@article{7225,
  author       = {{Schüler, B. and Cerchez, M. and Xu, Hengyi and Schluck, J. and Heinzel, T. and Reuter, Dirk and Wieck, A. D.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{20}},
  publisher    = {{American Physical Society (APS)}},
  title        = {{{Observation of quantum states without a semiclassical equivalence bound by a magnetic field gradient}}},
  doi          = {{10.1103/physrevb.90.201111}},
  volume       = {{90}},
  year         = {{2014}},
}

@article{7226,
  author       = {{Debus, J. and Sapega, V. F. and Dunker, D. and Yakovlev, D. R. and Reuter, Dirk and Wieck, A. D. and Bayer, M.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{23}},
  publisher    = {{American Physical Society (APS)}},
  title        = {{{Spin-flip Raman scattering of the resident electron in singly charged (In,Ga)As/GaAs quantum dot ensembles}}},
  doi          = {{10.1103/physrevb.90.235404}},
  volume       = {{90}},
  year         = {{2014}},
}

@article{7227,
  author       = {{Varwig, S. and Evers, E. and Greilich, A. and Yakovlev, D. R. and Reuter, Dirk and Wieck, A. D. and Bayer, M.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{12}},
  publisher    = {{American Physical Society (APS)}},
  title        = {{{All-optical implementation of a dynamic decoupling protocol for hole spins in (In,Ga)As quantum dots}}},
  doi          = {{10.1103/physrevb.90.121306}},
  volume       = {{90}},
  year         = {{2014}},
}

@article{7228,
  author       = {{Varwig, S. and Yugova, I. A. and René, A. and Kazimierczuk, T. and Greilich, A. and Yakovlev, D. R. and Reuter, Dirk and Wieck, A. D. and Bayer, M.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{12}},
  publisher    = {{American Physical Society (APS)}},
  title        = {{{Excitation of complex spin dynamics patterns in a quantum-dot electron spin ensemble}}},
  doi          = {{10.1103/physrevb.90.121301}},
  volume       = {{90}},
  year         = {{2014}},
}

@article{7230,
  author       = {{Henn, Tobias and Kießling, Tobias and Molenkamp, Laurens W. and Reuter, Dirk and Wieck, Andreas D. and Biermann, Klaus and Santos, Paulo V. and Ossau, Wolfgang}},
  issn         = {{0370-1972}},
  journal      = {{physica status solidi (b)}},
  number       = {{9}},
  pages        = {{1839--1849}},
  publisher    = {{Wiley}},
  title        = {{{Time and spatially resolved electron spin detection in semiconductor heterostructures by magneto-optical Kerr microscopy}}},
  doi          = {{10.1002/pssb.201350192}},
  volume       = {{251}},
  year         = {{2014}},
}

@article{7231,
  author       = {{Kim, Y.M. and Sleiter, D. and Sanaka, K. and Reuter, Dirk and Lischka, K. and Yamamoto, Y. and Pawlis, A.}},
  issn         = {{1567-1739}},
  journal      = {{Current Applied Physics}},
  number       = {{9}},
  pages        = {{1234--1239}},
  publisher    = {{Elsevier BV}},
  title        = {{{Optically controlled initialization and read-out of an electron spin bound to a fluorine donor in ZnSe}}},
  doi          = {{10.1016/j.cap.2014.06.017}},
  volume       = {{14}},
  year         = {{2014}},
}

@article{7232,
  author       = {{Lo, Fang-Yuh and Huang, Cheng-De and Chou, Kai-Chieh and Guo, Jhong-Yu and Liu, Hsiang-Lin and Ney, Verena and Ney, Andreas and Shvarkov, Stepan and Pezzagna, Sébastien and Reuter, Dirk and Chia, Chi-Ta and Chern, Ming-Yau and Wieck, Andreas D. and Massies, Jean}},
  issn         = {{0021-8979}},
  journal      = {{Journal of Applied Physics}},
  number       = {{4}},
  publisher    = {{AIP Publishing}},
  title        = {{{Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films}}},
  doi          = {{10.1063/1.4891226}},
  volume       = {{116}},
  year         = {{2014}},
}

@article{7233,
  author       = {{Carrad, D. J. and Burke, A. M. and Klochan, O. and See, A. M. and Hamilton, A. R. and Rai, A. and Reuter, Dirk and Wieck, A. D. and Micolich, A. P.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{15}},
  publisher    = {{American Physical Society (APS)}},
  title        = {{{Determining the stability and activation energy of Si acceptors in AlGaAs using quantum interference in an open hole quantum dot}}},
  doi          = {{10.1103/physrevb.89.155313}},
  volume       = {{89}},
  year         = {{2014}},
}

@article{7234,
  author       = {{Kuznetsova, M. S. and Flisinski, K. and Gerlovin, I. Ya. and Petrov, M. Yu. and Ignatiev, I. V. and Verbin, S. Yu. and Yakovlev, D. R. and Reuter, Dirk and Wieck, A. D. and Bayer, M.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{12}},
  publisher    = {{American Physical Society (APS)}},
  title        = {{{Nuclear magnetic resonances in (In,Ga)As/GaAs quantum dots studied by resonant optical pumping}}},
  doi          = {{10.1103/physrevb.89.125304}},
  volume       = {{89}},
  year         = {{2014}},
}

@article{7235,
  author       = {{Varwig, S. and René, A. and Economou, Sophia E. and Greilich, A. and Yakovlev, D. R. and Reuter, Dirk and Wieck, A. D. and Reinecke, T. L. and Bayer, M.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{8}},
  publisher    = {{American Physical Society (APS)}},
  title        = {{{All-optical tomography of electron spins in (In,Ga)As quantum dots}}},
  doi          = {{10.1103/physrevb.89.081310}},
  volume       = {{89}},
  year         = {{2014}},
}

@article{7237,
  author       = {{Labud, P. A. and Ludwig, A. and Wieck, A. D. and Bester, G. and Reuter, Dirk}},
  issn         = {{0031-9007}},
  journal      = {{Physical Review Letters}},
  number       = {{4}},
  publisher    = {{American Physical Society (APS)}},
  title        = {{{Direct Quantitative Electrical Measurement of Many-Body Interactions in Exciton Complexes in InAs Quantum Dots}}},
  doi          = {{10.1103/physrevlett.112.046803}},
  volume       = {{112}},
  year         = {{2014}},
}

@article{7238,
  author       = {{Bürger, M. and Callsen, G. and Kure, T. and Hoffmann, A. and Pawlis, A. and Reuter, Dirk and As, D. J.}},
  issn         = {{1862-6351}},
  journal      = {{physica status solidi (c)}},
  number       = {{3-4}},
  pages        = {{790--793}},
  publisher    = {{Wiley}},
  title        = {{{Non-polar GaN quantum dots integrated into high quality cubic AlN microdisks}}},
  doi          = {{10.1002/pssc.201300411}},
  volume       = {{11}},
  year         = {{2014}},
}

@inproceedings{8554,
  author       = {{Liebendörfer, Michael and Hochmuth, Reinhard and Kolter, Jana and Schukajlow, Stanislaw}},
  booktitle    = {{Proceedings of the 38th Conference of the International Group for the Psychology of Mathematics Education an the 36th Conference of the North American Chapter of the Psychology of Mathematics Education}},
  editor       = {{Nicol, C. and Oesterle, S. and Liljedahl, Peter and Allan, D.}},
  pages        = {{153}},
  publisher    = {{PME}},
  title        = {{{The Mathematical Beliefs and Interest Development of Pre-Service Primary Teachers}}},
  volume       = {{6}},
  year         = {{2014}},
}

@inbook{9583,
  author       = {{Beutner, Marc and Zoyke, A}},
  booktitle    = {{Arbeit der Zukunft – Zukunft der Arbeit}},
  editor       = {{Brucherseifer, M and Münk, D and Walter, M}},
  pages        = {{187 -- 197}},
  title        = {{{Individuelle Bildungsgangarbeit als Antwort auf Fachkräftebedarf und Qualifikationsveränderungen}}},
  year         = {{2014}},
}

@inproceedings{397,
  abstract     = {{We present a factor $14D^2$ approximation algorithm for the minimum linear arrangement problem on series-parallel graphs, where $D$ is the maximum degree in the graph. Given a suitable decomposition of the graph, our algorithm runs in time $O(|E|)$ and is very easy to implement. Its divide-and-conquer approach allows for an effective parallelization. Note that a suitable decomposition can also be computed in time $O(|E|\log{|E|})$ (or even $O(\log{|E|}\log^*{|E|})$ on an EREW PRAM using $O(|E|)$ processors). For the proof of the approximation ratio, we use a sophisticated charging method that uses techniques similar to amortized analysis in advanced data structures. On general graphs, the minimum linear arrangement problem is known to be NP-hard. To the best of our knowledge, the minimum linear arrangement problem on series-parallel graphs has not been studied before.}},
  author       = {{Scheideler, Christian and Eikel, Martina and Setzer, Alexander}},
  booktitle    = {{Proceedings of the 12th Workshop on Approximation and Online Algorithms (WAOA)}},
  pages        = {{168----180}},
  title        = {{{Minimum Linear Arrangement of Series-Parallel Graphs}}},
  year         = {{2014}},
}

@inproceedings{4068,
  author       = {{Kemper, R.M. and Kovacs, A.  and Riedl, Thomas and Meertens, D. and Tillmann, K. and As, D. and Lindner, Jörg}},
  location     = {{Lille (France)}},
  title        = {{{Influence of growth area reduction on cubic GaN heteroepitaxial layer growth on 3C-SiC(001)}}},
  year         = {{2014}},
}

@inproceedings{4069,
  author       = {{Kemper, R.M. and Veit, P. and Mietze, C.  and Dempewolf, A. and Wecker, T.  and Christen, J. and As, D. and Lindner, Jörg}},
  location     = {{Lille (France)}},
  title        = {{{STEM-CL investigations on the influence of stacking faults on the optical emission of cubic GaN epilayers and cubic GaN/AlN multi-quantum wells}}},
  year         = {{2014}},
}

@article{4070,
  abstract     = {{We report for the first time on the growth of cubic AlN/GaN multi‐quantum wells (MQWs) on pre‐patterned 3C‐SiC/Si (001) substrates. The sample structure consists of 10 periods of 2 nm c‐AlN barriers with a 4 nm c‐GaN layer in between, which were grown on 3C‐SiC post shaped structures by means of molecular beam epitaxy. Substrate patterning has been realized by electron beam lithography and a reactive ion etching process. The 3C‐SiC posts have a length of about 550 nm and a height of about 700 nm. (Scanning) transmission electron microscopy studies show that the morphology of the MQWs is clearly influenced by {111} stacking faults, modulating the local growth rate. Further, the growth at the edges of the surface pattern is investigated. The MQW layers cover the 90° edges by developing low‐index facets rather than by forming a conformal system of 90° angled layers. }},
  author       = {{Kemper, R. M. and Mietze, C. and Hiller, L. and Stauden, T. and Pezoldt, J. and Meertens, D. and Luysberg, M. and As, D. J. and Lindner, Jörg}},
  issn         = {{1862-6351}},
  journal      = {{physica status solidi (c)}},
  number       = {{2}},
  pages        = {{265--268}},
  publisher    = {{Wiley}},
  title        = {{{Cubic GaN/AlN multi-quantum wells grown on pre-patterned 3C-SiC/Si (001)}}},
  doi          = {{10.1002/pssc.201300292}},
  volume       = {{11}},
  year         = {{2014}},
}

@inproceedings{4078,
  author       = {{Riedl, Thomas and Kovács, A. and Meertens, D. and Lindner, Jörg}},
  location     = {{Warsaw (Poland)}},
  title        = {{{Structure and surface chemistry analysis of ultra-thin reactive ion etched GaAs (111) nanopillars}}},
  year         = {{2014}},
}

@inproceedings{4079,
  author       = {{Rüsing, M. and Merten, L. and Reinert, P. and Rogalla, D. and Becker, H.-W. and Lindner, Jörg}},
  location     = {{Paderborn}},
  title        = {{{RBS of gold-coated polystyrene nanospheres}}},
  year         = {{2014}},
}