1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique
J.T. Horstmann, U. Hilleringmann, K. Goser, Microelectronic Engineering 53 (2002) 213–216.
LibreCat: /record/39879
DOI: 10.1016/s0167-9317(00)00299-9

A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits
U. Hilleringmann, K. Knospe, C. Heite, K. Schumacher, K. Goser, Microelectronic Engineering 15 (2002) 289–292.
LibreCat: /record/39919
DOI: 10.1016/0167-9317(91)90231-2

VLSI technologies for artificial neural networks
K. Goser, U. Hilleringmann, U. Rueckert, K. Schumacher, IEEE Micro 9 (2002) 28–44.
LibreCat: /record/39926
DOI: 10.1109/40.42985

Floating gate structures as nonvolatile analog memory cells in 1.0;cm-LOCOS-CMOS technology with PZT dielectrica
A. Soennecken, U. Hilleringmann, K. Goser, Microelectronic Engineering 15 (2002) 633–636.
LibreCat: /record/39920
DOI: 10.1016/0167-9317(91)90299-s

Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon
U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 211–214.
LibreCat: /record/39915
DOI: 10.1016/0167-9317(92)90425-q

CMOS compatible micromachining by dry silicon-etching techniques
S. Adams, U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 191–194.
LibreCat: /record/39916
DOI: 10.1016/0167-9317(92)90420-v

Matching analysis of deposition defined 50-nm MOSFET's
J.T. Horstmann, U. Hilleringmann, K.F. Goser, IEEE Transactions on Electron Devices 45 (2002) 299–306.
LibreCat: /record/39348
DOI: 10.1109/16.658845

12 kV low current cascaded light triggered switch on one silicon chip
V. Mankowski, U. Hilleringmann, K. Schumacher, Microelectronic Engineering 46 (2002) 413–417.
LibreCat: /record/39889
DOI: 10.1016/s0167-9317(99)00122-7

Matching analysis of deposition defined 50-nm MOSFET's
J.T. Horstmann, U. Hilleringmann, K.F. Goser, IEEE Transactions on Electron Devices 45 (2002) 299–306.
LibreCat: /record/39891
DOI: 10.1109/16.658845

Mesoscopic transport phenomena in ultrashort channel MOSFETs
G. Wirth, U. Hilleringmann, J.T. Horstmann, K. Goser, Solid-State Electronics 43 (2002) 1245–1250.
LibreCat: /record/39886
DOI: 10.1016/s0038-1101(99)00060-x

Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications
R. Otterbach, U. Hilleringmann, T.J. Horstmann, K. Goser, Diamond and Related Materials 10 (2002) 511–514.
LibreCat: /record/39876
DOI: 10.1016/s0925-9635(01)00373-9

A structure definition technique for 25 nm lines of silicon and related materials
U. Hilleringmann, T. Vieregge, J.T. Horstmann, Microelectronic Engineering 53 (2002) 569–572.
LibreCat: /record/39877
DOI: 10.1016/s0167-9317(00)00380-4

Reactive ion etching of CVD-diamond for piezoresistive pressure sensors
R. Otterbach, U. Hilleringmann, Diamond and Related Materials 11 (2002) 841–844.
LibreCat: /record/39874
DOI: 10.1016/s0925-9635(01)00703-8

Strength difference in compression and tension and pressure dependence of yielding in elasto-plasticity
R. Mahnken, Computer Methods in Applied Mechanics and Engineering 190 (2002) 5057–5080.
LibreCat: /record/45307
DOI: 10.1016/s0045-7825(00)00364-9

A finite element algorithm for parameter identification of material models for fluid saturated porous media
R. Mahnken, P. Steinmann, International Journal for Numerical and Analytical Methods in Geomechanics 25 (2002) 415–434.
LibreCat: /record/45413
DOI: 10.1002/nag.136

Finite element simulation for rock salt with dilatancy boundary coupled to fluid permeation
R. Mahnken, M. Kohlmeier, Computer Methods in Applied Mechanics and Engineering 190 (2002) 4259–4278.
LibreCat: /record/45412
DOI: 10.1016/s0045-7825(00)00317-0

Implicit integration scheme and its consistent linearization for an elastoplastic-damage model with application to concrete
R. Mahnken, D. Tikhomirov, E. Stein, Computers &;amp; Structures 75 (2002) 135–143.
LibreCat: /record/45418
DOI: 10.1016/s0045-7949(99)00089-9

Improved implementation of an algorithm for non-linear isotropic/kinematic hardening in elastoplasticity
R. Mahnken, Communications in Numerical Methods in Engineering 15 (2002) 745–754.
LibreCat: /record/45423
DOI: 10.1002/(sici)1099-0887(199910)15:10<745::aid-cnm288>3.0.co;2-r

Numerical simulation of interface debonding with a combined damage/friction constitutive model
C. Döbert, R. Mahnken, E. Stein, Computational Mechanics 25 (2002) 456–467.
LibreCat: /record/45417
DOI: 10.1007/s004660050493

A comprehensive study of a multiplicative elastoplasticity model coupled to damage including parameter identification
R. Mahnken, Computers &;amp; Structures 74 (2002) 179–200.
LibreCat: /record/45422
DOI: 10.1016/s0045-7949(98)00296-x