X. Feng, J. Rützel, and H.-H. Kremer, Eds., Standardization, professionalization and the measurements. Shanghai, 2013.
LibreCat: /record/6986

F.-Y. Lo et al., “Evidences of defect contribution in magnetically ordered Sm-implanted GaN,” Current Applied Physics, vol. 14, pp. –, 2013.
LibreCat: /record/7236
DOI: 10.1016/j.cap.2013.11.051

A. Steinhoff et al., “Combined influence of Coulomb interaction and polarons on the carrier dynamics in InGaAs quantum dots,” Physical Review B, vol. 88, no. 20, 2013.
LibreCat: /record/7239
DOI: 10.1103/physrevb.88.205309

T. Henn, T. Kiessling, W. Ossau, L. W. Molenkamp, D. Reuter, and A. D. Wieck, “Picosecond real-space imaging of electron spin diffusion in GaAs,” Physical Review B, vol. 88, no. 19, 2013.
LibreCat: /record/7240
DOI: 10.1103/physrevb.88.195202

T. Henn et al., “Hot carrier effects on the magneto-optical detection of electron spins in GaAs,” Physical Review B, vol. 88, no. 8, 2013.
LibreCat: /record/7258
DOI: 10.1103/physrevb.88.085303

J. H. Buß et al., “Magneto-optical studies of Gd-implanted GaN: No spin alignment of conduction band electrons,” Applied Physics Letters, vol. 103, no. 9, 2013.
LibreCat: /record/7259
DOI: 10.1063/1.4819767

D. J. Carrad et al., “The effect of (N)2Sxpassivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices,” Journal of Physics: Condensed Matter, vol. 25, no. 32, 2013.
LibreCat: /record/7260
DOI: 10.1088/0953-8984/25/32/325304

H. Höpfner et al., “Spin relaxation length in quantum dot spin LEDs,” physica status solidi (c), vol. 10, no. 9, pp. 1214–1217, 2013.
LibreCat: /record/7261
DOI: 10.1002/pssc.201200689

J. H. Prechtel et al., “Frequency-Stabilized Source of Single Photons from a Solid-State Qubit,” Physical Review X, vol. 3, no. 4, 2013.
LibreCat: /record/7262
DOI: 10.1103/physrevx.3.041006

G. Moody et al., “Biexcitons in semiconductor quantum dot ensembles,” physica status solidi (b), vol. 250, no. 9, pp. 1753–1759, 2013.
LibreCat: /record/7263
DOI: 10.1002/pssb.201200725