Light Triggered Switch on One Silicon Chip.”https://doi.org/10.1016/s0167-9317(99)00122-7__Microelectronic Engineering 46, no. 1–4 (2002): 413–17.https://doi.org/10.1016/s0167-9317(99)00122-7 .

Horstmann, J.T., Ulrich Hilleringmann, and K.F. Goser. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.”https://doi.org/10.1109/16.658845__IEEE Transactions on Electron Devices 45, no. 1 (2002): 299–306.https://doi.org/10.1109/16.658845 .

Wirth, G, Ulrich Hilleringmann, J.T Horstmann, and K Goser. “Mesoscopic Transport Phenomena in Ultrashort Channel MOSFETs.”https://doi.org/10.1016/s0038-1101(99)00060-x__Solid-State Electronics 43, no. 7 (2002): 1245–50.https://doi.org/10.1016/s0038-1101(99)00060-x .

Otterbach, R., Ulrich Hilleringmann, T.J. Horstmann, and K. Goser. “Structures with a Minimum Feature Size of Less than 100 Nm in CVD-Diamond for Sensor Applications.”https://doi.org/10.1016/s0925-9635(01)00373-9__Diamond and Related Materials 10, no. 3–7 (2002): 511–14.https://doi.org/10.1016/s0925-9635(01)00373-9 .

Hilleringmann, Ulrich, T. Vieregge, and J.T. Horstmann. “A Structure Definition Technique for 25 Nm Lines of Silicon and Related Materials.”https://doi.org/10.1016/s0167-9317(00)00380-4__Microelectronic Engineering 53, no. 1–4 (2002): 569–72.https://doi.org/10.1016/s0167-9317(00)00380-4 .

Otterbach, R., and Ulrich Hilleringmann. “Reactive Ion Etching of CVD-Diamond for Piezoresistive Pressure Sensors.”https://doi.org/10.1016/s0925-9635(01)00703-8__Diamond and Related Materials 11, no. 3–6 (2002): 841–44.https://doi.org/10.1016/s0925-9635(01)00703-8 .

Glossmann, Jochen, Andreas Hoischen, Thorsten Roder, and Heinz-Siegfried Kitzerow. “Asymmetric Switching and Storage Effects in Ferroelectric and Antiferroelectric Gels and Polymers.”https://doi.org/10.1080/00150190008008011__Ferroelectrics 243, no. 1 (2000): 95–106.https://doi.org/10.1080/00150190008008011 .

Buey, Julio, Pablo Espinet, Heinz-Siegfried Kitzerow, and Jochen Strauss. “Metallomesogens Presenting Blue Phases in a Glassy State and in Metallomesogen/Nematic Mixtures.”https://doi.org/10.1039/a900374f__Chemical Communications, no. 5 (1999): 441–42.https://doi.org/10.1039/a900374f .

Kitzerow, Heinz-Siegfried, Andrew J. Slaney, and John W. Goodby. “Electric Field-Induced Transition from the Twist Grain Boundary TGB<sub>A</sub>Phase to the Tilted Smectic SmC* Phase.”https://doi.org/10.1080/00150199608007874__Ferroelectrics 179, no. 1 (1996): 61–80.https://doi.org/10.1080/00150199608007874 .

Kratzat, Krystyna, Claudia Schmidt, and Heino Finkelmann. “A Doubly Branched Nonionic Oligooxyethylene V-Amphiphile: Effect of Molecular Geometry on Liquid-Crystalline Phase Behavior, 3.”https://doi.org/10.1006/jcis.1994.1095__Journal of Colloid and Interface Science 163, no. 1 (1994): 190–98.https://doi.org/10.1006/jcis.1994.1095 .