Bopp F, Schall J, Bart N, et al. Coherent driving of direct and indirect excitons in a quantum dot molecule. Physical Review B. 2023;107(16). doi:10.1103/physrevb.107.165426
LibreCat: /record/46133
DOI: 10.1103/physrevb.107.165426

Littmann M, Reuter D, As DJ. Remote Epitaxy of Cubic Gallium Nitride on GrapheneCovered 3CSiC Substrates by PlasmaAssisted Molecular Beam Epitaxy. physica status solidi (b). 2023;260(7). doi:10.1002/pssb.202300034
LibreCat: /record/46132
DOI: 10.1002/pssb.202300034

Feddersen S, Zolatanosha V, Alshaikh A, Reuter D, Heyn C. Modeling of Masked Droplet Deposition for Site-Controlled Ga Droplets. Nanomaterials. 2023;13(3). doi:10.3390/nano13030466
LibreCat: /record/46278
DOI: 10.3390/nano13030466

Bauer A, Woitkowski D, Reuter D, Reinhold P. Fachliche und überfachliche Herausforderungen in der Studieneingangsphase Physik. In: Fahr U, Kenner A, Angenent H, Eßer-Lüghausen A, eds. Hochschullehre erforschen. . Diversität und Bildung im digitalen Zeitalter. Springer Fachmedien; 2022:339-362. doi:10.1007/978-3-658-34185-5_19
LibreCat: /record/29789
DOI: 10.1007/978-3-658-34185-5_19

Riedl T, Kunnathully VS, Trapp A, Langer T, Reuter D, Lindner JKN. SizeDependent Strain Relaxation in InAs Quantum Dots on Top of GaAs(111)A Nanopillars. Advanced Materials Interfaces. Published online 2022. doi:10.1002/admi.202102159
LibreCat: /record/30743
DOI: 10.1002/admi.202102159

Kobecki M, Scherbakov AV, Kukhtaruk SM, et al. Giant Photoelasticity of Polaritons for Detection of Coherent Phonons in a Superlattice with Quantum Sensitivity. Physical Review Letters. 2022;128(15). doi:10.1103/physrevlett.128.157401
LibreCat: /record/30880
DOI: 10.1103/physrevlett.128.157401

Henksmeier T, Schulz JF, Kluth E, et al. Remote epitaxy of InxG-xAs (0 0 1) on graphene covered GaAs(0 0 1) substrates. Journal of Crystal Growth. 2022;593. doi:10.1016/j.jcrysgro.2022.126756
LibreCat: /record/32108
DOI: 10.1016/j.jcrysgro.2022.126756

Verma AK, Bopp F, Finley JJ, Jonas B, Zrenner A, Reuter D. Low Areal Densities of InAs Quantum Dots on GaAs(100) Prepared by Molecular Beam Epitaxy. Journal of Crystal Growth. Published online 2022. doi:10.1016/j.jcrysgro.2022.126715
LibreCat: /record/31241
DOI: 10.1016/j.jcrysgro.2022.126715

Kobecki M, Scherbakov AV, Kukhtaruk SM, et al. Giant Photoelasticity of Polaritons for Detection of Coherent Phonons in a Superlattice with Quantum Sensitivity. Physical Review Letters. 2022;128(15). doi:10.1103/physrevlett.128.157401
LibreCat: /record/31541
DOI: 10.1103/physrevlett.128.157401

Bopp F, Rojas J, Revenga N, et al. Quantum Dot Molecule Devices with Optical Control of Charge Status and Electronic Control of Coupling. Advanced Quantum Technologies. Published online 2022. doi:10.1002/qute.202200049
LibreCat: /record/33332
DOI: 10.1002/qute.202200049

Meier F, Littmann M, Bürger J, et al. Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks. physica status solidi (b). Published online 2022. doi:10.1002/pssb.202200508
LibreCat: /record/35232
DOI: 10.1002/pssb.202200508

Riedl T, Kunnathully VS, Verma AK, et al. Selective area heteroepitaxy of InAs nanostructures on nanopillar-patterned GaAs(111)A. Journal of Applied Physics. 2022;132(18). doi:10.1063/5.0121559
LibreCat: /record/34056
DOI: 10.1063/5.0121559

Riedl T, Kunnathully V, Trapp A, Langer T, Reuter D, Lindner J. SizeDependent Strain Relaxation in InAs Quantum Dots on Top of GaAs(111)A Nanopillars. Advanced Materials Interfaces. 2022;9(11). doi:10.1002/admi.202102159
LibreCat: /record/34053
DOI: 10.1002/admi.202102159

Henksmeier T, Schulz JF, Kluth E, et al. Remote epitaxy of In(x)Ga(1-x)As(001) on graphene covered GaAs(001) substrates. Journal of Crystal Growth. 2022;593. doi:10.1016/j.jcrysgro.2022.126756
LibreCat: /record/36804
DOI: 10.1016/j.jcrysgro.2022.126756

Sartison M,https://doi.org/10.1088/2633-4356/ac6f3e__Camacho Ibarra O, Jöns KD, Caltzidis I, Reuter D. Scalable integration of quantum emitters into photonic integrated circuits. 2022;2. doi:https://doi.org/10.1088/2633-4356/ac6f3e
LibreCat: /record/41800
DOI: https://doi.org/10.1088/2633-4356/ac6f3e

Jonas B, Heinze DF, Schöll E, et al. Nonlinear down-conversion in a single quantum dot. Nature Communications. 2022;13(1). doi:10.1038/s41467-022-28993-3
LibreCat: /record/40523
DOI: 10.1038/s41467-022-28993-3

Jonas B, Heinze DF, Schöll E, et al. Nonlinear Down-Conversion in a Single Quantum Dot. LibreCat University; 2022. doi:10.5281/ZENODO.6024228
LibreCat: /record/40428
DOI: 10.5281/ZENODO.6024228

Henksmeier T, Eppinger M, Reineke B, Zentgraf T, Meier C, Reuter D. Selective Etching of (111)B-Oriented AlxGxAs-Layers for Epitaxial Lift-Off. physica status solidi (a). 2021;218(3):2000408. doi:https://doi.org/10.1002/pssa.202000408
LibreCat: /record/20592
DOI: https://doi.org/10.1002/pssa.202000408

Meier F, Protte M, Baron E, et al. Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001). AIP Advances. 2021. doi:10.1063/5.0053865
LibreCat: /record/22533
DOI: 10.1063/5.0053865

Evers E, Kopteva NE, Yugova IA, et al. Suppression of nuclear spin fluctuations in an InGaAs quantum dot ensemble by GHz-pulsed optical excitation. npj Quantum Information. 2021. doi:10.1038/s41534-021-00395-1
LibreCat: /record/22003
DOI: 10.1038/s41534-021-00395-1