Dependability Analysis of the Degradation Behavior of Mechatronics Systems with Different Operating Strategies
O. Lurie, I. Kromov, A. Trächtler, C. Sondermann-Wölke, W. Sextro, in: 25. Tagung Technische Zuverlässigkeit (TTZ 2011) - Entwicklung Und Betrieb Zuverlässiger Produkte, Leonberg, 2011, pp. 99–110.

Improved Process for Hydrothermal Lead-Free Piezoelectric Powders and Performances of Sintered (K0.48N.52)NbO3 Ceramics
T. Maeda, T. Hemsel, T. Morita, Japanese Journal of Applied Physics 50 (2011) 07H.

Component-based Hazard Analysis for Mechatronic Systems
C. Priesterjahn, C. Sondermann-Wölke, M. Tichy, C. Hölscher, in: Proc. of the 2nd IEEE International Workshop MoBE-RTES at the 14th IEEE International Symposium on Object/Component/Service-Oriented Real-Time Distributed Computing (ISORC), IEEE Computer Society, Newport Beach, USA (USA), 2011.

Zuverlässigkeitsorientierte Mehrzieloptimierung zur Aktorrekonfiguration eines X-by-wire-Fahrzeugs
C. Sondermann-Wölke, W. Sextro, P. Reinold, A. Trächtler, in: 25. Tagung Technische Zuverlässigkeit (TTZ 2011) - Entwicklung Und Betrieb Zuverlässiger Produkte, Leonberg, 2011, pp. 291–302.

Friction in wheel--rail contact: A model comprising interfacial fluids, surface roughness and temperature
C. Tomberger, P. Dietmaier, W. Sextro, K. Six, Wear 271 (2011) 2–12.

High temperature tolerant transducer for Ultrasonic Assisted Hydrothermal Method
G. Isobe, P. Bornmann, T. Hemsel, T. Morita, Proceedings of Symposium on Ultrasonic Electronics 32 (2011) 19–20.

Narrative in Drama
M. Tönnies, C. Flotmann, eds., Narrative in Drama, WVT, Trier, 2011.

Phonon-assisted decoherence and tunneling in quantum dot molecules
A. Grodecka-Grad, J. Förstner, Physica Status Solidi (C) 8 (2011) 1125–1128.

Relaxation of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion beam defect engineering
M. Häberlen, B. Murphy, B. Stritzker, J. Lindner, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 272 (2011) 322–325.

Decoupling of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion implantation
M. Häberlen, B. Murphy, B. Stritzker, J. Lindner, Physica Status Solidi (C) 8 (2011) 944–947.