@article{7987,
  author       = {{Marquardt, Bastian and Geller, Martin and Lorke, Axel and Reuter, Dirk and Wieck, Andreas D.}},
  issn         = {{1386-9477}},
  journal      = {{Physica E: Low-dimensional Systems and Nanostructures}},
  number       = {{10}},
  pages        = {{2598--2601}},
  publisher    = {{Elsevier BV}},
  title        = {{{A two-dimensional electron gas as a sensitive detector to observe the charge carrier dynamics of self-assembled QDs}}},
  doi          = {{10.1016/j.physe.2010.02.010}},
  volume       = {{42}},
  year         = {{2010}},
}

@article{7989,
  author       = {{Kreisbeck, Christoph and Kramer, Tobias and Buchholz, Sven S. and Fischer, Saskia F. and Kunze, Ulrich and Reuter, Dirk and Wieck, Andreas D.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{16}},
  publisher    = {{American Physical Society (APS)}},
  title        = {{{Phase shifts and phaseπjumps in four-terminal waveguide Aharonov-Bohm interferometers}}},
  doi          = {{10.1103/physrevb.82.165329}},
  volume       = {{82}},
  year         = {{2010}},
}

@article{7990,
  author       = {{Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos, S. and Zrenner, A. and Meier, C.}},
  issn         = {{0003-6951}},
  journal      = {{Applied Physics Letters}},
  number       = {{14}},
  publisher    = {{AIP Publishing}},
  title        = {{{An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode}}},
  doi          = {{10.1063/1.3488812}},
  volume       = {{97}},
  year         = {{2010}},
}

@article{7991,
  author       = {{Reuter, Dirk and Roescu, R and Zeitler, U and Maan, J C and Wieck, A D}},
  issn         = {{1742-6596}},
  journal      = {{Journal of Physics: Conference Series}},
  publisher    = {{IOP Publishing}},
  title        = {{{Capacitance-voltage spectroscopy on InAs quantum dot valence band states in tilted magnetic fields}}},
  doi          = {{10.1088/1742-6596/245/1/012043}},
  volume       = {{245}},
  year         = {{2010}},
}

@article{7992,
  author       = {{Rizo, P J and Pugzlys, A and Slachter, A and Denega, S Z and Reuter, Dirk and Wieck, A D and van Loosdrecht, P H M and van der Wal, C H}},
  issn         = {{1367-2630}},
  journal      = {{New Journal of Physics}},
  number       = {{11}},
  publisher    = {{IOP Publishing}},
  title        = {{{Optical probing of spin dynamics of two-dimensional and bulk electrons in a GaAs/AlGaAs heterojunction system}}},
  doi          = {{10.1088/1367-2630/12/11/113040}},
  volume       = {{12}},
  year         = {{2010}},
}

@inproceedings{808,
  author       = {{Andree, Matthias and Gebel, Alexander and Karl, Holger}},
  booktitle    = {{10th IEEE International Conference on Computer and Information Technology, CIT 2010, Bradford, West Yorkshire, UK, June 29-July 1, 2010}},
  pages        = {{737----742}},
  title        = {{{Concept and Prototype for a Real-Time Enabled Publish/Subscribe System}}},
  doi          = {{10.1109/CIT.2010.142}},
  year         = {{2010}},
}

@inproceedings{810,
  author       = {{S. Lichte, Hermann and Frey, Hannes and Karl, Holger}},
  booktitle    = {{Proceedings of the 11th ACM Interational Symposium on Mobile Ad Hoc Networking and Computing, MobiHoc 2010, Chicago, IL, USA, September 20-24, 2010}},
  pages        = {{101----110}},
  title        = {{{Fading-resistant low-latency broadcasts in wireless multihop networks: the probabilistic cooperation diversity approach}}},
  doi          = {{10.1145/1860093.1860108}},
  year         = {{2010}},
}

@inproceedings{811,
  author       = {{Biermann, Thorsten and Dannewitz, Christian and Karl, Holger}},
  booktitle    = {{Testbeds and Research Infrastructures. Development of Networks and Communities - 6th International ICST Conference, TridentCom 2010, Berlin, Germany, May 18-20, 2010, Revised Selected Papers}},
  pages        = {{442----453}},
  title        = {{{FIT: Future Internet Toolbox}}},
  doi          = {{10.1007/978-3-642-17851-1_34}},
  year         = {{2010}},
}

@inproceedings{812,
  author       = {{Dannewitz, Christian and Biermann, Thorsten and Dräxler, Martin and Beister, Frederic and Karl, Holger}},
  booktitle    = {{Testbeds and Research Infrastructures. Development of Networks and Communities - 6th International ICST Conference, TridentCom 2010, Berlin, Germany, May 18-20, 2010, Revised Selected Papers}},
  pages        = {{609----611}},
  title        = {{{Prototyping with the Future Internet Toolbox}}},
  doi          = {{10.1007/978-3-642-17851-1_56}},
  year         = {{2010}},
}

@inbook{6154,
  author       = {{Schwens, C and Steinmetz, Holger and Kabst, Rüdiger}},
  booktitle    = {{Innovation and International Corporate Growth}},
  editor       = {{Gerybadze, A and Hommel, U and Reiner, H W and Thomaschweski, D}},
  publisher    = {{Springer}},
  title        = {{{Growth and Internationalization of Renewable Energy and New Technology-Based Firms}}},
  year         = {{2010}},
}

@article{4549,
  abstract     = {{Damage caused by laser irradiation on the surface of ZnTe epilayers was studied by micro-Raman and atomic force microscopy (AFM). ZnTe LO-phonon overtones up to four order and TO + (n − 1)LO zone-center phonons were observed in the resonant micro-Raman spectra at room temperature. Discrepancies in the literature regarding the origin of two features observed at low frequencies around 120 and 140 cm−1 in the Raman spectrum of ZnTe are discussed and resolved. These Raman peaks were not detected by using a low excitation laser power density on a Zn-terminated ZnTe surface; however, with the increase of the laser power density they were found to arise irreversibly. The correspondence of these peaks in a wave number with the strongest Raman peaks of the crystalline tellurium phase and the intensity enhancement behavior with the laser power in a similar way as for CdTe strongly suggests the formation of crystalline tellurium aggregates on the layer surface due to laser irradiation damage. AFM data reveal the occurrence of laser ablation on the ZnTe surface even though the surface temperature of the sample is below the melting point.}},
  author       = {{Larramendi, E M and Berth, Gerhard and Wiedemeier, V and Hüsch, K-P and Zrenner, Artur and Woggon, U and Tschumak, E and Lischka, K and Schikora, D}},
  issn         = {{0268-1242}},
  journal      = {{Semiconductor Science and Technology}},
  number       = {{7}},
  publisher    = {{IOP Publishing}},
  title        = {{{Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers}}},
  doi          = {{10.1088/0268-1242/25/7/075003}},
  volume       = {{25}},
  year         = {{2010}},
}

@article{4550,
  abstract     = {{We have integrated individual (In,Ga)As quantum dots (QDs) using site-controlled molecular beam epitaxial growth into the intrinsic region of a p-i-n junction diode. This is achieved using an in situ combination of focused ion beam prepatterning, annealing, and overgrowth, resulting in arrays of individually electrically addressable (In,Ga)As QDs with full control on the lateral position. Using microelectroluminescence spectroscopy we demonstrate that these QDs have the same optical quality as optically pumped Stranski–Krastanov QDs with random nucleation located in proximity to a doped interface. The results suggest that this technique is scalable and highly interesting for different applications in quantum devices.}},
  author       = {{Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos, S. and Zrenner, Artur and Meier, Cedrik}},
  issn         = {{0003-6951}},
  journal      = {{Applied Physics Letters}},
  number       = {{14}},
  publisher    = {{AIP Publishing}},
  title        = {{{An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode}}},
  doi          = {{10.1063/1.3488812}},
  volume       = {{97}},
  year         = {{2010}},
}

@article{4551,
  abstract     = {{An intentional positioning of optically active quantum dots using site-selective growth by a combination of molecular beam epitaxy (MBE) and focused ion beam (FIB) implantation in an all-ultra-high-vacuum (UHV) setup has been successfully demonstrated. A square array of periodic holes on GaAs substrate was fabricated with FIB of 30 keV ions followed by an in situ annealing step. Subsequently, the patterned holes were overgrown with an optimized amount of InAs in order to achieve site-selective growth of the QDs on the patterned holes. Under well-optimized conditions, a selectivity of single quantum dot growth in the patterned holes of 52% was achieved. Thereafter, carrier injection and subsequent radiative recombination from the positioned InAs/GaAs self-assembled QDs was investigated by embedding the QDs in the intrinsic part of a GaAs-based p–i–n junction device. Electroluminescence spectra taken at 77 K show interband transitions up to the fifth excited state from the QDs.}},
  author       = {{Mehta, Minisha and Reuter, Dirk and Melnikov, Alexander and Wieck, Andreas D. and Michaelis de Vasconcellos, Steffen and Baumgarten, Tim and Zrenner, Artur and Meier, Cedrik}},
  issn         = {{1386-9477}},
  journal      = {{Physica E: Low-dimensional Systems and Nanostructures}},
  keywords     = {{Molecular beam epitaxy, Focused ion beam, Self-assembled quantum dot, Electroluminescence}},
  number       = {{10}},
  pages        = {{2749--2752}},
  publisher    = {{Elsevier BV}},
  title        = {{{Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode}}},
  doi          = {{10.1016/j.physe.2009.12.053}},
  volume       = {{42}},
  year         = {{2010}},
}

@article{9750,
  author       = {{Hess, D. and Hüfner, Thorsten and Hesse, Tobias and Sondermann-Wölke, Christoph and Sattel, Thomas}},
  journal      = {{Internationales Mechatronik-Kolloquium "Mechatronik 2010"}},
  title        = {{{Intelligente mechatronische Systeme zur automatisierten Fahrzeugführung in Fahrerassistenzsystemen}}},
  year         = {{2010}},
}

@article{9758,
  abstract     = {{As a lead-free piezoelectric ceramics, (K,Na)NbO$_{3}$ is a promising material because of its good piezoelectric properties. In this study, (K$_{1-x}$Na$_{x}$)NbO$_{3}$ ceramics were synthesized from a KNbO$_{3}$ and NaNbO$_{3}$ mixture powder prepared by the hydrothermal reaction. The hydrothermal reaction enables the production of high quality powder for the ceramics fabrication process. To obtain (K$_{1-x}$Na$_{x}$)NbO$_{3}$ ceramics, these two powders KNbO$_{3}$ and NaNbO$_{3}$ were mixed and then sintered together. X-Ray diffraction analysis revealed that the solid solution ceramics (K$_{1-x}$Na$_{x}$)NbO$_{3}$ was produced by the sintering process. The K/Na ratio in (K$_{1-x}$Na$_{x}$)NbO$_{3}$ ceramics was optimized for the best piezoelectric properties. The optimized forms was (K$_{0.48}$Na$_{0.52}$)NbO$_{3}$, which showed the following piezoelectric properties; k$_{33}$=0.56, d$_{33}$=114pC/N. In addition, the ferroelectric properties, P$_{r}$=7.72mC/cm$^{2}$, E$_{c}$=857V/mm, and the Curie temperature T$_{c}$=420$_{o}$C were also measured.}},
  author       = {{Maeda, Takafumi and Takiguchi, Norihito and Morita, Takeshi and Ishikawa, Mutsuo and Hemsel, Tobias}},
  issn         = {{1948-5719}},
  journal      = {{Journal of Korean Physical Society}},
  keywords     = {{Lead-free piezoelectric material, KNN, Hydrothermal method}},
  number       = {{4}},
  pages        = {{924--928}},
  title        = {{{Hydrothermal (K1-xNax)NbO3 Lead-free Piezoelectric Ceramics}}},
  doi          = {{10.3938/jkps.57.924}},
  volume       = {{57}},
  year         = {{2010}},
}

@article{9759,
  abstract     = {{Among various lead-free piezoelectric materials, (K,Na)NbO$_{3}$ is a very promising candidate. In this study, (K,Na)NbO$_{3}$ ceramics were sintered from mixed (K,Na)NbO$_{3}$ and NaNbO$_{3}$ powders prepared by hydrothermal reaction. These two powders were mixed with distilled water in a KNbO$_{3}$/NaNbO$_{3}$ molar ratio of 1. After sintering the mixed powder, the solid solution of (Na,K)NbO$_{3}$ ceramics was obtained. The electrical properties such as the electromechanical coupling factors k$_{p}$ and k$_{33}$, the mechanical quality factor, Q$_{m}$, and the piezoelectric constant d$_{33}$ of the sintered (K,Na)NbO$_{3}$ ceramics were 0.32, 0.48, 71 (radial mode), 118 ((33)mode), and 107 pC/N, respectively.}},
  author       = {{Maeda, Takafumi and Takiguchi, Norihito and Morita, Takeshi and Ishikawa, Mutsuo and Hemsel, Tobias}},
  issn         = {{1948-5719}},
  journal      = {{Materials Letters}},
  keywords     = {{Lead-free piezoelectric material, (K, Na)NbO$_{3}$ ceramics, Sintering solid solution, Piezoelectric properties}},
  number       = {{2}},
  pages        = {{125--128}},
  title        = {{{(K,Na)NbO3 lead-free piezoelectric ceramics synthesized from hydrothermal powders}}},
  doi          = {{10.1016/j.matlet.2009.10.012}},
  volume       = {{64}},
  year         = {{2010}},
}

@article{4153,
  abstract     = {{Nanosphere lithography (NSL) masks consisting of mono- or double-layers of polystyrene (PS) nano-beads are fabricated on silicon exploiting the self-organization of PS particles during the controlled drying of a colloidal suspension on a surface. The shape changes and shrinkage of PS sphere masks upon treatment in an air plasma are studied as a function of initial sphere size, plasma power and treatment time. The influence of several experimental parameters, including the plasma induced temperature rise, are analysed using scanning and transmission electron microscopy. It is demonstrated that a variety of new intriguing nanopatterns can be generated on silicon surfaces by the combination of NSL and plasma techniques, largely broadening the variety of patterns available so far by NSL.}},
  author       = {{Gogel, D. and Weinl, M. and Lindner, Jörg and Stritzker, B.}},
  journal      = {{JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS}},
  number       = {{3}},
  pages        = {{740--744}},
  title        = {{{Plasma modification of nanosphere lithography masks made of polystyrene beads}}},
  volume       = {{12}},
  year         = {{2010}},
}

@article{4200,
  abstract     = {{We studied the Fulde-Ferrell-Larkin-Ovchinnikov-type state established due to the proximity effect in superconducting
Nb/Cu_41Ni_59 bilayers. Using a special wedge-type deposition technique, series of 20–35
samples could be fabricated by magnetron sputtering during one run. The layer thickness of only a few
nanometers, the composition of the alloy, and the quality of interfaces were controlled by Rutherford backscattering
spectrometry, high-resolution transmission electron microscopy, and Auger spectroscopy. The magnetic
properties of the ferromagnetic alloy layer were characterized with superconducting quantum interference
device magnetometry. These studies yield precise information about the thickness and demonstrate the homogeneity
of the alloy composition and magnetic properties along the sample series. The dependencies of the
critical temperature on the Nb and Cu41Ni59 layer thickness, T_c(d_S) and T_c(d_F), were investigated for constant
thickness d_F of the magnetic alloy layer and d_S of the superconducting layer, respectively. All types of
nonmonotonic behaviors of T_c versus d_F predicted by the theory could be realized experimentally, from
reentrant superconducting behavior with a broad extinction region to a slight suppression of superconductivity
with a shallow minimum. Even a double extinction of superconductivity was observed, giving evidence for the
multiple reentrant behavior predicted by theory. All critical temperature curves were fitted with suitable sets of
parameters. Then, T_c(d_F) diagrams of a hypothetical ferromagnet/superconductor/ferromagnet spin-switch core
structure were calculated using these parameters. Finally, superconducting spin-switch fabrication issues are
discussed in detail in view of the achieved results.}},
  author       = {{Zdravkov, V. I. and Kehrle, J. and Obermeier, G. and Gsell, S. and Schreck, M. and Müller, C. and Krug von Nidda, H.-A. and Lindner, Jörg and Moosburger-Will, J. and Nold, E. and Morari, R. and Ryazanov, V. V. and Sidorenko, A. S. and Horn, S. and Tidecks, R. and Tagirov, L. R.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{5}},
  publisher    = {{American Physical Society (APS)}},
  title        = {{{Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers}}},
  doi          = {{10.1103/physrevb.82.054517}},
  volume       = {{82}},
  year         = {{2010}},
}

@article{4202,
  abstract     = {{Unintentional doping in nonpolar a-plane 
112¯0 gallium nitride 
GaN grown on r-plane 
11¯02
sapphire using a three-dimensional 
3D–two-dimensional 
2D growth method has been
characterized. For both 2D only and 3D–2D growth, the presence of an unintentionally doped region
adjacent to the GaN/sapphire interface is observed by scanning capacitance microscopy 
SCM. The
average width of this unintentionally doped layer is found to increase with increasing 3D growth
time. By using an intentionally doped GaN:Si staircase structure for calibration, it is shown that the
unintentionally doped region has an average carrier concentration of 
2.5
0.31018 cm−3. SCM
also reveals the presence of unintentionally doped features extending at 60° from the GaN/sapphire
interface. The observation of decreasing carrier concentration with distance from the GaN/sapphire
interface along these features may suggest that the unintentional doping arises from oxygen
diffusion from the sapphire substrate. Low temperature cathodoluminescence spectra reveal
emission peaks at 3.41 and 3.30 eV, which are believed to originate from basal plane stacking faults

BSFs and prismatic stacking faults 
PSFs, respectively. It is shown that the inclined features
extending from the GaN/sapphire interface exhibit both enhanced BSF and PSF emission. We
suggest that enhanced unintentional doping occurs in regions around PSFs. Where BSFs intersect
this doped material their emission is also enhanced due to reduced nonradiative recombination.
Transmission electron microscopy confirms the presence of PSFs extending through the film at 60°
from the GaN/sapphire interface.}},
  author       = {{Zhu, Tongtong and Johnston, Carol F. and Häberlen, Maik and Kappers, Menno J. and Oliver, Rachel A.}},
  issn         = {{0021-8979}},
  journal      = {{Journal of Applied Physics}},
  number       = {{2}},
  publisher    = {{AIP Publishing}},
  title        = {{{Characterization of unintentional doping in nonpolar GaN}}},
  doi          = {{10.1063/1.3284944}},
  volume       = {{107}},
  year         = {{2010}},
}

@book{4207,
  editor       = {{Ila, D. and Kishimoto, N.  and Lindner, Jörg and Baglin, J.}},
  isbn         = {{978-1-60511-154-4}},
  location     = {{San Francisco (USA)}},
  publisher    = {{MRS Symposium Proceedings }},
  title        = {{{Ion Beams and Nano-Engineering}}},
  volume       = {{1181}},
  year         = {{2010}},
}