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Höpfner H, Fritsche C, Ludwig A, et al. Spin injection, transport, and relaxation in spin light-emitting diodes: magnetic field effects. In: Drouhin H-J, Wegrowe J-E, Razeghi M, eds. Spintronics VI. SPIE; 2013. doi:10.1117/12.2023324
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Höpfner H, Fritsche C, Ludwig A, et al. Spin relaxation length in quantum dot spin LEDs. physica status solidi (c). 2013;10(9):1214-1217. doi:10.1002/pssc.201200689
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Schuster J, Kim TY, Batke E, Reuter D, Wieck AD. Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures. Semiconductor Science and Technology. 2013;28(8). doi:10.1088/0268-1242/28/8/085012
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Kuznetsova MS, Flisinski K, Gerlovin IY, et al. Hanle effect in (In,Ga)As quantum dots: Role of nuclear spin fluctuations. Physical Review B. 2013;87(23). doi:10.1103/physrevb.87.235320
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Komijani Y, Csontos M, Ihn T, et al. Origins of conductance anomalies in ap-type GaAs quantum point contact. Physical Review B. 2013;87(24). doi:10.1103/physrevb.87.245406
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Bussone G, Schott R, Biermanns A, et al. Grazing-incidence X-ray diffraction of single GaAs nanowires at locations defined by focused ion beams. Journal of Applied Crystallography. 2013;46(4):887-892. doi:10.1107/s0021889813004226
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Wang DQ, Chen JCH, Klochan O, et al. Influence of surface states on quantum and transport lifetimes in high-quality undoped heterostructures. Physical Review B. 2013;87(19). doi:10.1103/physrevb.87.195313
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Klochan O, Micolich AP, Hamilton AR, et al. Scaling of the Kondo zero-bias peak in a hole quantum dot at finite temperatures. Physical Review B. 2013;87(20). doi:10.1103/physrevb.87.201104
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Henn T, Heckel A, Beck M, et al. Hot carrier effects on the magneto-optical detection of electron spins in GaAs. Physical Review B. 2013;88(8). doi:10.1103/physrevb.88.085303
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Schinner GJ, Repp J, Schubert E, et al. Many-body correlations of electrostatically trapped dipolar excitons. Physical Review B. 2013;87(20). doi:10.1103/physrevb.87.205302
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Zapasskii VS, Greilich A, Crooker SA, et al. Optical Spectroscopy of Spin Noise. Physical Review Letters. 2013;110(17). doi:10.1103/physrevlett.110.176601
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Schinner GJ, Repp J, Schubert E, et al. Confinement and Interaction of Single Indirect Excitons in a Voltage-Controlled Trap Formed Inside Double InGaAs Quantum Wells. Physical Review Letters. 2013;110(12). doi:10.1103/physrevlett.110.127403
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Varwig S, René A, Greilich A, et al. Temperature dependence of hole spin coherence in (In,Ga)As quantum dots measured by mode-locking and echo techniques. Physical Review B. 2013;87(11). doi:10.1103/physrevb.87.115307
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Nichele F, Komijani Y, Hennel S, et al. Aharonov–Bohm rings with strong spin–orbit interaction: the role of sample-specific properties. New Journal of Physics. 2013;15(3). doi:10.1088/1367-2630/15/3/033029
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Koop EJ, Iqbal MJ, Limbach F, et al. On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlxGxAs heterostructures. Semiconductor Science and Technology. 2013;28(2). doi:10.1088/0268-1242/28/2/025006
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Moody G, Singh R, Li H, et al. Correlation and dephasing effects on the non-radiative coherence between bright excitons in an InAs QD ensemble measured with 2D spectroscopy. Solid State Communications. 2013;163:65-69. doi:10.1016/j.ssc.2013.03.025
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Komijani Y, Csontos M, Shorubalko I, et al. Anisotropic Zeeman shift in p-type GaAs quantum point contacts. EPL (Europhysics Letters). 2013;102(3). doi:10.1209/0295-5075/102/37002
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Moody G, Singh R, Li H, et al. Fifth-order nonlinear optical response of excitonic states in an InAs quantum dot ensemble measured with two-dimensional spectroscopy. Physical Review B. 2013;87(4). doi:10.1103/physrevb.87.045313
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Moody G, Singh R, Li H, et al. Confinement Effects on Biexciton Binding in Semiconductor Quantum Dots Measured with 2D Coherent Spectroscopy. In: CLEO: 2013. OSA; 2013. doi:10.1364/cleo_qels.2013.qm4b.2
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