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Angerhausen, J., Bayer, C., &; Hehenkamp, B. (2010). Strategic Unemployment. Journal of Institutional and Theoretical Economics (JITE), 166(3), 439–461.
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Grodecka-Grad, A., &; Förstner, J. (2010). Theory of phonon-mediated relaxation in doped quantum dot molecules. Physical Review B, 81(11).https://doi.org/10.1103/physrevb.81.115305 
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Tschumak, E., Granzner, R., Lindner, J., Schwierz, F., Lischka, K., Nagasawa, H.,https://doi.org/10.1063/1.3455066__As, D. (2010). Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001). Applied Physics Letters, 96(25).https://doi.org/10.1063/1.3455066 
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Zdravkov, V. I., Kehrle, J., Obermeier, G., Gsell, S., Schreck, M., Müller, C.,https://doi.org/10.1103/physrevb.82.054517__Tagirov, L. R. (2010). Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers. Physical Review B, 82(5).https://doi.org/10.1103/physrevb.82.054517 
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Zhu, T., Johnston, C. F., Häberlen, M., Kappers, M. J., &; Oliver, R. A. (2010). Characterization of unintentional doping in nonpolar GaN. Journal of Applied Physics, 107(2).https://doi.org/10.1063/1.3284944 
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Zirkelbach, F., Stritzker, B., Nordlund, K., Lindner, J., Schmidt, W. G., &; Rauls, E. (2010). Defects in carbon implanted silicon calculated by classical potentials and first-principles methods. Physical Review B, 82(9).https://doi.org/10.1103/physrevb.82.094110 
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Lindner, J. (2010). Advanced topics and applications of Transmission Electron Microscopy, Part I-II. Presented at the Guest Lectures at Departamento de Fisica Applicada, Master de Materiales Avanzados y Nanotecnologias , Universidad Autónoma de Madrid (Spain).
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Ila, D., Kishimoto, N., Lindner, J., &; Baglin, J. (Eds.). (2010). Ion Beams and Nano-Engineering (Vol. 1181). Presented at the MRS Spring Meeting 2009, San Francisco (USA): MRS Symposium Proceedings .
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Häberlen, M., Zhu, D., McAleese, C., Kappers, M. J., &; Humphreys, C. J. (2010). Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers. Journal of Physics: Conference Series, 209.https://doi.org/10.1088/1742-6596/209/1/012017 
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